• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.05a
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• pp.417-420
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• 2010

The high enthalpy plasma research center in Chonbuk national university is under construction with the support of the ministry of the education, science and technology as a fundamental research project The project periods are five year and started at July, 1, 2009. The total project budget is about 39,300 million Won. Four types of plasma equipment will be installed in this research center during the project periods. The equipments are 1 set of 0.4 MW class enhanced Huels type plasma equipment, 1 set of 2.4MW class enhanced Huels type plasma equipment, 1 set of 60Kw RF plasma equipment and 1s set of 200 kW RF plasma equipment.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.11
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• pp.291-293
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• 1997

A new quadrature RF coil is designed for Breast MR Imaging. Quadrature RF coils for MRI have been useful to improve the signal-to-noise ratio (SNR) by "$\sqrt{2}$" using two orthogonal RF coils in combination. A modified Breast Quadrature coil is designed. It is a modified type of the high-pass birdcage coil. To reduce the field distortion, by using current feeding, the field pattern is optimized to achieve a quadrature circularly-polarized field pattern. The coil has been implemented for receive-only mode, and tested by phantom imaging. The experimental results show the utility of the proposed RF coil.

• Proceedings of the Korean Society of Computer Information Conference
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• 2023.01a
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• pp.167-168
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• 2023

본 논문에서는 저전력 433MHz 주파수 RF 신호가 여러 종류의 벽을 투과할 시 신호에 일어나는 감쇠를 비교한다. 국내에서 기존의 와이파이, 블루투스 같은 고주파수 대역의 RF 신호에 관한 연구 및 실험은 많이 행해지었지만, 한국의 전파 관리법에 의해 성능이 제한된 비면허 주파수인 433MHz 대역의 RF 신호에 관한 연구는 매우 적게 이루어져 있다. 이러한 저주파수 대역 신호의 가장 큰 장점은 장거리 통신에 능하고 벽 투과특성이 뛰어나다는 것이다. 본 논문에서는 실험을 통해 433MHz 대역 RF 신호가 여러 종류의 장애물을 통과 시 신호 세기가 어떻게 변하는지 각각 비교하고 이를 통해 비가시 영역에서 저전력 주파수 통신의 사용 가능성을 확인한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.293-297
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• 2010

We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which $In_2O_3$, $Ga_2O_3$ and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 $cm^2/V{\cdot}s$ at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

• ETRI Journal
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• v.37 no.1
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• pp.128-137
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• 2015

In this work, a fishbone-type transmission line employing a comb-type ground plane (FTLCGP) was fabricated on polyethersulfone (PES) substrate, and its RF characteristics were thoroughly investigated. According to the results, it was found that the FTLCGP on PES showed periodic capacitance values much higher than other types of transmission lines due to a coupling capacitance between the signal line and ground, which resulted in a reduction of wavelength and line width. Using the theoretical analysis, we also extracted the bandwidth characteristic of the FTLCGP on PES. According to the result, the FTLCGP structure showed a cut-off frequency of 280 GHz.

• Journal of IKEEE
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• v.11 no.4
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• pp.145-151
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• 2007

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss ${Al_2}{O_3}$ core material were investigated. The size of the chip inductors fabricated in this work were $0.86{\times}0.46{\times}0.45m^3$, $1.5{\times}1.0{\times}0.7m^3$, $2.1{\times}1.5{\times}1.0m^3$, and $2.4{\times}2.0{\times}1.4m^3$ and copper (Cu) wire with $27{\sim}40{\mu}m$ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 13 to 100nH and exhibit the self-resonant frequency (SRF) of 6.4 to 1.1GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 50 to 80 in the frequency range of 300MHz to 1.3GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.