• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.271-275
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• 2008

The MAM(Megasonic Agitated Module) has been fabricated for improving the characteristics of wet etching. The characteristics of the MAM are investigated during the wet etching with and without megasonic agitation in this paper. The adoption of the MAM has improved the characteristics of wet etching, such as the etch rate, etch uniformity, and surface roughness. Especially, the etching uniformity on the entire wafer was less than ${\pm}1%$ in both cases of Si and glass. Generally, the initial root-mean-square roughness($R_{rms}$) of the single crystal silicon was 0.23nm. Roughnesses of 566nm and 66nm have been achieved with magnetic stirring and ultrasonic agitation, respectively, by some researchers. In this paper, the roughness of the etched Si surface is less than 60 nm. Wet etching of silicon with megasonic agitation can maintain nearly the original surface roughness during etching. The results verified that megasonic agitation is an effective way to improve etching characteristics of the etch rate, etch uniformity, and surface roughness and that the developed micromachining system is suitable for the fabrication of devices with complex structures.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.280-284
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• 2020

Electron beam irradiation is widely used as a type of surface modification technology to advance surface properties. In this study, the effect of electron beam irradiation on properties, such as surface hardness, wear resistance, roughness, and critical load of Titanium Aluminium nitride (TiAlN) films was investigated. TiAlN films were deposited on the SKD-61 substrate by using cathode arc ion plating. After deposition, the films were bombarded with intense electron beam for 10 minutes. The surface hardness was increased up to 4520 HV at electron irradiation energy of 1500 eV. In addition, surface root mean square (RMS) roughness of the films irradiated at 1500 eV shows the lowest roughness of 484 nm in this study.

• Journal of Adhesion and Interface
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• v.13 no.1
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• pp.24-30
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• 2012

Morphological changes of polyarylate (PAR) fiber treated with formic acid and ultraviolet (UV) were observed by using a scanning electron microscope (SEM) and an atomic force microscope (AFM). The results were analysed by using root mean square (RMS) roughness. In addition, the chemical changes of surface was investigated using contact angle and the interfacial adhesive strength between PAR fiber and PEN (Polyethylene naphthalate) matrix was calculated using the Pull-out test results. As the acid treatment concentration and UV irradiation time increased, cracks and pores were produced on the PAR fiber surface. Due to the roughness increased, the contact angle was decreased. For this reason, RMS roughness of PAR fiber was increased and the interfacial adhesive strength between the PAR fiber and PEN matrix was improved. The increase of interfacial adhesive strength was responsible for the increase of surface area which have cracks and pores.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.217-222
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-face n-type GaN were investigated using KOH solutions. It was observed that hexagonal pyramids were formed on the etched surface regardless of etching conditions. However, the size of the hexagonal pyramids was changed as the etching time and temperature increased, respectively. Initially, as the etching time and concentration of KOH solution increased, the hexagonal pyramid was observed to be dissociated into smaller pyramids. However, as the etching time increased further, the size of the hexagonal pyramids increased again, indicating that the etching of N-face n-type GaN by KOH solutions proceeded through the evolution of hexagonal pyramids, such as formation, dissociation and enlargement of pyramids. Furthermore, it was also observed that there is a correlation between the photoluminescence intensity of the etched surface and the value of root-mean-square roughness. The intensity of PL increased as the roughness value increased due to the enhancement of the extraction efficiency of the generated photons.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.277-281
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• 2009

Superhydrophobic $SiO_2$ thin films were successfully fabricated on a glass substrate by sol-gel method. To fabricate $SiO_2$ thin film with a high roughness, $SiO_2$ nano particles were added into tetraethoxysilane (TEOS) solution. The prepared $SiO_2$ thin film without an addition of $SiO_2$ nano particles showed a very flat surface with ca. 1.27 nm of root mean square (RMS) roughness. Otherwise, the $SiO_2$ thin films fabricated by using coating solutions added $SiO_2$ nano particles of 1.0, 2.0 and 3.0 wt% showed a RMS roughness of ca. 44.10 nm, ca. 69.58 nm, ca. 80.66 nm, respectively. To modify the surfaces of $SiO_2$ thin films to hydrophobic surface, a hydrophobic treatment was carried out using a fluoroalkyltrimethoxysilane (FAS). The $SiO_2$ thin films with a high rough surface were changed from hydrophilic to hydrophobic surface after the FAS treatment. Especially, the prepared $SiO_2$ thin film with a RMS roughness of 80.66 nm showed a water contact angle of $163^{\circ}$.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.676-680
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• 2016

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.72-74
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• 2003

We fabricated textured Ag substrates for coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. A strong {110}〈110〉 textured Ag substrate was obtained by cold rolling and annealing at 80$0^{\circ}C$: the full-width at half-maximum(FWHM) value of {110}〈110〉 poles was as sharp as 10$^{\circ}$. Surface morphology was evaluated by using Atomic force microscopy(AFM). Root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for deposition of superconductor films.

• Journal of the Society of Naval Architects of Korea
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• v.58 no.4
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• pp.243-252
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• 2021

The present study aims to investigate the interaction of a wire-type turbulence stimulator and the laminar boundary layer on a flat plate by flow field measurement. For the towing tank tests, a one-dimensional Laser Doppler Velocimetry (LDV) attached on a two-axis traverse was used to measure the streamwise velocity component of the boundary layer flow in zero pressure gradient, disturbed by a turbulence stimulator. The wire diameter was 0.5 and 1.0 mm according to the recommended procedures and guidelines suggested by the International Towing Tank Conference. Turbulence development by the stimulator was identified by the skin friction coefficient, mean and Root Mean Square (RMS) of the streamwise velocity. The laminar boundary layer with the absence of the wire-type stimulator was similar to the Blasius solution and previous experimental results. By the stimulator, the mean and RMS of the streamwise velocity were increased near the wall, showing typical features of the fully developed turbulent boundary layer. The critical Reynolds number was reduced from 2.7×10⁵ to 1.0×10⁵ by the disturbances caused by the wire. As the wire diameter and the roughness Reynolds number (Rek) increased, the disturbances by the stimulator increased RMS of the streamwise velocity than turbulent boundary layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Korean Journal of Remote Sensing
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• v.27 no.3
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• pp.225-234
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• 2011

This study proposes an inversion algorithm to extract the surface parameters, such as surface roughness and soil moisture contents, using multi-frequency SAR data. The study areas include the tidal flats of Jebu Island and the reclaimed lands of Hwaong district on the western coasts of the Korean peninsula. SAR data of three frequencies were accordingly calibrated to provide precise backscattering coefficients through absolute radiometric calibration. The root mean square (RMS) height and the correlation length, which can describe the surface roughness, were extracted from the backscattering coefficients using the inversion of the Integral Equation Method (IEM). The IEM model was appropriately modified to accommodate the environmental conditions of tidal flats. Volumetric soil moisture was also simultaneously extracted from the dielectric constant using the empirical model, which define the relations between volumetric soil moistures and dielectric constants. The results obtained from the proposed algorithm were verified with the in-situ measurements, and we confirmed that multi-frequency SAR observations combined with the surface scattering model for tidal flats can be used to quantitatively retrieve the geophysical surface parameters in tidal flats.