• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.327-332
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• 2013

Nickel oxide films using RF sputter was formed on the $SiO_2/Si$ substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about $34.25{\Omega}{\cdot}cm$. And it was reduced to $18.65{\Omega}{\cdot}cm$ according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of $34.25{\Omega}{\cdot}cm$ was $-2.01%/^{\circ}C$. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1083-1087
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• 1999

Microstructures and the gas-sensing characteristics of the $\textrm{SnO}_2$ thin films were studied, which were deposited at various conditions (rf power, sample temperature, $\textrm{O}_2$/Ar ratio) by the rf magnetron sputtering. As a result, six typical microstructures were derived, such as amorphous(A), amorphous mixed with polycrystalline grains (A+P), polycrystalline with random crystalographic orientation (P), fine columnar (FC), coarse columnar (CC) and Zone T (T) with dense fiberous structure. Typically, A, A+ P, and P structures were formed when no $\textrm{O}_2$ was added to the sputter gas, whereas FC, CC, and T structures were obtained when $\textrm{O}_2$ was added. The A structure formed at low rf power and low temperature, the A+P at high rf power and low temperature, and the P at high rf power and high temperature. The FC structure was obtained at low rf power and low temperature. the CC at low rf power and high temperature, and the T at high rf power and low temperature. Results of the gas-sensing test of the sensor chips fabricated from the typical films indicated that the fine columnar microstructure shows the highest sensitivity both at $300^{\circ}C$ and $400^{\circ}C$. It was proposed that this is due to the high specific surface area of the micro-columns.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.1
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• pp.39-44
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• 2020

BaTiO₃ thin films was deposited on the slide glass by RF sputter. We have investigated the optical properties of BaTiO₃ film after corona poling process. The transmission characteristics was very good over 80% in visible region and second order nonlinear optical coefficient depends on the poling conditions. The nonlinear optical coefficient of poled BaTiO₃ films was about 1.15pm/V. The relaxation of second order nonlinear optical was remained around 60% of the initial value for a long time. In addition we have observed the green light generation from BaTiO₃ films.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.125.1-125.1
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• 2015

산업 자동화기술이 발달함에 따라 다양한 용도의 부품개발과 산업 장비들의 부품에 대한 수요가 날로 증가하게 되어 산업이 발달하게 된 반면, 장비의 성능을 저하시키는 마모에 대한 문제점이 제기되고 있다. 이에 대한 해결책으로 내열성 및 내마모성을 가지는 박막코팅기술이 요구되고 있다. 특히, Alumina (Al2O3)와 Zirconia (ZrO2)는 내식성과 내열성, 내마모성의 우수한 특성을 지닌 재료이며, 이들을 기어, 베어링, 실린더 등 각종 기계의 부품에 코팅하여 내마모성을 가지게 한다. 본 실험에서는 Al2O3 : ZrO2 = 50 : 50 wt% 의 비율로 혼합한 target이 사용되었다. 그리고 Al2O3-ZrO2 target을 사용하여 RF-magnetron sputtering 방법으로 박막을 제작 하였다. sputter시에 power를 20 W에서 80 W까지 변화를 주었다. AFM, SEM, XRD를 통하여 알루미늄 기판위에 증착된 Al2O3-ZrO2 박막의 구조적 특성을 알아보았으며, 내마모성 테스트 장비를 통하여 박막의 마찰마모 특성에 대하여 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.80-85
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• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.65-69
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• 2011

The $Tio_2$ films were prepared on glass, silicon and quartz substrate at different temperature by radio frequency reactive magnetron sputtering under different flow ratios of Ar and O2 gases. The films were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-VIS spectrophotometer. Only the anatase phase was observed in films and their diffaction peaks increased with temprature of substrate. The size of crystallites decreased with higher concentration of oxygen. Refractive index and optical absorption of thin films decreased with higher concentration of oxygen. The thin films which have good transmittance spectra and smooth surface, deposited in the sputtering ambient with 10 % of $O_2$ at the temperature from $400{\circ}C$ to $300{\circ}C$.