• Journal of Internet Computing and Services
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• v.9 no.6
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• pp.117-125
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• 2008

With increase of concern about the Ubiquitous application, the necessity of the computer system which is miniaturized is becoming larger. The ARM processor is showing a high share from embedded system market. In this paper, ideal method for RTD-1000 controller construction and development is described using ARM microcontroller. Existing RTD-1000 measures distance of disconnection or defect of sensing casket by measuring receiving reflected wave which was sent via copper wire inside the leaking sensing rod. Using this RTD-1000, leakage and breakage of water and oil pipe can be sensed and it reports damage results to the networks. But, existing RTD-1000 wastes hardware resources much and costs a great deal to installation. Also, it needs a cooling device because the heating problem, and has some problem of the secondary memory unit such as the hard disk. So, long tenn maintenance has some problems in the outside install place. In this paper, for the resolving the problem of RTD-1000, RTD-1000A embedded system based on ARM is proposed and simulated.

• Journal of Korea Multimedia Society
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• v.14 no.8
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• pp.1041-1049
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• 2011

According to the development of society and infrastructure, effective underground facility management is growing more important them ever. In the process various monitoring systems are studied and developed for water works pipe-network. Especially, RTD-1000 system with the based on Pc. Reflector-monitoring device is constructed and steered by several local governments. But, this system have to be improved result from based on PC system structure at the point of resource management, heat, power consumption and size. In this paper, RTD-2000 is proposed are a substitution of improved RTD-1000 with many respect and portable one. This system is designed and implemented with ARM-9 development kit based on WinCE and LCD eliminate TDR(Time Domain Reflector-Meter). Various surveillance programs based on windows are mounted on RTD-1000 are replaced with dedicated embedded application softwares. Simulation and evaluation for performance comparison are performed for the prove of effectiveness of RTD-2000.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1806-1808
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.431-434
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• 1998

Platinum-Cobalt alloy thin films were deposited on Al$_2$O$_3$ substrate by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the Al$_2$O$_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : 4.4 W/$\textrm{cm}^2$, Co : 6.91 W/$\textrm{cm}^2$, working vacuum on and annealing conditions of 1000 $^{\circ}C$ and 60 min, the resistivity and the sheet resistive thin films were 15 ${\mu}$$\Omega$$.$cm and 0.5 $\Omega$/$\square$, respectively. The TCR value of Pt-Co a films was measured with various thickness of thin films and annealing temperature. T TCR value is gained under condition 3000${\AA}$ of thin films thickness and 1000$^{\circ}C$ of temperature. These results indicate that Pt-Co alloy thin films have potentiality for the wide temperature ranges.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.3-9
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• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2544-2546
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• 1998

The electrical and physical charateristics of Pt-Co alloy thin films on $Al_2O_3$ substrate, deposited by r.f cosputtering respectively, were analyzed with thickness of thin films ($1700{\sim}10000{\AA}$) and increasing annealing temperature ($800{\sim}1000^{\circ}C$). At input power of Pt : 4.4 W/$cm^2$, Co : 6.91 W/$cm^2$, working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$) and 60 min, the resistivity and sheet resistivity of Pt-Co thin films with thickness of $3000{\AA}$ was $15{\mu}{\Omega}{\cdot}cm$ and 0.5 ${\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value of 3850 ppm/$^{\circ}C$ in temperature range($200{\sim}400^{\circ}C$) is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. The thermal charateristics of Pt-Co micro heaters were analysed with Pt-Co RTD integrated on the same substrate. In the analysis of characteristics of Pt-Co micro heaters, the Pt-Co micro heaters with thickness of $3000{\AA}$ and annealing temperature of $1000^{\circ}C$ had a good linearity and temperature is up to $468.2^{\circ}C$ with 2.1 watts of the heating power.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.239-240
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• 2014

본 논문에서는 국제 핵융합실험로용 VS 컨버터 제어기 해석 및 실험에 대하여 서술하였다. VS 컨버터는 플라즈마의 수직 안정성을 제어하기 위해서 ${\pm}1000V$의 정격전압과 최대 ${\pm}25kA$의 전류를 공급해야 하며, 영 전류구간이 없이 4상한 운전을 수행할 수 있어야 한다. 이를 위해서 부하전류의 크기에 따른 동작모드 구분과 순환전류제어기, 차전류 제어기가 요구되며 싸이리스터의 소자 특성에 의하여 발생하는 중복각 보상과 싸이리스터의 전류실패를 방지하는 감마제어가 포함이 된 점호각이 보장 되어야 한다. 본 논문에서는 국제 열핵융합실험로용 VS 컨버터 제어기를 해석하고, 실제 제어기와 RTDS를 연동하여 9ms의 순환전류 제어기 응답성과 계통에 50% 새그가 발생하였을 때 전류실패를 방지하는 감마제어의 타당성을 실험으로 확인하였다.

• Journal of Internet Computing and Services
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• v.9 no.4
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• pp.157-166
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• 2008

There has been a renewal of interest in management of underground facility in recent years. As several research have been made on management for underground facility of waterworks pipe. In this paper smart-tag is defined and applied to requiring ubiquitous environment. Also, GPS is essential technology for the implementation of proposed program, which has GPS and RFID mixed business model. And it manages data of underground facility with RFID system effectively and provides the high quality practical effectiveness of entire system through GPS receiving module and network communication on GIS. In conclusion, this paper proposed applications management system with location mixed database. Proposed database and interface skill is tested and evaluated through the simulation.