• 한국태양에너지학회 논문집
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• 제30권1호
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• pp.7-12
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• 2010

As many grid-connected photovoltaic power conditioning systems (PVPCS)are installed in many residential areas simultaneously, these have raised potential problems of network protection on electrical power system. One of the numerous problems is an Islanding phenomenon. In this paper, active frequency drift (AFD) method, one of the anti-islanding methods which is analyzed by current magnitude compensation and calculation of the fundamental component. Both harmonic component and RMS value of the output current for THD analysis are provided and verified by simulation.

• 전기학회논문지
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• 제56권11호
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• pp.1930-1936
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• 2007

According to previously published paper the phase advance angle is adopted to the BLDC motor drive with high speed. The report proposed describes the optimum algorism that phase current is in phase with the initial flat region of back EMF. This report studies the need of more leading phase advance angle compared with in phase concept between phase current and back EMF. In case of high reactance this report proposes the more phase advance angle than in phase. The test results more rms value of phase current and output power due to more phase advance angle than in phase. It will be helped the high power operation of BLDC motor at high speed.

• 청정기술
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• 제23권1호
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• pp.42-53
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• 2017

탈질과 탈황을 동시에 수행하는 과산화수소($H_2O_2$) 수용액 세정탑의 반응효율을 증가시키기 위해 예혼합이 이루어지는 혼합 냉각기(mixing quencher) 영역 내부의 유체유동에 대한 수치해석이 수행되었다. 산업공정에서 상용화되고 있는 세정탑 전단부의 혼합냉각기에서 과산화수소 수용액이 주입되는 노즐의 분사방식은 배기가스와 과산화수소 수용액의 혼합에 중요한 역할을 하며, 혼합냉각기에서의 혼합도는 세정탑 의 효율을 결정하는 중요 요소가 된다. 본 연구에서는 혼합냉각기 내부유체의 농도분포 개선을 목적으로 하여 혼합냉각기 내의 노즐 관의 배열을 조절하거나 노즐 팁 각도를 변경하며 유체혼합을 최적화하였다. 전산해석은 이 냉각기영역의 내부유동 및 각 유체 농도에 대한 RMS (root mean square) 값을 계산하여 내부유체의 혼합도의 개선을 확인하였다. 세부적으로는 노즐 관의 위치를 조절할 때 변경되는 냉각기 영역 후단의 농도 RMS 값을 확인하여 난류형성위치에 따른 최적화된 혼합도를 확인하였으며 기본형상 대비 난류형성방향을 조절하는 목적의 노즐 팁 각도를 증감하여 농도분포의 균질화를 비교하였다. 노즐 관의 배열에 따라 난류형성위치와 그에 따른 유체혼합이 해석되었다. 또한 노즐 팁 각도를 조절하는 경우에는 유동방향과의 각도에 따라, 흐름이 병류와 향류에 따라 혼합도의 최적화를 확인할 수 있었다. 노즐 관의 위치는 0.3 m, 노즐 팁은 병류의 $15^{\circ}$일 때 최적의 조건을 가지며 가장 낮은 RMS 값인 12.4%를 가졌다.

• 한국진공학회지
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• 제9권4호
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• pp.341-345
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• 2000

p형 Si (100)기판 위에 reactive DC magnetron sputtering으로 증착한 $ZrO_2$박막에 대하여 증착 조건과 열처리 조건에 따른 미세구조의 변화 및 전기적 특성 변화를 관찰하였다. 증착 및 열처리 온도가 증가하고 power 증가할수록 $ZrO_2$의 굴절율은 증가되어 이상적인 2.0~2.2에 근접하였다. 상온에서 증착된 $ZrO_2$ 박막은 비정질이며 $300^{\circ}C$에서 증착한 경우 $ZrO_2$박막은 다결정이었다. 산소 분위기에서 열처리를 수행한 박막의 RMS 값은 증착직후보다 높아지고 계면 산화막은 산소의 확산에 의해 두께가 증가하였다. A1/$ZrO_2$/p-type Si(100)의 C-V과 I-V 특성을 관찰하였고, 그 결과 산소분위기에서 열처리하는 경우 계면 산화막의 두께증가로 Cmax 및 누설전류가 감소함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• 전기학회논문지
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• 제67권4호
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• pp.531-537
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• 2018

This paper propose a bidirectional dc-to-dc converter employing dual inductor for current ripple reduction. Conventional bidirectional dc-to-dc converter uses a single inductor for two different modes; boost and buck; therefore it is difficult to satisfy the optimized inductance value for each mode. To improve this problem, the proposed converter adds two switches, a diode, and one inductor. By proper switching of the additional switch, the proposed converter operates with a inductor in boost mode, but it works with dual inductor in buck mode. Hence in both modes the proposed bidirectional converter can be operated with optimized inductance values. Most of all the optimized inductance in buck mode can reduce the current ripple and its effective value(rms), which are directly related to the temperature increase resulted in short lifetime of battery. To verify the validity of the proposed approach, we first analyzes the operation of the proposed converter theoretically, and implement computer-aided simulations and experiments using a prototype.

• 한국안전학회지
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• 제24권3호
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• pp.13-18
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• 2009

This paper is purposed to develop DAQ H/W, S/W and DB which can be used in developing electrical fire alarm system or in analyzing electrical fire cause, by detecting and monitoring precursor signals which have high possibility leading to electrical fire on electrical distribution wires. In this paper, developed was DAQ H/W adopting the C8051FXXX CPU which can analyze the measurement signals of current and voltage in electrical distribution wires, other CPU was investigated in view of the best digital sampling rate on the basis of previous researches for electrical fire alarm system. Also, the S/W which can interface with DAQ H/W's communication protocol and can be applied for electrical fire causes analysis, are embodied by LabVIEW. The combined DAQ H/W and S/W could analyze efficiently normal as well as abnormal electrical signals such as RMS value, instantaneous value of current and voltage, frequency signals etc, on the electrical wires. Also, DB system was constructed for recording various analysis results for precursor signals including voltage and current signals. The results by simulator and experiment showed that the suggested scheme with DAQ H/W, S/W and DB in this paper has high usability.

• 한국안전학회지
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• 제12권4호
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• pp.63-69
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• 1997

This paper presents a design method for a filter application in a parts-of FA(Factory Automation). Normal equations for ripple voltage and current are derived in terms of dimensionless quantities, and these equations can be used directly to evaluate the values of LC-filter components, taking into consideration the effect of the ripple components on the rms value of the PWM-generated ripple components. Using describing function technique, design equations of the filter are derived. The data needed for the filter evaluation are the amplitude of current ripple and the frequency of square pulses delivered by the HE(Harmonic Elimination) inverter algorithm. Experimental results show that the design of the filter can be based on the method proposed and that the filter can provide a significant reduction of ripple components.

• 한국안전학회지
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• 제30권3호
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• pp.26-31
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• 2015

This paper describes the characteristics of voltage drop and thermal for poor connection on electrical connector of circuit breaker in control box of small size pulverizer. In order monitor, we did the changes of RMS in voltage and temperature value with video and made normal state over $2.5N{\cdot}m$ and poor connections state below $0.2N{\cdot}m$ by screw gage. In case of voltage signal, the voltage drop was increased when the current was increased due to poor connections. In case of temperature signal, the temperature difference indicates ten times at 5A and fourteen times at 15A in the normal state. According to increase thermal energy, the insulation of electrical wiring and connector of circuit breaker can be carbonized. The results of this study will be useful to the development of preventive devices and system for electric fire by poor connection at small size pulverizer.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.