• ETRI Journal
• /
• 제37권5호
• /
• pp.951-960
• /
• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• 전기전자학회논문지
• /
• 제19권2호
• /
• pp.232-236
• /
• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

• 전기전자학회논문지
• /
• 제17권2호
• /
• pp.129-134
• /
• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• 한국철도학회논문집
• /
• 제16권4호
• /
• pp.272-277
• /
• 2013

Power quality is a term that is now extensively used in power systems applications, and in this context the voltage, current, and phase angle are discussed widely. In particular, different algorithms that are capable of detecting the voltage sag and swell information in a real time environment have been proposed and developed. Voltage sag and swell play an important role in determining the stability, quality, and operation of a power system. This paper presents ANFIS (Adaptive Network based Fuzzy Inference System) models with different membership functions to build the voltage shape with the knowledge of known system parameters, and detect voltage sag and swell accurately. The performance of each method has been compared with each other/other methods to determine the effectiveness of the different models, and the results are presented.

• 한국물환경학회지
• /
• 제26권4호
• /
• pp.681-686
• /
• 2010

Two different MFC designs were evaluated in batch mode: single compartment combined membrane-electrodes (SCME) design and twin-compartment brush-type anode electrodes (TBE) design (single chamber with two air cathodes and brush anodes at each side of the reactor). In SCME MFC, carbon anode and cathode electrodes were assembled with a proton exchange membrane (PEM). TBE MFC was consisted of brush-type anode and carbon cloth cathode electrodes without the PEM. A brush-type anode was fabricated with carbon fibers and was placed close to the cathode electrode to reduce the internal resistance. Substrates used in this study were glucose, leachate from cattle manure, or sucrose at different concentrations with phosphate buffer solution (PBS) of 200 mM to increase the conductivity thereby reduce the internal resistance. Hydrogen generating bacteria (HGB) were only inoculated in TBE MFC. The peak power densities ($P_{peak}$) produced from the SCME systems fed with glucose and leachate were 18.8 and $28.7mW/m^2$ at external loads of 1000 ohms, respectively. And the $P_{peak}$ produced from TBE MFC were 40.1 and $18.3mW/m^2$ at sucrose concentration of 5 g/L and external loads of 470 ohms, with a mediator (2-hydroxy-1, 4-naphthoquinone) and without the mediator, respectively. The maximum power density ($P_{max}$) produced from mediator present TBE MFC was $115.3mW/m^2$ at 47 ohms of an external resistor.

• 한국산학기술학회논문지
• /
• 제21권6호
• /
• pp.455-460
• /
• 2020

한국, 중국, 일본 정부는 철도에 대한 종합연구기관을 설립하여 운영하고 있다. 한국철도기술연구원, 중국철도과학연구원, 일본철도종합기술연구소는 각 국가의 대표적인 철도종합연구기관으로서, 철도원천기술 및 시스템기술개발에 집중하고 있다. 이 기관들은 특허와 논문 실적을 지속적으로 도출하고 있으며, 특허 및 논문을 통해 각 기관들의 연구성과를 비교 분석할 수 있다. 윈텔립스 DB를 이용하여 2000년 이후 공개특허를 비교한 결과, 특허의 양적 경쟁력에서는 한국철도기술연구원이 1,923건으로 가장 앞서는 것으로 나타났고, 질적 경쟁력에서는 한국철도기술연구원이 토목분야의 특허시장지수가 1.04, 특허영향력지수가 1.33으로 높게 나타났으며 일본철도종합기술연구소가 철도전력분야 특허시장지수가 1.16, 특허영향력지수가 1.32로 높게 나타났다. 세 기관 모두 자국 특허출원 비중이 매우 높게 나타났으나, 한국철도기술연구원이 상대적으로 PCT 출원 108건 등 해외 지식재산권 경쟁력 확보노력을 가장 많이 하는 것으로 나타났다. Scopus DB를 이용하여 논문발표를 비교한 결과, 중국철도과학연구원이 1,527건으로 가장 많은 논문을 발표하였지만, 2015년부터는 한국철도기술연구원이 매년 100건 이상의 논문을 발표하며 가장 많은 실적을 나타냈다. 피인용도를 중심으로 논문영향력을 살펴본 결과, 한국철도기술연구원의 논문영향력지수가 0.45로서 두 기관보다 높은 경쟁력을 갖고 있었다. 향후 세 기관의 특허·논문 정보에 대한 텍스트마이닝 등 빅데이터분석을 활용하여, 기관별 중점연구영역 및 유망기술분야를 도출하고, 과학적 증거에 기반한 철도기술개발 중장기발전계획 등의 수립이 필요할 것으로 판단된다.

