• 한국연소학회:학술대회논문집
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• 1999.10a
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• pp.117-128
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• 1999

The removal of nitrogen oxides(NOx) from $N_{2}/O_{2}$ gas using a pulsed corona discharge was investigated as a function of the reduced electric field(E/N) and the energy density(J/L). A kinetic model was developed to characterize the chemical reactions taking place in a pulsed corona discharge reactor. The model calculates the fractional concentrations of radical species at each pulse-on period and utilizes the radicals to remove NOx for the subsequent pulse-off period. Electron collision reaction data are calculated using ELENDIF program to solve Boltzmann equation for electron energy distribution function, and the subsequent chemical reactions are calculated using CHEMKIN-II program to solve stiff ODE(ordinary differential equation) problems for species concentrations. The corona discharge energy per pulse and the time-space averaged E/N were obtained by fitting the model to experimental data. The model calculation shows good agreement with the experimental data, and predicts the formation of other species such as $NO_{2}$, $O_{3}$ and $N_{2}O$.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.895-897
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• 1998

The optical spectra of microwave plasma by four kinds of gases($N_2$, $N_2-CH_4$, $H_{2}-CH_{4}$ and Air-$CH_4$) have been measured for investigating 388.4[nm] peak which has the same intensity as $H_{\alpha}$(656.4[nm]) peak. A 388.4[nm] peak by $N_2$ plasma, $N_{2}-CH_{4}$ plasma and Air-$CH_4$ plasma may be CN peak because it is with 337.1, 357.8 and 316.0[nm] peaks by $N_2$. And a 388.4[nm] peak by $H_{2}-CH_{4}$ plasma without by $N_2$ 337.1, 357.8 and 316.0[nm] peaks may be CH peak. In the investigation results for optical spectra by $H_{2}-CH_{4}$ plasma and $H_{2}-CH_{4}-O_{2}$ plasma, the density of hydrogen atom was increased because oxygen decompose hydrogen molecules in $H_{2}-CH_{4}$ plasma with oxygen. These hydrogen atom decompose $CH_4$ and increase CH radical. And the crystalline of deposited diamond was good and the growth rate increased.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.483-488
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• 2006

Etching process of PMMA (Polymethyl Methacrylate) on glass surface was investigated by dry etching technique using remote plasma. To determine the etching characteristics, the remote plasma etching was conducted for various process parameters such as plasma power, reaction gas and distance from plasma generation. As the distance from the plasma generation was increased, the etch rate of PMMA was linearly decreased by radical density in plasma. PMMA has removed by reactive radicals in the plasma. The etch rate increased with plasma power because of more reactive radicals. The etch rate and surface roughness of PMMA increased with $O_2$ concentration in the etchant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.354-357
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• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• The Korean Journal of Food And Nutrition
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• v.31 no.4
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• pp.478-484
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• 2018

This study evaluated the quality characteristics of rice cookies prepared with different amounts (0%, 5%, 10%, and 15%) of hempseed powder. The values of density and pH in the cookies did not significantly differ among the groups. The moisture content ranged from 4.86% to 5.83% and was the highest in control groups. The spread factor increased with increasing hempseed powder concentration. The lightness value decreased with increasing amounts of hempseed powder, while the redness and yellowness values did not differ among groups. The incorporation of hempseed in cookies increased cookie hardness. A consumer acceptance test revealed that cookies with hempseed powder added were more preferable than those of the control groups in terms of overall acceptability. The total polyphenol content of the control groups was 7.15 mg GAE/100 g, while that of the hempseed added groups ranged from 12.36 to 17.17 mg GAE/100 g. The substitution of wheat flour for hempseed powder yielded rice cookies with a higher DPPH (2,2-diphenyl-1-picrylhydrazyl) radical scavenging activity. The above results indicate that the most desirable cookies were those prepared with the addition of 15% hempseed powder.

