• 한국생산제조학회지
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• 제8권1호
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• pp.52-59
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• 1999

An experimental study on the grinding temperature, surface roughness and Acoustic Emission(AE) signals was conducted with different shapes of wheel. The grinding characteristics for slotted shapes of wheel changed by width and helical angle, were compared with those by general one. Lower grinding temperature was obtained for 30$^{\circ}$helical angle with 10mm width and Root Mean square(RMS) values of AE signals were lower for slotted shapes rather than general one. Surface roughness characteristics of slotted shapes found to be rough but the value of roughness for 45$^{\circ}$helical angel with 6mm width, represented to similar tendency general one.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.832-836
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• 1997

An experimental study on the grinding temperature, surface roughness and Acoustic Emission(AE) signal was conducted with different shapes of wheel. The grinding characteristics by slotted shapes of wheel changed by width and helical angle,were compared with those by general one. Lower grinding temperature was obtained for 30 .deg. helical angel with 10mm width and Root Mean Square(RMS) values of AE signals were lower for slotted shapes rather than general one. Surface roughness characteristic of slotted shapes found to be rough,but the value of roughness for 45 .deg. helical angel with 6mm width, represented to similar tendency general one.

• Structural Engineering and Mechanics
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• 제12권4호
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• pp.409-428
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• 2001

The characteristics of dynamic wheel loads of heavy vehicles running on bridge and rigid surface are investigated by using three-dimensional analytical model. The simulated dynamic wheel loads of vehicles are compared with the experimental results carried out by Road-Vehicles Research Institute of Netherlands Organization for Applied Scientific Research (TNO) to verify the validity of the analytical model. Also another comparison of the analytical result with the experimental one for Umeda Entrance Bridge of Hanshin Expressway in Osaka, Japan, is presented in this study. The agreement between the analytical and experimental results is satisfactory and encouraging the use of the analytical model in practice. Parametric study shows that the dynamic increment factor (DIF) of the bridge and RMS values of dynamic wheel loads are fluctuated according to vehicle speeds and vehicle types as well as roadway roughness conditions. Moreover, there exist strong dominant frequency resemblance between bounce motion of vehicle and bridge response as well as those relations between RMS values of dynamic wheel loads and dynamic increment factor (DIF) of bridges.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.863-866
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• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• 한국진공학회지
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• 제17권4호
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• pp.353-358
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• 2008

AlGaInP 기반 수직형 적색 LED (Light Emitting Diode)의 광추출효율을 증가시키기 위하여 화학적 etching 기술을 이용하여 n-AlGaInP 표면에 삼각꼴 모양의 거칠기를 형성하였다. Etching은 $H_3PO_4$계의 용액을 이용하여 화학적 etching을 진행 하였다. AlGaInP etching은 광추출효율의 증가와 밀접한 관련을 갖고 있으며 AFM (Atomic Force Microscope)을 이용하여 AlGaInP 표면을 분석하여 약 44 nm의 RMS (root-mean-square) 거칠기가 형성됨을 알 수 있었다. 광추출효율은 기존 수직형 적색 LED보다 거칠기가 형성된 수직형 적색 LED에서 41%의 높은 발광 효율을 보임으로써 고효율 수직형 적색 LED의 가능성을 보였다.

• 한국전자파학회논문지
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• 제24권1호
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• pp.91-97
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• 2013

지표면의 후방 산란 계수를 계산하는 지표면 산란 모델의 입력 변수로는 크게 수분함유량과 지표면 거칠기가 있고, 산란 계수 계산에 있어 지표면 거칠기의 영향이 수분함유량의 영향보다 크다. 본 연구에서는 지표면 거칠기의 정확한 측정 방법을 제기하고, 측정 오차를 분석한다. 이를 위하여 대표적인 지표면 거칠기 측정 장치인 pin-board profiler(1 m, 0.5 cm 간격)와 laser profiler(1 m, 0.25 cm 간격)를 이용하여 실제 지표면을 측정하였다. 두 측정 장치의 평균 차이는 유효 높이(RMS height)가 0.097 cm, 상관 길이(correlation length)가 1.828 cm이었다. 그리고 상관 함수, 상대오차를 분석한 결과, laser-profiler의 반복 측정에 대한 장치의 안전성이 더 좋았다. 두 측정 장치의 차이가 후방 산란 계수에 미치는 영향을 분석하기 위해 지표면 산란 모델을 이용하여 비교한 결과, 입사각 $20{\sim}60^{\circ}$에서 1 dB 이하의 차이를 보였다.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• 한국진공학회지
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• 제8권3A호
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• pp.218-223
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• 1999

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.