• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.243-243
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• 2010

This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area($156cm^2$) Multi-Si solar cells etched in RIE texture.

• 센서학회지
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• 제29권4호
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• pp.255-260
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• 2020

In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.

• 한국진공학회지
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• 제19권2호
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• pp.114-120
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• 2010

일반적으로 결정질 실리콘 태양전지에서 표면에 텍스쳐링(texturing)하는 것은 알칼리 또는 산성 같은 화학용액을 사용하고 있다. 그러나 실리콘 부족으로 실리콘의 양의 감소로 인하여 웨이퍼 두께가 감소하고 있는 추세에 일반적으로 사용하고 있는 습식 텍스쳐링 방법에서 화학용액에 의한 많은 양의 실리콘이 소모되고 있어 웨이퍼의 파손이 심각한 문제에 직면하고 있다. 그리하여 습식 텍스쳐링 방법보다는 플라즈마로 텍스쳐링할 수 있는 건식 텍스쳐링 방법인 RIE (reactive ion etching) 기법이 대두되고 있다. 그리고 습식 텍스쳐링으로는 결정질 실리콘 태양전지의 반사율을 10% 이하로는 낮출 수가 없다. 다결정 실리콘 웨이퍼 표면에 텍스쳐링을 하기 위하여 125 mm 웨이퍼 144개를 수용할 수 있는 대규모 플라즈마 RIE 장비를 개발하였다. 반사율을 4% 이하로 낮추기 위하여 공정가스는 $Cl_2$, $SF_6$, $O_2$를 기반으로 RIE 텍스쳐링을 하였고 텍스쳐링의 모양은 공정가스, 공정시간, RF 주파수 등에 의해 조절이 가능하였다. 본 연구에서 RIE 공정을 통하여 16.1%의 변환효율을 얻었으며, RF 주파수가 텍스쳐링의 모양에 미치는 영향을 살펴보았다.

• 한국재료학회지
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• 제20권12호
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• pp.649-653
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• 2010

In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.

• Current Photovoltaic Research
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• 제5권4호
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• pp.105-108
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• 2017

The reactive ion etching (RIE) technology which enables nano-texturatization of surface is applied on monocrystalline silicon solar cell. The additional RIE process on alkalized textured surface further improves the blue response and short circuit current. Such parameter is characterized by surface reflectance and quantum efficiency measurement. By varying the RIE process time and matching the subsequent processes, the absolute efficiency gain of 0.13% is achieved. However, the result indicates potential efficiency gain could be higher due to process integration. The critical etch process time is discussed which minimizes both front surface reflectance and etching damage, considering the challenges of required system throughput in industry.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.599-599
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• 2012

태양광 발전은 태양광의 입사각과 셀 단면이 이루는각도에 따라 출력특성이 변화된다. 따라서 태양의 위치에 따른 출력특성이 바뀌며 이에 의해 발전가능 시간이 변화된다. 더욱이 건재 일체형(BIPV)의 경우 설치 방향을 조절 할 수 없으므로 입사각에 따른 출력특성이 더욱 중요하다. 이와 따라 결정질 태양전지의 입사각에 따른 광학 특성 변화는 태양전지 표면에 형성되는 Texture의 영향을 받는다. 일반적으로 습식 texturing 방법으로는 화학적인 반응을 이용한 WET 공정, 그리고 건식 texturing 방법으로는 플라즈마를 이용한 reactive ion etching (RIE) 공정이 사용된다. 본 연구에서는 RIE, WET 공정을 사용하여 만든 texturing 구조의 결정질 태양전지를 SEM 장비를 이용하여 표면의 형상을 분석하고, 광 입사각에 따른 양자효율의 특성에 대하여 분석하였다.

• 센서학회지
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• 제20권3호
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• pp.207-212
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• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.