• Title/Summary/Keyword: RTA treatment

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Effect of annealing on the properties of zinc doped indium oxide(IZO) films (후열처리에 따른 Indium Zinc Oxide(IZO) 박막의 특성변화)

  • Kim, Dae-Hyun;Kim, Sang-Mo;Choi, Hyung-Wook;Kim, Kyung-Hwan;Rim, You-Seong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.260-261
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    • 2008
  • In this study, we investigated the properties of Indium Zinc Oxide (IZO) films prepared in facing targets sputtering (FTS) system at room temperature as function of oxygen contents. As as-deposited films were rapidly thermal annealing on air atmosphere of $400^{\circ}C$ for 30s. As a result, the transmittance of IZO films increased with increasing oxygen flow in the visible range. After rapidly thermal annealing to films, the optical properties of films improved than films deposited at R.T, but the electrical properties decreased. Before RTA treatment, the lowest resistivity IZO is $5.4\times10^{-4}[\Omega{\cdot}cm]$ at oxygen gas flow. But, after RTA treatment, IZO films have the value of lowest resistivity at the lower oxygen gas ratio in compare with before RTA treatment. The resistivity of IZO films is $7.29\times10^{-4}[\Omega{\cdot}cm]$ at pure argon atmosphere.

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RTA Effect on Transport Characteristics in Al0.25Ga0.75As/In0.2Ga0.8As pHEMT Epitaxial Structures Grown by Molecular Beam Epitaxy (MBE로 성장된 Al0.25Ga0.75As/In0.2Ga0.8As pHEMT 에피구조의 RTA에 따른 전도 특성)

  • Kim, Kyung-Hyun;Hong, Sung-Ui;Paek, Moon-Cheol;Cho, Kyung-Ik;Choi, Sang-Sik;Yang, Jeon-Wook;Shim, Kyu-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.605-610
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    • 2006
  • We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

The GaAs Inversion-type MISFET using Fluoride Gate Insulator (불화물 게이트 절연막을 이용한 반전형 GaAs MISFET)

  • KWang Ho Kim
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.3
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    • pp.61-66
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    • 1993
  • The interface properties of Fluoride/GaAs structures were investigated. It was foung that rapid thermal annealing(RTA) typically 800-850$^{\circ}C$for 1 min, was useful for improving the interface properties of that structures. The analysis by means of SIMS indicated that interdiffusion of each constitutional atom through the interface was negligible. The interfacial atom bonding model for RTA treatment was proposed. Bases on these results, inversion-type GaAs MISFET was fabricated using standard planar technologies.

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Influence of RTA treatments on optical properties of ZnO nanorods synthesized by wet chemical method

  • Shan, Qi;Ko, Y.H.;Lee, H.K.;Yu, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.190-190
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    • 2010
  • Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

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Luminescent Properties of Y2O3:Eu3+ Thin Film Through Spin-coating and Rapid Thermal Annealing Process (스핀코팅 및 급속열처리 공정을 통해 형성된 Y2O3:Eu3+ 박막의 발광특성)

  • Jehong Park;Yongseok Jeong
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.1
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    • pp.88-91
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    • 2024
  • The europium doped yttrium oxide (Y2O3:Eu3+) thin film was formed on a Si substrate by the conventional spin-coating process followed by rapid thermal annealing (RTA) treatment. The spinning profiles such as rotation speed, acceleration and holding times were controlled during the spin-coating process for the best condition of the Y2O3:Eu3+ thin film. The RTA treatment was conducted for several temperature in order to crystallize the spin coated film. The Y2O3:Eu3+ thin film presented best performance in the conditions of 4000 rpm, 30 s and 10 s of rotation speed, acceleration time and holding time, respectively, at a fixed RTA temperature of 900 ℃.