• 한국산학기술학회논문지
• /
• 제17권11호
• /
• pp.1-9
• /
• 2016

열차제어시스템은 지상 전기 중심에서 차상 통신 중심으로 변화하고 있다. 최신의 열차제어시스템인 CBTC 시스템은 차상과 지상시스템 간 양방향 무선통신을 기반으로 높은 간격제어 효율을 가진다. 하지만 지상이 제어의 중심이 되고 있기 때문에 하나의 지상시스템이 허용할 수 있는 열차 투입 대수가 제한되고 차상과 지상제어시스템 간 cyclic-path 제어흐름으로 인해 운전시격 단축에 한계를 가진다. 본 논문은 열차자율주행제어시스템을 위한 간격제어와 차상중심 분산형 연동 알고리즘을 제안한다. 열차자율주행제어시스템은 차상에서 간격제어와 함께 분기제어를 수행하므로 선로와 분기기는 공유자원인 동시에 세마포어 요소이다. 제안된 열차자율주행기반 간격제어는 지상 제어시스템의 제어명령에 의존하지 않고 열차와 열차 또는 선로변 설비와의 직접적인 무선통신을 통해 열차 간격제어를 수행한다. 제안된 연동 알고리즘은 공유자원인 선로전환기가 동시에 두 대 이상의 열차가 점유하지 못하도록 선로전환기 고유 key를 이용한 세마포어 기법을 새롭게 정의한다. 시뮬레이션을 통해 제안된 열차자율주행제어시스템의 향상된 간격제어 성능을 확인하며, 차상중심 분산형 연동알고리즘과 기존의 연동장치에서 수행하던 여러 연동논리를 비교함으로써 단순화된 연동알고리즘으로 안전한 열차제어가 가능함을 확인한다.

• 전기전자학회논문지
• /
• 제20권2호
• /
• pp.163-166
• /
• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• 제어로봇시스템학회논문지
• /
• 제20권7호
• /
• pp.756-759
• /
• 2014

DC/DC converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. The converters can be applied in the regenerative braking of DC motors to return energy back to the supply, resulting in energy savings for the systems at periodic intervals. The fundamental converter studied here consists of an IGBT (Insulated Gate Bipolar mode Transistor), an inductor, a capacitor, a diode, a PWM-IC (Pulse Width Modulation Integrated Circuit) controller with oscillator, amplifier, and comparator. The PWM-IC is a core element and delivers the switching waveform to the gate of the IGBT in a stable manner. Display of the DC/DC converter output depends on the IGBT's changes in the threshold voltage and PWM-IC's pulse width. The simulation was conducted by PSIM software, and the hardware of the DC/DC converter was also implemented. It is necessary to study the fact that the output voltage depends on the duty rate of D, and to compare the output of experimental result with the theory and the simulation.

• 전자공학회논문지SC
• /
• 제46권2호
• /
• pp.1-6
• /
• 2009

금속 산화막 반도체 전계효과 트랜지스터(MOSFET)와 트랜지스터(Transistor)와 접합형으로 구성된 절연 게이트 양극성 트랜지스터(IGBT)의 게이트바이어스 상태에서 감마방사선을 조사하면 전기적특성에서 문턱전압과 전류이득의 감소가 발생한다. 저선량과 고선량에서 문턱전압의 이동은 전류의 증감에 따라 변화한다. 본 논문에서 콜렉터전류는 게이트와 에미터간의 전압으로 구동되는데 게이트 바이어스 전압과 조사량에 따라 실험하고 전기적 특성을 분석한다. 그리고 IGBT를 설계하는데 필요한 모델파라미터를 구하고 연구하는데 있다.