• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.145-156
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• 1997

ZrO2 phase transformations depending on the type and amount of dopants and the sintering temperatures were studied for the 2 components (CaO-, Y2O3-, MgO-ZrO2) and the 3 components(MgO-ZrO2-Al2O3)ZrO2 powder by X-ray diffraction and Raman spectroscopy. In the CaO- and Y2O3-ZrO2 systems, as the CaO and Y2O3 contents increased to 6~15mol% and 3~15mol% respectively, we were not able to identify between tetragonal and cubic in the X-ray diffraction patterns. On the other hand, all Raman modes shifted to lower wavenumbers, decreasing in intensity and the number of bands, markedly. These phenomena were caused by tetragonallongrightarrowcubic phase transformation and interpreted by the breakdown of the wave vector selection rule(k=0) and the structural disorder associated with the formation of oxygen sublattice which was caused by the substitution between Zr4+ ion and Ca2+ or Y3+ ion in ZrO2 matrix. The monoclinic to cubic phase transformation occurred in 10mol% MgO-ZrO2 system. As the Al2O3 content increased from 0 to 20mol% in the MgO-ZrO2-Al2O3 systems, cubic phase transformed to monoclinic phase, this is because the MgO didn't play a role in a stabilizer because of the formation of the spinel(MgAl2O4) by the reaction between MgO and Al2O3, Also, the ZrO2 phase transformation was explained by the change of it's lattice parameters depending on the type and amount of dopants. Namely, as the amount of dopant increased to 10~13mol%, the axial ra-tio c/a came close to unity with increasing the lattice parameter a and decreasing the lattice parameter c. At that time, the tetragonallongrightarrowcubic phase transformation occurred.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.214-218
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• 1998

RF-PECVD로 합성된 a-C : H 박막의 내부압축응력 발생 원인을 규명하기 위하여 mesh에 RF power를 인가하는 새로운 장치를 고안, 기판지지대에 RF power를 인가하는 기존의 장치에서 합성된 시편과의 비교.분석을 수행하였다. Raman 분광 분석과 내부압축응력 측정 결과로부터 mesh 장치에 의해 합성되어진 시편의 $sp^{3}$$sp^{2}$비가 감소함에 따라 내부압축응력이 감소하는 것을 관찰할 수 있었으며, 또한 미세경도와 밀착강도를 측정하였다. 그리고 내부합축응력 발생에 대한 이온충돌효과를 확인하기 위해서 Ar보조가스를 첨가하였다. 그 결과 입자의 peening 효과에 의한 내부압축응력의 발생을 확인할 수 있었다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.141-141
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• 2004

다이아몬드상 탄소(diamond-like carbon, DLC) 박막은 명칭에 함축된 의미로 알 수 있듯이 다이아몬드와 유사한 특징을 지니고 있다. DLC 박막은 비정질(amorphous) 고상 탄소 박막으로 구조적으로 Sp$^1$, Sp$^2$, Sp$^3$의 결합들로 구성되어 있다. DLC 박막의 물성으로는 우수한 경도, 내마모성, 낮은 마찰계수, 화학적 안정성 그리고 적외선(IR) 영역에서의 높은 투과율 등이 있다. 현재 DLC 박막은 앞서 열거된 물성들의 장점을 활용하여 다양한 산업분야에서 활발히 응용되고 있다.(중략)

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1070-1076
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• 1997

DLC(diamond-like carbon)박막을 RF PCVD법으로 증착하여 일반적인 증착특성과 마찰.마모특성사이의 관계를 알아보기 위해, 증착속도, 박막경도, 내무압축응력 및 박막내의 수소량 측정을 통해 일반적인 증착특성을 조사하였다. 그리고 증착된 박막의 C-H 결합구조와 물질특성 분성을 위해 각각 FTIR 및 Raman분광분석을 행하였다. 박막의 마찰계수와 내마모특성은 Pin-on-disk형 마찰시험기를 이용하여 상기의 증착조건과의 상관관계를 조사하였다. DC self-bais, 즉 충돌에너지가 커지면 박막의 증착속도와 경도는 대체로 증가하고, 박막내의 압축응력은 최대값을 가지다가 다시 감소됨을 알 수 있언ㅆ다. 또한 박막내의 수소량은 급격히 감소하다가 포화됨을 알 수 있었다. 얻어진 박막의 마찰계수는 최소 0.08로 분위기가 dry일 때 더 작으며 내마모성은 이온의 충돌에너지와 밀접한 관계를 가지며 모재인 Si-wafer보다 훨씬 큼을 알수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.175-175
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• 2013

