• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2001년도 춘계학술대회 논문집(한국공작기계학회)
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• pp.137-142
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• 2001

Since recent production system becomes that of the small quantity, large volume with high quality production, accurate and high speed inspection system is required. In such situation, noncontact 3D measurement system which utilized CCD cameras is useful technique in terms of system cost, speed of data acquisition, measuring accuracy and application. However, it has low accuracy compared with contact 3D measurement system because of the camera distortion, non uniformity of laser distribution and so on. For those reasons, in this paper precision enhancement method is studied considering radial camera distortion, and laser distribution. A distortion correction method is applied even to the standard lens. The laser slit beam trajectory is determined by 3 method: based of the Gaussian function signal approximation, the median method, the center of gravity method and the peak point of the Gaussian function method.

• 한국표면공학회지
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• 제27권6호
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• pp.327-334
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• 1994

This work concerns a research for helicon wave plasma generators with applications to materials pro-cessing. For this end, helicon wave plasma source has been designed, constructed and tested. High density plasma was successfully produced and diagnosed with Langmuir probe. The measured maximum plasma de-nsity in this work was $10^{11}cm{-3}$ with 295 gauss of magnetic field and electron temperature was about 3.5eV. The uniformity of plasma densities in the radial direction was excellent with 160 gauss of magnetic field on the cross section which is 10cm apart from the edge of the exciting coil.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.81-81
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• 2013

반도체, LCD, MEMs 등 미세 전자소자의 제작과 깊은 관련이 있는 IT 산업은 자동차 산업과 함께 세계 경제를 이끌고 있는 핵심 산업이며, 그 발전 가능성이 크다고 할 수 있다. 이 중 반도체, LCD 공정 기술에 관해서 대한민국은 세계를 선도하여 시장을 이끌어 나가고 있는 실정이다. 이들의 공정기술은 주로 높은 수율(yield)을 기반으로 한 대량 생산 기술에 초점이 맞추어져 있기 때문에, 현재와 같은 첨예한 가격 경쟁력이 요구되는 시대에서 공정 기술 개발을 통해 수율을 최대한으로 이끌어 내는 것이 현재 반도체를 비롯한 미세소자 산업이 직면하고 있는 하나의 중대한 과제라 할 수 있다. 특히 반도체공정에 있어 발전을 거듭하여 현재 20 nm 수준의 선폭을 갖는 소자들의 양산이 계획 있는데 이와 같은 나노미터급 선폭을 갖는 소자 양산과 관련된 CD (critical dimension)의 감소는 공차의 감소를 유발시키고 있으며, 패널의 양산에 있어서 생산 효율 증가를 위한 기판 크기의 대형화가 이루어지고 있다. 또한, 소자의 집적도를 높이기 위하여 높은 종횡비(aspect ratio)를 요구하는 공정이 일반화됨에 따라 단일 웨이퍼 내에서의 공정의 균일도(With in wafer uniformity, WIWU) 및 공정이 진행되는 시간에 따른 균일도(Wafer to wafer uniformity)의 변화 양상에 대한 파악을 통한 공정 진단에 대한 요구가 급증하고 있는 현실이다. 반도체 및 LCD 공정에 있어서 공정 균일도의 감시 및 향상을 위하여 박막, 증착, 식각의 주요 공정에 널리 사용되고 있는 플라즈마의 균일도(uniformity)를 파악하고 실시간으로 감시하는 것이 반드시 필요하며, 플라즈마의 균일도를 파악한다는 것은 플라즈마의 기판 상의 공간적 분포(radial direction)를 확인하여 보는 것을 의미한다. 현재까지 플라즈마의 공간적 분포를 진단하는 대표적인 방법으로는 랭뮤어 탐침(Langmuir Probe), 레이저 유도 형광법(Laser Induced Fluorescence, LIF) 그리고 광섬유를 이용한 발광분광법(Optical Emission Spectroscopy, OES)등이 있으나 랭뮤어 탐침은 플라즈마 본연의 상태에서 섭동(pertubation) 현상에 의한 교란, 이온에너지 측정의 한계로 인하여 공정의 실시간 감시에 적합하지 않으며, 레이저 유도 형광법은 측정 물질의 제한성 때문에 플라즈마 내부에 존재하는 다양한 종의 거동을 살필 수 없다는 단점 및 장치의 설치와 정렬(alignment)이 상대적으로 어려워 산업 현장에서 사용하기에 한계가 있다. 본 연구에서는 최소 50 cm에서 최대 400 cm까지 플라즈마 내 측정 거리에서 최대 20 mm 공간 분해가 가능한 광 수광 시스템 및 플라즈마 공정에서의 라디칼의 상태 변화를 분광학적 비접촉 방법으로 계측할 수 있는 발광 분광 분석기를 접목하여 플라즈마 챔버 내의 라디칼 공간 분포를 계측할 수 있는 진단 센서를 고안하고 이를 실 공정에 적용하여 보았다. 플라즈마 증착 및 식각 공정에서 형성된 박막의 두께 및 식각률과 공간 분해발광 분석법을 통하여 계측된 결과와의 매우 높은 상관관계를 확인하였다.

