• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.56 no.3
• /
• pp.117-122
• /
• 2007

In this paper, we described a design and implementation of a sensor node for environmental monitoring. The main focus of design for sensor nodes is to isolate MCU for treating sensors from the RF module for considering various communication environment. The second is to make the interface between MCU and varity of sensor. In addition, we choose a narrow band communication module, cc1020, for the admittance of Korea government communication law. We also use a uC/OS-II as an operating system which is famous for 8bit MCUs. We showed that the communication performance is sufficient to use the communication module in a out-door environment through several experiments in that it is possible to transmit between 100m distance through experiments in a mountain.

• Korean Journal of Applied Biomechanics
• /
• v.16 no.2
• /
• pp.9-19
• /
• 2006

The purpose of this study was to analyze the kinematic variables of the lower limbs joints and the muscle activity for lower limbs during the level and downhill running. The subjects were 6 males of twenties and required to run on the level and downhill which was -7% grade treadmill at 8.3km/h. The running performances were filmed by high speed video camera and EMG signal was gained by ME3000P8 Measurement Unit. Rectus femoris(RF), Vastus lateralis(VL), Gluteus medius(GLU), Biceps femoris(BF), gastrocnemius medial head(GM), gastrocnemius lateral head(GL), Soleus(SO), Tibialis anterior(TA) were selected. The result of this study were as follows: 1. Ankle, knee, hip joint in downhill running showed less movement than the level running but, no significant difference. 2. VL and BF during the support phase in downhill running showed Iess muscle activity than the level running. but RF showed the opposite result. 3. GM, GL, SO adn TA during the supports phase in downhill running showed less muscle activity than the level running.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.4
• /
• pp.551-561
• /
• 2001

In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.442-443
• /
• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• Analytical Science and Technology
• /
• v.16 no.6
• /
• pp.488-498
• /
• 2003

By LC/MS/MS, the analytical method of sildenafil and its analogues (homosildenafil, vardenafil and tadalafil) used as used medical treatment of impotence was established. electrosprary ionization (ESI) and atmospheric pressure chemical ionization (APCI) as a ionization method were applied. Several parameter were varied and the sensitivity and reproducibility were compared. In LC/ESI-MS method, capillary voltage, cone voltage, extractor, entrance and RF lens to create appropriate productr ions for multiple reaction monitoring (MRM) were variable parameter, but the formation of the other product ions except the precursor ion could not detect. And the value of entrance, collision energy, exit, corona voltage, cone voltage, extractor, RF lens, cone gas, and desolvation gas in APCI mode were varied, only the creation pattern of fragment ions by the change of RF lens value were detected, and the limit of detection was decreased due to the increase of S/N. Ten millimole ammonium formate (pH 4.8):acetonitrile=70:30 by isocratic elution in HPLC system was shown the maximum sensitivity in MS, the detection limit of sildenafil, homosildenafil, vardenafil and tadalafil obtained by ESI-MRM were 0.10, 0.025, 0.025, and $0.25{\mu}g/mL$ at S/N>5, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.145-146
• /
• 2006

The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.

• Korean Journal of Environmental Biology
• /
• v.40 no.4
• /
• pp.550-555
• /
• 2022

Perilla plant is a special crop that is used as oilseed and food in Korea. Root lesion nematodes have caused great damage to perilla plants, so for effective management of root lesion nematodes, it is necessary to understand their ecology in perilla. In this study, we investigated the effect of temperature in the development of Pratylenchus penetrans (Pp) and Pratylenchus vulnus (Pv) when the nematodes infected the perilla plant. To estimate the effect of temperature, we assessed the reproduction factor (RF); final population/initial population(Pf/Pi) of these two nematode species. We used perilla plants as inoculated hosts and investigated the density of nematodes at 10 weeks after inoculation. As a result, the RF of Pp was highest at 20℃ (0.41 (1st test), 2.2 (2nd test)) followed by 25, 30, and 15℃. The RF of Pv was highest at 30℃(9.84 (1st test), 31.39 (2nd test)), followed by 25, 20, and 15℃. Comparing the RF by temperature between Pp and Pv, Pv was higher than Pp at all temperatures used in the test. This study showed the optimal development temperature of Pp was 20-25℃ and Pv was 30℃, respectively.

• Horticultural Science & Technology
• /
• v.30 no.1
• /
• pp.73-78
• /
• 2012

KC00256, KC00406, KC00462, KC00463, KC00820, and KC00821, the genetic resources that have previously been reported as moderately resistant to Phytophthora capsici, as well as the line KC01322, a new source of moderate resistance introduced from Laos, were tested against two strains (Pc003 and Pc005) of P. capsici. We also determined the nuclear restorer genotypes of these lines, in regards to their interaction with cytoplasmic male sterility, through crossing the resources with cytoplasmic male sterile Punggok-A (Srfrf) and determining the fertility of the $F_1$ hybrids. The studied lines exhibited a low level of resistance to both the strains of P. capsici compared to highly resistant CM334, but their response was fairly consistent for both P. capsici strains. KC00406, KC00462, KC00463, and KC01322 produced stable, male fertile $F_1$ plants indicating that they are restorers with genotype N(S)RfRf. KC00821 produced male sterile $F_1$ plants and was identified as a maintainer with genotype Nrfrf. The $F_1$ plants of the KC00820 cross, however, set a few male fertile flowers in the greenhouse at seedling stage, then became male sterile after being transplanted to the plastic greenhouse soil in May and remained so to the end of the growing season. Therefore, KC00820 is an unstable maintainer with genotype Nrfrf. The moderate resistance exhibited by these genetic resources may be integrated into breeding programs aimed at promoting higher levels resistance via recurrent selection or hybridization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.263-266
• /
• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.481-485
• /
• 2003

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.