• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.13-13
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• 2014

그래핀은 높은 열전도도, 이동도, 물리적 강도, 화학적 안정성을 갖는 물질로써 가장 활발하게 연구가 진행되고 있는 소재이다. 하지만, 높은 품질의 그래핀을 생산하기 위한 Chemical Vapor Deposition(CVD) 그래핀 제조 방법은 높은 공정단가와 낮은 수율 문제로 적용에 어려움을 겪고 있다. 본 연구에서는 초고순도 그래핀 플레이크를 RF thermal plasma를 이용하여 제조함으로써 이러한 문제점을 해결하고자 한다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.31.2-31
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• 2001

A real-time control strategy is presented for plasma control Rather than in-situ plasma variables, this is based on realtime measurements of two electrical positions that correspond to two match motors. Using the rf match monitor system, the positions were collected. The process of impedance matching was identified with variations in process factors, including rf power, pressure, and O$_2$ flow rate. A state-space model was obtained basing on autoregressive moving average model. For this model, a linear quadratic regulator was designed and applied. Simulation results revealed that match positions could accurately be regulated to follow certain positions arbitrarily chosen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• 전기학회논문지
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• 제57권5호
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• pp.816-820
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• 2008

The RF inductive discharge of inductively couples plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. Although most practical ICPs operate at 13.56 [MHz] and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of RF matching systems and RF generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, We discussed simulation and experimental results when changing ferrite position in antenna.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.566-571
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• 2004

Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.79-82
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• 2004

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제35회 추계학술대회논문집
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• pp.784-785
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• 2010

전북대학교 고온플라즈마 응용연구센터 구축사업단에서는 MW급 초음속 플라즈마 풍동을 구축하고 있다. 구축되는 장비는 0.4MW/2.4MW급 Huels형 DC 플라즈마 장치 및 60kW/200kW급 RF 플라즈마 장치 등으로 구성되며 이러한 장비를 지원하는 공통지원설비가 별도로 구축되게 된다. 공통지원설비는 플라즈마 풍동을 구동하기 위한 수변전설비 및 가스공급설비, 냉각수공급설비, NOx 제거용 후처리 설비, 예비전원설비 등으로 구성되어 있다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권3호
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• pp.133-136
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• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.147-149
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of spectrum as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 100 [mTorr] and the RF power was varied from 10 [W] to 120 [W]. It was found that the intensity of wavelength tends to be decreased when argon pressure is increased, and the intensity of wavelength is increased as RF power is increased.