• Progress in Superconductivity and Cryogenics
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• v.11 no.1
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• pp.5-8
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• 2009

MgO nanodots have been deposited and formed on top of the substrate surface. Mg was sputtered to form the MgO nanodots on the single crystal substrates by rf-sputtering method and followed by heat treatment in the oxygen ambient. The deposition and formation of MgO nanodots have been controlled systematically using the process variables such as substrate temperature, sputtering time, and rf-power. As the substrate temperature increased from the room temperature the density of MgO nanodots decreased. The optimal conditions of MgO nanodots formation using the rf-sputtering was investigated and the maximum density of more than $230/{\mu}m^2$ on single crystal substrates was obtained when the rf-power of 100 watts was applied for 30 seconds at room temperature. The typical size of MgO nanodots was identified to be <160 nm(diameter) and 4-30nm (height) by atomic force microscopy. The modulated surface morphology was examined through surface images and cross-section analysis and discussed for the artificial pinning sites in the superconducting films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.300-300
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• 2010

Ceramic capacitor의 에너지내량을 향상시켜 제품의 신뢰성을 높이고자 RF Sputtering을 이용하여 외부전극을 형성하였다. 본 연구에서는 Target의 종류, 증착 시간 및 열처리 유/무에 따른 Ceramic capacitor의 전기적 특성 및 미세구조를 분석하여 최적조건을 확립하였으며, 최적 증착 조건으로 제작한 Ceramic capacitor의 에너지내량을 측정하였다. Target은 Ni target과 Cu target을 사용하였으며, Sputtering 시간은 10, 30, 60분으로 하였다. Sputtering 시간에 따른 Ceramic capacitor의 용량 특성과 손실은 큰 차이가 없었지만, Wire 연결시 Sputtering 시간에 따라 납땜성의 차이가 나타났으며, 증착 시간과 열처리 유/무에 따른 에너지내량의 변화를 확인하였다.

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.17-21
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• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1098-1101
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• 1995

NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.

• Fashion & Textile Research Journal
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• v.8 no.1
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• pp.129-133
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• 2006

To develope a high value-added fiber products which is useful in the human body physiology, the Macban stone was deposited on the PET fabric by sputtering and its effects were investigated. Then, a Macban stone target was prepared for sputtering treatment and treated on the PET fabric by RF sputtering process. After treatment, surface observation by SEM, far-infrared emissivity and emissive power, the fastness to washing and light, bacteriostatic rate, electrostatic, drape stiffness, and breaking strength of PET fabric were investigated. From these investigation, the following conclusions were obtained. 1) The Macban stone was able to deposit on the PET fabric, by the RF sputtering treatment which is eco-friendly dry textile finishing. 2) The far-infrared emissivity and emissive power of sputtered PET fabrics were increased. 3) When PET fabric was treated by sputtering with Macban stone, the amount of deposited Macban stone increased with increasing treatment time and it was deposited on the fabric surface firmly. 4) The bacteriostatic rate of sputtered PET fabrics was about 20%. 5) The electrostatic charge of fiber surface was reduced by sputtering. 6) The fastness washing to light of dyed fabric were improved by the deposition of Macban stone, but the breaking strength was not changed by sputtering. 7) The drape stiffness of sputtered PET fabrics increased with increasing treatment time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.49-53
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• 2022

In this study, quantum dot light-emitting diodes (QLEDs) of the optimized EL performance with a radio frequency (RF) sputtered Zn_0.85Mg_0.15O thin film as an electron transport layer (ETL). In typical QLEDs, ZnO nanoparticles (NPs) are widely used materials for ETL layer due to their advantages of high electron mobility, suitable energy level and easy capable of solution processing. However, the instability problem of solution-type ZnO NPs has not yet been resolved. To solve this problem, ZnMgO thin film doped with 15% Mg of ZnO was fabricated by RF sputtering and optimized for the device applied as an ETL. The QLEDs of optimized ZnMgO thin film exhibited a maximum luminance of 15,972 cd/m² and a current efficiency of 7.9 cd/A. Efficient QLEDs using sputtering ZnMgO thin film show the promising results for the future display technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.