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http://dx.doi.org/10.4313/JKEM.2010.23.4.293

The Characteristic Changes of Amorphous-InGaZnO Thin Film according to RF Power  

Kim, Sang-Hun (청주대학교 전자공학과)
Park, Yong-Heon (공군사관학교 물리학과)
Kim, Hong-Bae (청주대학교 전자정보공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.4, 2010 , pp. 293-297 More about this Journal
Abstract
We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which $In_2O_3$, $Ga_2O_3$ and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 $cm^2/V{\cdot}s$ at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.
Keywords
Amorphous InGaZnO (a-IGZO); RF magnetron sputtering; RF power; Transparent thin film transistor(TTFT);
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1 R. E. Presley, C. L. Munsee, C.-H. Park, D. Hong, J. F. Wager, and D. A. Keszler, "Tin oxide transparent thin-film transistors", J. Phys. D: Appl. Phys., Vol. 37, p. 2810, 2004.   DOI
2 T. Iwasaki, H. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system", Appl. Phys. Lett., Vol. 90, p. 242114, 2007.   DOI
3 N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, "Zn-In-O based thin-film transistors: Compositional dependence", Phys. Stat. Sol., Vol. 205, No. 8, p. 1915, 2008.   DOI
4 H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application", Journal of Non-Crystalline Solids, Vol. 352, No. 9-20, p. 851, 2006.   DOI
5 A. Suresh, P. Gollakota, P. Wellenius, A. Dhawan, and J. F. Muth, "Transparent, high mobility InGaZnO thin films deposited by PLD", Thin Solid Films, Vol. 516, No. 7, p. 1326, 2008.   DOI
6 M. Ito, C. Miyazaki, M. Ishizaki, M. Kon, N. Ikeda, T. Okubo, R. Matsubara, K. Hatta, Y. Ugajin, and N. Sekine, "Application of amorphous oxide TFT to electrophoretic display", Journal of Non-Crystalline Solids, Vol. 354, No. 19-25, p. 2777, 2008   DOI
7 Chen, X., Guan, W., Fang, G., and Zhao, X. Z., "Influence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition", Appl. Surf. Sci., Vol. 252, No. 5, p. 1561, 2005.   DOI
8 E. Terzini, P. Thiakan, and C. Minarini, “Properties of ITO thin films deposited by RF magnetron sputtering at elevated substrate temperature”, Mater. Sci. Eng. Vol. B77, p. 110, 2000.
9 D.-H. Kim, J.-K. Kang, K.-J. Yang, Y. S. Do, S.-J. Sung, D.-H. Son, and B.-D. Choi, "Technological status and prospect of oxide thin film transistors", KIC News, Vol. 11, No. 5, p. 1, 2008.
10 R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors", Appl. Phys. Lett., Vol. 82, No. 5, p. 733, 2003.   DOI
11 J. F. Wager, “Transparent electronics”, Science, Vol. 300, No. 5623, p. 1245, 2003.   DOI   ScienceOn
12 H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous oxide channel TFTs”, Thin Solid Films, Vol. 516, No. 7, p. 1516, 2008.   DOI
13 E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, "Recent advances in ZnO transparent thin film transistors", Thin Solid Films, Vol. 487, No. 1-2, p. 205, 2005.   DOI
14 R. Martins, P. Barquinha, A. Pimentel, L. Pereira, E. Fortunato, D. Kang, I. Song, C. Kim, J. Park, and Y. Park, "Electron transport in single and multicomponent n-type oxide semiconductors", Thin Solid Films, Vol. 516, No. 7, p. 1322, 2008.   DOI
15 Y. L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Peaton, I. I. Kravchenko, and J. M. Zavada, "Improved long-term thermal stability of InGaN/GaN multiple quantum well lightemitting diodes using TiB2- and Ir-based p-Ohmic contacts", Appl. Phys. Lett., Vol. 90, No. 24, p. 242103, 2007.   DOI