• 제목/요약/키워드: RF-sputtering

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Effect of Sputtering Power on Structural and Optical Properties of CuS Thin Films Deposited by RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링 방법으로 증착된 CuS 박막의 구조적 및 광학적 특성에 대한 스퍼터링 전력의 영향)

  • Lee, Sangwoon;Shin, Donghyeok;Son, Young Guk;Son, Chang Sik;Hwang, Donghyun
    • Current Photovoltaic Research
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    • v.8 no.1
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    • pp.27-32
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    • 2020

  • CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p3/2 and Cu 2p1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu2+ states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.

  • https://doi.org/10.21218/CPR.2020.8.1.027 인용 PDF KSCI

Structural, Optical, and Electrical Properties of Sputtered Al doped ZnO Thin Film Under Various RF Powers (RF 파워에 따라 스퍼터된 Al doped ZnO 박막의 구조적, 광학적, 전기적 특성)

  • Kim, Jong-Wook;Kim, Deok-Kyu;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.177-181
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    • 2011

  • We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

  • https://doi.org/10.4313/JKEM.2011.24.3.177 인용 PDF KSCI