• Journal of Environmental Science International
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• v.18 no.4
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• pp.445-450
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• 2009

In this study, the fundamental experiments were performed for catalytic oxidation of NO (50 ppm) on $MnO_2$ in the presence of ozone. The experiments were carried out at various catalytic temperatures ($30-120^{\circ}C$) and ozone concentrations (50-150 ppm) to investigate the behavior of NO oxidation. The honeycomb type $MnO_2$ catalyst was rectangular with a cell density of 300 cells per square inch. Due to $O_3$ injection, NO reacted with $O_3$ to form $NO_2$, which was adsorbed at the $MnO_2$ surface. The excessive ozone was decomposed to $O^*$ onto the $MnO_2$ catalyst bed, and then that $O^*$ was reacted with $NO_2$ to form $NO_3^-$. It was found that the optimal $O_3$/NO ratio for catalytic oxidation of NO on $MnO_2$ was 2.0, and the NO removal efficiency on $MnO_2$ was 83% at $30^{\circ}C$. As a result, NO was converted mainly to $NO_3^-$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.65-65
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• 2009

본 연구에서는 ICP 식각장치 및 $Cl_2$/Ar 플라즈마에 의한 $Ba_2Ti_9O_{20}$(BTO) 박막의 식각 특성을 고찰하였다. XPS 분석 장치를 이용하여 식각 표면 반응을 조사하였으며, 공정 변수 ($Cl_2$/Ar 가스 혼합비, 소스파워, 챔버 압력, 바이어스 파워)에 따라 플라즈마 특성 변화를 Langmuir probe measuring system을 이용하여 추출하였다. $Cl_2$/Ar 가스에서 Ar 가스의 혼합비가 증가함에 따라 BTO 박막의 식각 속도는 감소하였으며, $Cl_2$ 가스만을 사용하는 경우, 31.7 nm/min 으로 가장 높은 식각 속도를 보였다. Ar 가스의 혼합비에 따른 BTO박막의 식각속도 변화는 Langmuir probe 특성과 XPS 분석결과로부터 플라즈마 내에 형성되는 Cl radical density와 밀접한 관련이 있는 것으로 판단할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.57-57
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• 2009

In this work, we carried out the variation of surface characteristics of organic polymer films by O2 plasma. The plasma diagnostics were performed by DLP(Double Langmuir Probe) and OES(Optical Emission Spectroscopy) measurements. Moreover, variation of surface characteristics were measured by AFM(Atomic Force Microscope), XPS(X-ray Photoelectron Spectroscopy), and contact angle goniometer. It was found that the etch rate of organic films was controlled by O radicals flux and dc bias voltage. And O radical density and dc bias voltage increased with increasing bias power. So, it was changed surface energy as a function of surface roughness and O/C ratio in organic films.

• Journal of the Korean Applied Science and Technology
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• v.37 no.5
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• pp.1100-1105
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• 2020

We investigated the driving force and the required charges for spontaneous reduction of metal nanoparticles (NPs) on a scotch tape induced by mechanochemical activation. The charges were analyzed based on anodic stripping voltammetry (ASV) of silver, which is proportional to the number of charge identities on the tape. The results supported that the driving force is mechanochemical radicals rather than ions in the light of the high charge density on the tape.

• Mycobiology
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• v.36 no.4
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• pp.260-265
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• 2008

Cyclic voltammetric measurements were performed for Co(II), Ni(II), Cu(II) and Zn(II) complexes of 1 : 1 alternating copolymer, poly(3-nitrobenzylidene-1-naphthylamine-co-succinic anhydride) (L) and Ni(II) and Cu(II) complexes of 1 : 1 alternating copolymer, poly(3-nitrobenzylidene-1-naphthylamine-co-methacrylic acid) ($L^1$). The in vitro biological screening effects of the investigated compounds were tested against the fungal species including Aspergillus niger, Rhizopus stolonifer, Aspergillus flavus, Rhizoctonia bataicola and Candida albicans and bacterial species including Staphylococcus aureus, Escherichia coli, Klebsiella pneumaniae, Proteus vulgaris and Pseudomonas aeruginosa by well diffusion method. A comparative study of inhibition values of the copolymers and their complexes indicates that the complexes exhibit higher antimicrobial activity. Copper ions are proven to be essential for the growth-inhibitor effect. The extent of inhibition appeared to be strongly dependent on the initial cell density and on the growth medium. The nuclease activity of the above metal complexes were assessed by gel electrophoresis assay and the results show that the copper complexes can cleave pUC18 DNA effectively in presence of hydrogen peroxide compared to other metal complexes. The degradation experiments using Rhodamine B dye indicate that the hydroxyl radical species are involved in the DNA cleavage reactions.