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Improvement of carrier mobility on Silicon-Germanium on Insulator MOSFEI devices with a Si-strained layer (Si-strained layer를 가지는 Silicon-Germanium on Insulator MOSFET에서의 이동도 개선 효과)

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.7-8
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    • 2006
  • The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

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Effects of lead metal and annealing methods on low resistance contact formation of polycrystalline CdTe thin film (다결정 CdTe박막의 저저항 접축을 위한 배선금속 및 열처리방법의 효과에 관한 연구)

  • 김현수;이주훈;염근영
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.619-625
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    • 1995
  • Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

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A Pediatric Case of Long-term Untreated Distal Renal Tubular Acidosis

  • Kedsatha, Philavanh;Shin, Hee Young;Choi, Yong;Cheong, Hae Il;Cho, Tae-Joon;Yi, Eunsang;Maisai, Mayfong
    • Childhood Kidney Diseases
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    • v.24 no.2
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    • pp.115-119
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    • 2020
  • Distal renal tubular acidosis (dRTA) is a rare renal tubular disorder characterized by normal anion gap metabolic acidosis, hypokalemia, and high urine pH. It can be inherited or acquired. In untreated pediatric patients with dRTA, rickets and growth retardation are common. We report the case of a 12-year-old Lao girl who presented with typical clinical features of dRTA with severe bone deformities that developed after a bed-ridden state due to a bicycle accident at the age of 8 years. Initial laboratory tests revealed metabolic acidosis with a normal anion gap, hypokalemia, and alkali urine. Renal ultrasonography revealed bilateral medullary nephrocalcinosis. Whole exome sequencing revealed no pathogenic mutations. After treatment with oral alkali, potassium, and vitamin D, she could walk and run. Later, she underwent corrective orthopedic surgeries for bony deformities. Thus, in pediatric dRTA patients, despite severe symptoms remaining untreated, accurate diagnosis and proper management can improve quality of life.

The Study on Dielectric and RTA Property of Oxide Thin-films (산화물 박막 커패시터의 RTA 처리와 유전 특성에 관한 연구)

  • Kim, I.S.;Lee, D.Y.;Cho, Y.R.;Song, J.S.
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.23-25
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    • 2001
  • In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

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Effects of Resveratrol and Resveratryl Triacetate on The Inflammatory Responses of Human Epidermal Keratinocytes Exposed to Airborne Particulate Matter PM10 (대기 미립자 물질 PM10에 노출된 인간 표피 각질형성세포의 염증 반응에 대한 레스베라트롤과 레스베라트릴 트라이아세테이트(RTA)의 영향)

  • Choi, Min A;Seok, Jin Kyung;Lee, Jeong-won;Lee, Shin Young;Kim, Young Mi;Boo, Yong Chool
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.44 no.3
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    • pp.249-258
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    • 2018
  • Airborne pollution causes oxidative damage, inflammation, and premature aging of skin. Resveratrol is a polyphenol compound that has various biological activities such as antioxidant, anti-inflammation, and anti-melanogenic activities but it is unstable to heat and light. Resveratryl triacetate (RTA) is a new cosmetic ingredient that is more stable than resveratrol and its skin safety and whitening efficacy have been reported previously. The purpose of this study was to examine the effects of resveratrol and resveratryl triacetate (RTA) on the inflammatory responses of human epidermal keratinocytes (HEKs) exposed to airborne particulate matters with a diameter of < $10{\mu}m$ (PM10). Cultured HEKs were exposed to PM10 in the absence or presence of resveratrol and RTA. Assays were undertaken to determine cell viability, the production of reactive oxygen species (ROS), and the expression of inflammatory cytokines. PM10 treatment decreased cell viability, and increased the expression of pro-inflammatory cytokines such as tumor necrosis $factor-{\alpha}$ ($TNF-{\alpha}$), $interleukin-1{\beta}$ ($IL-1{\beta}$), interleukin-6 (IL-6), and interleukin-8 (IL-8). Resveratrol and RTA reduced cell death and ROS production induced by PM10. PM10-induced mRNA expression of the inflammatory cytokines was either attenuated (IL-6), or enhanced ($IL-1{\beta}$), or unaffected ($TNF-{\alpha}$ and IL-8) by resveratrol and RTA. PM10-induced IL-6 protein expression was attenuated by resveratrol and RTA. This study suggests that resveratrol and RTA have activities regulating cell damage and inflammatory responses of the skin exposed to airborne particulate matters.