염료감응형 태양전지(Dye Sensitized Solar Cells; DSSC)에서 투명전극(Transparent Conducting Oxide; TCO)으로 사용되는 ITO, FTO의 경우 자원의 희소성과 고온에 취약하며 취성과 같은 단점 등이 있다. Graphene은 단원자층의 얇은 물질로써 우수한 전도도와 투과도, 고강도와 고탄성의 특성들을 가진다. 이러한 특성들을 가지는 Graphene을 기존의 투명전극을 대체하여 DSSC의 작업전극에 적용 하였다. 본 실험에서 사용된 그래핀 시트는 근적외선을 source로 하는 RTA (Rapid Thermal Annealing)장비에 탄화수소 기반의 gas를 주입하여 Ni위에 성장시켰으며, 습식방법인 용액Etching 방식을 사용하여 유리판 위에 전사시켰다. 전사된 Graphene 투명전극의 전기적 특성과 광학적 특성을 평가하기 위해 4 point probe, FT-IR, 마이크로 Raman분광법, 광학현미경 및 투과도를 측정하여 평가 하였다. 전사된 Graphene 투명전극을 염료감응형 태양전지 작업전극에 적용하여, DSSC소자를 제작하고, Solar Simulator로 광전변환효율 및 EIS(Electrochemical Impedance Spectroscopy)를 측정하여 기존의 FTO로 만든 DSSC와 비교하였다.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.566-573
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• 1994

The diamond synthesis by combustion flame method is considerably affected by the substrate surface temperature and its distribution which are mainly controlled by the ratio of mixed gas, $O_2/C_2H_2$. In order to elucidate the role of gas ratio in the diamond synthetic process by combustion flame, under various gas ratios (R=0.87~0.98; R=ratio of flow-rate of $O_2/C_2H_2$ gas) the substrate temperature was measured by using thermal video system and the morphological change of diamond crystals was analysed by using SEM, Raman spectroscope, and X-ray diffraction method. With increasing the gas ratio, i.e., decreasing the hydrocarbon content, the nucleation rate of diamond crystal was lowerd. It was also found that the morphology of diamond crystals changed from the cubo-octahedron type consisting of (100), (111) plane to the octahedron type of (111) plane. The increase of the substrate temperature consistently resulted in the increase of the nucleation rate as well as the growth rate of diamond crystals in which the surface of diamond crystal dominantly consisting of (100) plane.

• Analytical Science and Technology
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• v.37 no.3
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• pp.174-188
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• 2024

This review summarized research trends regarding sample collection methods, pretreatment method, and types of analysis devices for microplastics (MPs) in soil and groundwater matrices. Soil sampling considers the selection of sampling location, depth, and volume. The typically sampling depth is within 15 cm (topsoil), and about 1 kg of mixed each sample. Among spot sampling and continuous flow sampling, groundwater sampling mainly used a continuous flow sampling, with collection rates 2 to 6 L/min in the range of 300~1,000 L, and followed by immediate on-situ filtration. Pretreatment method, applied to soil and groundwater, consist of organic digestion and density separation. In the organic digestion method, H₂O₂ is recommended among H₂O₂, acidic, alkaline, and enzymatic method. NaCl is primarily used as a reagent in density separation. However, depending on the density of MPs, other regents can be selectively used like ZnCl₂, ZnBr₂, and etc. Representative analysis device includes Fourier Transform Infrared (FTIR) and Raman spectroscopy for non-destructive analysis and Pyrolysis Gas Chromatography Mass Spectrometry (Py-GC/MS) for destructive analysis. µ-FTIR and Raman can count MPs of larger than 10 and 1 ㎛, and analyze MPs materials. However, it is need to sufficiently remove interference, like organic matter, in spectroscopic analysis using essential pretreatment method. Py-GC/MS is being continuously researched because it doesn't require complex pretreatment method and allows quantitative analysis of specific materials.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.44 no.1
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• pp.64-70
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• 2007

Raman spectroscopy is known to have strong potential for providing noninvasive dermatological diagnosis of skin cancer. According to the previous work, various well known methods including maximum a posteriori probability (MAP) and multilayer perceptron networks (MLP) showed competitive results. Since even the small errors often leads to a fatal result, we investigated the method that reduces classification error perfectly by screening out some ambiguous patterns. Those ambiguous patterns can be examined by routine biopsy. We incorporated an ambiguous pattern class in MAP, linear classifier using minimum squared error (MSE), MLP and reduced coulomb energy networks (RCE). The experiments involving 216 confocal Raman spectra showed that every methods could perfectly classify BCC by screening out some ambiguous patterns. The best results were obtained with MSE. According to the experimental results, MSE gives perfect classification by screening out 8.8% of test patterns.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.