• 한국주조공학회지
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• 제11권4호
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• pp.303-313
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• 1991

The Purification mechanism of high purity aluminum was studied through the variation of stirring speed and coolant flow rate in the stirring method. In the stirring method the degree of purification was changed as the following factors;the variation of diffusion boundary layer thickness the variation of growth rate and the solute concentration of the residual melt. The concentration of Fe and Si was decreased as the stirring speed and the radial distance increased. In a high stirring speed of 2000rpm with unidirectional stirring mode, the uniformity of solutes was obtained. On the other hand, the purification of Si was done by the combinations of stirring method, fractional melting and acid leaching. In the case of Si purification, the centrifugal force developed in the melt acted as the significant purification factor. It was possible to obtain the purified 3N grade Si crystal after the complete elimination of residual aluminum by fractional melting and acid leaching.

• 대한기계학회논문집B
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• 제23권3호
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• pp.388-397
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• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• 한국결정학회지
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• 제14권2호
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• pp.84-92
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• 2003

고속인상은 후처리에 의하여 쉽게 제거될 수 있도록 성장 결함 분포를 작게 만들기 용이하다. 본 연구에서는, 1.0 mm/min 이상의 속도를 갖는 고속 인상 결정을 육성하였으며, 결정 내의 성장 결함 분포를 분석하였다. 최근의 Cz-Si 결정 성장에서 특정 온도구간에서의 냉각속도와 고액계면에서의 온도구배의 균일성 등이 성장 결함 형성에 대하여 인상속도보다 더 중요한 영향을 주는 것이 발견되었다. 따라서, 고속 인상 결정에서 냉각속도와 온도구배의 영향을 분석하였으며, 이를 실제 관찰된 결함 형성거동과 비교하였다. 이론적 고찰을 통하여 공동 결함 형성에 대한 유효인자(Ω)를 도출하였으며, 이로부터 공동 결함의 반경방향 분포 특성을 효과적으로 설명하였다.

• 한국생산제조학회지
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• 제22권2호
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• pp.310-317
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• 2013

In this paper, the contact pressure of the wafer and polishing pad for final polishing process for 300 mm-wafer were investigated through numerical analysis using FEM tool, ANSYS. The distribution of the contact pressure is one of main parameters which affects on the flatness and surface roughness of polished wafers. Two types of polishing head, a hard type head with ceramic disk and a soft type head with air bag were considered. The effects of the deformation and initial shape of table on the contact pressure were also examined. Both heads and tables were modeled as 3D finite element model from solid model, and the material properties of polishing pads and rubber plate for the air-bag head were obtained from tensile tests. The contact pressure deviation on wafer surface was smaller with air bag head than hard type head even when the table had form errors such as convex or concave. From this 3D analysis, it could be concluded that the air-bag head has better uniformity of the contact pressure on wafer. Also, the effects of inner diameter of air bag and radial clearance between wafer and retainer were investigated as view point of contact pressure concentration on the edge of wafer.

• 한국정밀공학회지
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• 제28권3호
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• pp.323-329
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• 2011

Certified reference materials (CRMs) have been used to calibrate surface profilers for reliable measurements. In this paper, we present a newly designed step height CRM which has a step height pattern with two different widths and various special patterns for checking radial magnification, distortion of optical viewing systems, etc. Especially, it could be useful for multi-probe inspection instruments in the manufacturing lines. The fabrication was done by conventional optical lithography and dry etching process with optimized conditions. To verify the step height values, a white-light scanning interferometer was used with objective lenses having magnification of $10{\times}$ and $100{\times}$. CRMs with nominal step heights of $0.5\;{\mu}m$, $1\;{\mu}m$, $3\;{\mu}m$, $5\;{\mu}m$, $7\;{\mu}m$, and $10\;{\mu}m$ were fabricated and the uniformity of these CRMs was evaluated to be less than 3 nm ($1{\sigma}$).