• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.9-17
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• 2015

After its inception in 1994, the Journal of the Microelectronics and Packaging Society has continued to make significant strides in the number and quality of publications within its field. The interest in the microelectronics and packaging research has become more critical as consumer electronic products continue its increasing trend towards thinner and lighter devices that tests the boundaries of electronic devices. This study utilizes social network analysis of all published literature in the Journal for the past 22 years. Using the keywords and abstracts available within each individual article, the publications within the Journal has focused on major topics covering (1) flip chip, (2) reliability, (3) Cu, (4) IMC (intermetallic compounds), and (5) thin film. Using the social network relationship between keywords within articles, flip chip was closely associated with reliability, BGA (ball grid array), contact resistance, electromigration in many of the published research works within the Journal. From the centrality analysis, it was found that flip chip, reliability, Cu, thin film, IMC, and RF (radio frequency) to have a high degree of centrality suggesting these key areas of research have relatively high connectivity with other research topics within the Journal and is central to many of the research fields within the micro-electronics and packaging area. The cohesiveness analysis showed research clustering of five major cohesive sub-groups and was mapped to better understand the major area of research within this field. Research within the field of micro-electronics and packaging converges many disciplines of science and engineering. The continued evolution within this field requires an understanding of the rapidly changing industry environment and the consumer needs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.508-517
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• 2014

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1277-1282
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• 2016

In the next generation wireless communication systems, an energy harvesting from radio frequency signals is considered as a method to solve the lack of power supply problem for sensors. In this paper, we try to propose an efficient algorithm for simultaneous wireless information and power transfer in energy harvesting networks with channel estimation error. At first, we find an optimal channel training interval using one-dimensional exhaustive search, and estimate a channel using MMSE channel estimator. Based on the estimated channel, we propose a power allocation and splitting algorithm for maximizing the data rate while guaranteeing the minimum required harvested energy constraint, The simulation results confirm that the proposed algorithm has an insignificant performance degradation less than 10%, compared with the optimal scheme which assumes a perfect channel estimation, but it can improve the data rate by more than 20%, compared to the conventional scheme.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.2
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• pp.545-563
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• 2015

Energy harvesting (EH) and network coding (NC) have emerged as two promising technologies for future wireless networks. In this paper, we combine them together in a single system and then present a time switching-based network coding relaying (TSNCR) protocol for the two-way relay system, where an energy constrained relay harvests energy from the transmitted radio frequency (RF) signals from two sources, and then helps the two-way relay information exchange between the two sources with the consumption of the harvested energy. To evaluate the system performance, we derive an explicit expression of the outage probability for the proposed TSNCR protocol. In order to explore the system performance limit, we formulate an optimization problem to minimize the system outage probability. Since the problem is non-convex and cannot be directly solved, we design a genetic algorithm (GA)-based optimization algorithm for it. Numerical results validate our theoretical analysis and show that in such an EH two-way relay system, if NC is applied, the system outage probability can be greatly decreased. Moreover, it is shown that the relay position greatly affects the system performance of TSNCR, where relatively worse outage performance is achieved when the relay is placed in the middle of the two sources. This is the first time to observe such a phenomena in EH two-way relay systems.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.4
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• pp.10-15
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• 2017

Feedback burden of a full-digital energy beamforming, which is known as the optimal precoding scheme for radio frequency (RF) energy transfer, is huge because it uses a vector quantization for a channel feedback. To reduce the feedback burden, we consider a beam steering based wireless energy transfer, which uses a scalar quantization. Researches related to the beam steering based wireless energy transfer have been studied in special channel model with an assumption of full channel state information at the transmitter. In this paper, we analyze the beam steering scheme compared with the full-digital energy beamforming for practical channel models with channel estimation errors. According to characteristics of the millimeter wave channel, the number of antennas of the base station and the user, the distance between them, and channel estimation errors, we simulate the performance of the beam steering scheme and analyze reasons why.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.321-327
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• 2001

Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.2 s.308
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• pp.28-32
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• 2006

In this paper, NTSC TV Transmitter Modulo will be designed and produced which make possible playing the motion picture not only on TV but also on portable TV. NTSC TV Transmitter Module modulates signals that received Video and Audio signals from a mobile on NTSC TV CH4 mechanism. so it has an advantage of convenience that watching the motion picture of mobile on TV without any other cable through transmitting signals by wireless. But it has some demerits of long size antenna and noise sensitiveness. In the future, if some problems like a size of antenna distortion of signal and noise can be solved through continuous researching about Radio Frequency part, it is possible to play mobile motion pictures on the more media like a camcorder, DVD player and so on.

• International Journal of Oral Biology
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• v.37 no.1
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• pp.9-16
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• 2012

The aim of this study was to evaluate surface characteristics and biological properties of the dentin -derived hydroxyapatite (HA) coating on titanium substrate. Dentinderived HA was obtained from extracted human teeth using a calcination method at $850^{\circ}C$. The commercially pure titanium (cp-Ti, ASTM Grade II) was used as a metallic substrate and a radio frequency magnetron sputtering method was employed as a coating method. Scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX) were utilized to investigate the coating aspects and composition. Atomic forced microscopy (AFM) and a surface profiler were used to assess the surface morphology and roughness. Corrosion tests were performed in phosphate-buffered saline at a $36.5{\pm}1^{\circ}C$ in order to determine the corrosion behavior of the uncoated and coated specimens. The biocompatibility of dentin-derived HA coated specimens with fetal rat calvarial cells and human gingival fibroblasts was assessed by SEM and cell proliferation analysis. The results showed that the dentin-derived HA coatings appeared to cover thinly and homogeneously the surfaces without changing of the titanium substrate. The EDX analysis of this the coating surface indicated the presence of Ca and P elements. The mean surface roughness of cp-Ti and dentin-derived coating specimens was $0.27{\mu}m$ and, $1.7{\mu}m$, respectively. Corrosion tests indicated a stable passive film of the dentin-derived HA coating specimens. SEM observations of fetal rat calvarial cells and human fibroblast cells on coated surfaces showed that the cells proliferated and developed a network of dense interconnections. The cells on all specimens proliferated actively within the culture period, showing good cell viability. At day 1 and 3, dentin-derived coating specimens showed 89% and 93% cell viability, respectively, when normalized to cp-Ti specimens. These results suggest that dentin-derived HA coating using the RF magnetron sputtering method has good surface characteristics and biocompatibility.