• Title/Summary/Keyword: RTA process

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Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications (극한 환경 MEMS용 옴익 접촉을 위한 다결정 3C-SiC 박막의 표면 처리 효과)

  • Chung, Gwiy-Sang;Ohn, Chang-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.234-239
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    • 2007
  • This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

Co/Ti Bilayer Silicidation on the $\textrm{p}^{+}$-Si Region Implanted with High Dose of $\textrm{BF}_2$ ($\textrm{BF}_2$가 고농도로 이온주입된 $\textrm{p}^{+}$-Si 영역상에 Co/Ti 이중막 실리사이드의 형성)

  • Jang, Ji-Geun;Sin, Cheol-Sang
    • Korean Journal of Materials Research
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    • v.9 no.2
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    • pp.168-172
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    • 1999
  • We have studied the formation of Co/Ti bilayer silicide with low resistivity and good thermal stability on the heavily boron doped $\textrm{p}^{+}$-Si region. In this paper, Co/Ti bilayer silicides were fabricated by depositing Co($150\AA$)/Ti($50\AA$) films on the clean $\textrm{p}^{+}$-Si substrates in an E-beam evaporator and performing the two step RTA process (first annealing: 650$50^{\circ}C$/20sec, second annealing: $800^{\circ}C$/20sec) in a $N_2$ambient with the pressure of $\textrm{10}^{-1}$atm. Co/Ti bilayer silicides obtained from our experiments exhibited the low resistivity of about $18\mu\Omega$-cm and the uniform thickness of about $500\AA$ without change of sheet resistance and agglomeration under the long post0annealing time up to $1000^{\circ}C$.

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Effects of thermal treatment on structural and electrical properties of DLC films deposited by FCVA method (FCVA 방법으로 증착된 DLC 박막의 열처리에 따른 구조적, 전기적 물성 분석)

  • Kim, Young-Do;Chang, Seok-Mo;Park, Chang-Kyun;Uhm, Hyun-Seok;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1536-1538
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    • 2002
  • Effects at thermal treatment on the structural and electrical properties at DLC films have been studied. The DLC films were deposited by using a modified FCVA system as a function at negative substrate bias voltage, deposition time, and nitrogen flow rate. The thermal treatment on DLC films could be achieved by performing the RTA process at $600^{\circ}C$, 2min. Structural investigation on the thermal treatment effect was evaluated by inspecting the Raman spectroscopy, XPS, AFM, and internal compressive stress. In addition, the electrical properties of DLC films were evaluated by using the high current source and Lab-View data acquisition system. As the result at RTA treatment, $sp^3/sp^2$ ratio and internal compressive stress of the DLC films were decreased tram 5% to 22% and from 1GPa to 3GPa, and the $I_D/I_G$ intensity ratios was increased from 0.19 to 0.35. It was also found that the variation of internal stress of DLC films strongly agree with the variation of $sp^3/sp^2$ fraction and $I_D/I_G$ intensity ratio.

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Study of Effect of PZT Thin Film Prepared in Different Post-Annealing Temperature Using SIMS (이차이온질량분석기를 이용한 PZT 박막의 후열처리 온도에 따른 특성에 관한 연구)

  • Shenteng, Shenteng;Lee, Tae-Yong;Lee, Kyung-Chun;Hur, Won-Young;Shin, Hyun-Chang;Kim, Hyun-Duk;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.5
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    • pp.392-397
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    • 2011
  • The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

Low-temperature crystallization of high-dielectric (Ba,Sr)$TiO_3$ thin films for embedded capacitors

  • Cho, Kwang-Hwan;Kang, Min-Gyu;Kang, Chong-Yun;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.21-21
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    • 2010
  • (Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

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Low Temperature Sintering Process of Sol-gel Derived Ferroelectric Sr0.9Bi2.1Ta1.8Nb0.2O9 Thin films (Sol-gel 법으로 제조된 강유전체 Sr0.9Bi2.1Ta1.8Nb0.2O9 박막의 저온결정화 공정)

  • 김영준;김병호
    • Journal of the Korean Ceramic Society
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    • v.40 no.3
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    • pp.279-285
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    • 2003
  • Ferroelectric S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$ thin films with 200 nm thicknesses were deposited on Pt/Ti $O_2$/ $SiO_2$/Si Substrates by a sol-gel method. In these experiments, Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. After UV-irradiation and RTA processes, the remanent polarization value (2 $P_{r}$) of SBTN thin films with annealed at $650^{\circ}C$ was 8.49 and 11.94 $\mu$C/$\textrm{cm}^2$ at 3 V and 5 V, respectively.

A Study on the Real - time Search Algorithm based on Dynamic Time Control (동적 시간제어에 기반한 실시간 탐색 알고리즘에 관한 연구)

  • Ahn, Jong-Il;Chung, Tae-Choong
    • The Transactions of the Korea Information Processing Society
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    • v.4 no.10
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    • pp.2470-2476
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    • 1997
  • We propose a new real-time search algorithm and provide experimental evaluation and comparison of the new algorithm with mini-min lookahead algorithm. Many other real-time heuristic-search approached often divide the problem space to several sub-problems. In this paper, the proposed algorithm guarantees not only the sub-problem deadline but also total deadline. Several heuristic real-time search algorithms such as $RTA^{\ast}$, SARTS and DYNORA have been proposed. The performance of such algorithms depend on the quality of their heuristic functions, because such algorithms estimate the search time based on the heuristic function. In real-world problem, however, we often fail to get an effective heuristic function beforehand. Therefore, we propose a new real-time algorithm that determines the sub-problem deadline based on the status of search space during sub-problem search process. That uses the cut-off method that is a dynamic stopping-criterion-strategy to search the sub-problem.

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A Study on the Mask Fabrication Process for X-ray Lithography (X-선 노광용 마스크 제작공정에 관한 연구)

  • 박창모;우상균;이승윤;안진호
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.2
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    • pp.1-6
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    • 2000
  • X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

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Development of Linear Annealing Method for Silicon Direct Bonding and Application to SOI structure (실리콘 직접 접합을 위한 선형가열법의 개발 및 SOI 기판에의 적용)

  • 이진우;강춘식;송오성;양철웅
    • Journal of the Korean institute of surface engineering
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    • v.33 no.2
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    • pp.101-106
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    • 2000
  • SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

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Optimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor

  • Wang, Cong;Cho, Sung-Jin;Kim, Nam-Young
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.32-35
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    • 2013
  • In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).