• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of IKEEE
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• v.19 no.2
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• Journal of IKEEE
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• v.17 no.2
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• Journal of the Korean Society for Railway
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• v.16 no.4
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• pp.272-277
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• 2013

Power quality is a term that is now extensively used in power systems applications, and in this context the voltage, current, and phase angle are discussed widely. In particular, different algorithms that are capable of detecting the voltage sag and swell information in a real time environment have been proposed and developed. Voltage sag and swell play an important role in determining the stability, quality, and operation of a power system. This paper presents ANFIS (Adaptive Network based Fuzzy Inference System) models with different membership functions to build the voltage shape with the knowledge of known system parameters, and detect voltage sag and swell accurately. The performance of each method has been compared with each other/other methods to determine the effectiveness of the different models, and the results are presented.

• Journal of Korean Society on Water Environment
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• v.26 no.4
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• pp.681-686
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• 2010

Two different MFC designs were evaluated in batch mode: single compartment combined membrane-electrodes (SCME) design and twin-compartment brush-type anode electrodes (TBE) design (single chamber with two air cathodes and brush anodes at each side of the reactor). In SCME MFC, carbon anode and cathode electrodes were assembled with a proton exchange membrane (PEM). TBE MFC was consisted of brush-type anode and carbon cloth cathode electrodes without the PEM. A brush-type anode was fabricated with carbon fibers and was placed close to the cathode electrode to reduce the internal resistance. Substrates used in this study were glucose, leachate from cattle manure, or sucrose at different concentrations with phosphate buffer solution (PBS) of 200 mM to increase the conductivity thereby reduce the internal resistance. Hydrogen generating bacteria (HGB) were only inoculated in TBE MFC. The peak power densities ($P_{peak}$) produced from the SCME systems fed with glucose and leachate were 18.8 and $28.7mW/m^2$ at external loads of 1000 ohms, respectively. And the $P_{peak}$ produced from TBE MFC were 40.1 and $18.3mW/m^2$ at sucrose concentration of 5 g/L and external loads of 470 ohms, with a mediator (2-hydroxy-1, 4-naphthoquinone) and without the mediator, respectively. The maximum power density ($P_{max}$) produced from mediator present TBE MFC was $115.3mW/m^2$ at 47 ohms of an external resistor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.6
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• pp.455-460
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• 2020

The governments of Korea, China, and Japan have operated comprehensive research institutes for railway technologies. Korea Railroad Research Institute (KRRI), China Academy of Railway Sciences Corporation Limited (CARS), and Railway Technical Research Institute (RTRI) are representatives of comprehensive railway research institutes in each country. KRRI was found to be the most advanced in the quantitative competitiveness of patents. In terms of qualitative competitiveness, KRRI has strength in civil engineering, whereas RTRI has strength in electricity. KRRI was found to have the greatest efforts in securing competitiveness in overseas property rights. By comparing the publication of papers, CARS published the most papers. On the other hand, from 2015, KRRI showed an upward trend and published the most papers. By examining the impact of the papers by the citation, KRRI was found to have higher competitiveness than the other two institutions. In the future, it will be necessary to perform big data analysis on patents and papers of the three organizations, derive the key research areas and promising technology areas for each institute, and establish a mid-to-long-term development plan for railway technology based on scientific evidence.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.11
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• pp.1-9
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• 2016

Train control systems have changed from wayside electricity-centric to onboard communications-centric. The latest train control system, the CBTC system, has high efficiency for interval control based on two-way radio communications between the onboard and wayside systems. However, since the wayside system is the center of control, the number of input trains to allow a wayside system is limited, and due to the cyclic-path control flows between onboard and wayside systems, headway improvement is limited. In this paper, we propose a train interval-control and train-centric distributed interlocking algorithm for an autonomous train-driving control system. Because an autonomous train-driving control system performs interval and branch control onboard, both tracks and switches are shared resources as well as semaphore elements. The proposed autonomous train-driving control performs train interval control via direct communication between trains or between trains and track-side apparatus, instead of relying on control commands from ground control systems. The proposed interlocking algorithm newly defines the semaphore scheme using a unique key for the shared resource, and a switch that is not accessed at the same time by the interlocking system within each train. The simulated results show the proposed autonomous train-driving control system improves interval control performance, and safe train control is possible with a simplified interlocking algorithm by comparing the proposed train-centric distributed interlocking algorithm and various types of interlock logic performed in existing interlocking systems.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.7
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• pp.756-759
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• 2014

DC/DC converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. The converters can be applied in the regenerative braking of DC motors to return energy back to the supply, resulting in energy savings for the systems at periodic intervals. The fundamental converter studied here consists of an IGBT (Insulated Gate Bipolar mode Transistor), an inductor, a capacitor, a diode, a PWM-IC (Pulse Width Modulation Integrated Circuit) controller with oscillator, amplifier, and comparator. The PWM-IC is a core element and delivers the switching waveform to the gate of the IGBT in a stable manner. Display of the DC/DC converter output depends on the IGBT's changes in the threshold voltage and PWM-IC's pulse width. The simulation was conducted by PSIM software, and the hardware of the DC/DC converter was also implemented. It is necessary to study the fact that the output voltage depends on the duty rate of D, and to compare the output of experimental result with the theory and the simulation.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.1-6
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• 2009

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.