• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.1-8
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• 2007

The DC characteristics of GaAs Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.6
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• pp.64-72
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• 2009

In this paper, a high efficiency 2.45 GHz rectenna with a microstrip patch antenna and a dual-mode band-pass filter in which the 2nd and 3rd harmonics are suppressed, is presented. From the experimental results, the 2.45GHz rectenna using 3rd harmonic suppressed dual-mode BPF shows the conversion efficiency of 41.6% with incident power density of 0.3 mW/cm2 and the received power of 1.66 mW. This result shows high conversion efficiency because the received power of this rectenna is lower than other rectennas to be compared with. This rectenna can be applied to the WPT (Wireless Power Transmission) field for energy harvesting. Also, it is expected to be used to provide the stand-by power for the low power devices for USN, and wireless power transfer in sensor application of MEMS devices.

• Journal of Korea Society of Industrial Information Systems
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• v.16 no.4
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• pp.1-7
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• 2011

In this paper, we design rectifing circuits at 910MHz, which is used for passive RFID system, for wireless power transmission system by using two types of schottkey diodes HSMS_2822 and HSMS 2852, and the RF-DC conversion efficiencies for the curcuits are compared and analyzed in terms of input power and load resistance. When the input power is -20 to 17dBm, the conversion efficiency for HSMS_2852 is larger than in case of HSMS_2822. The output voltage and current at the load of the fabricated rectifying circuit are measured through a dipole antenna when input power is transmitted by a RFID reader and the diatance varies. The measured ouput volatge and current for the distance of 50cm are 2.5V and 5.75mA.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1574-1579
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• 2016

This paper presents a self-powered sensor-node scheme using a RF wireless power harvesting techniques for improve drone time of flight. Sensor-node that is proposed is turned when two conditions satisfy: The one is input RF ID data from master-node should be same with sensor-node's ID, and the other one is RF wireless power harvesting system is turned on by hysteresis switch. In this paper, master-node's output is 26 dBm at 263 MHz. Maximum RF to DC power conversion efficiency is about 55% at 4-6 dBm input power condition (2 meter from master-node). The maximum RF wireless power harvesting range is about 13 meter form master-node. And power consumption of the sensor-node's load elements such as transmitter, MCU and temperature sensors is approximately average 15 mA at 5.0 V for 10 msec.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.1
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• pp.45-52
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• 2009

In this paper, a new rectenna is presented for the wireless transmission of microwave power using dipole antenna (Quasi Yagi effect) and rectifier of CPS resonator structure. The dipole antenna with CPW feedline has high peak gain than a general dipole antenna. A ground plane of CPW is used to reflect a dipole as a Yagi antenna. Therefore, the new rectenna receives the RF power better than the one using general dipole. A RF-to-DC conversion efficiency of 61 % using a 1.4 $k{\Omega}$ load resistor is obtained at 5.8 GHz.

• Journal of Korea Society of Digital Industry and Information Management
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• v.4 no.4
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• pp.21-29
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• 2008

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.119-125
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• 2022

The power supply for the anti-aircraft radar homing sensor should allow the system to receive power quickly and stably without the influence of noise. For this purpose, DC-DC converters are widely used for reliable power conversion. Also, switching of DC-DC converters Frequency noise should not cause false alarms and ghosts that may affect the detection and tracking performance of the system, and it should have a check function that can monitor power in real time while the homing sensor is operating. In order to apply to anti-aircraft radar homing sensor, we developed a multi-output switching power supply with maximum output 𐩒𐩒𐩒 W, efficiency 80% or more (@100% load), output power by receiving 28VDC input, and power supply to achieve more than 80% efficiency. A DC-DC converter was applied to this large output, and the multi-output flyback method was applied to the rest of the low-power output.

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.817-823
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• 2011

This paper introduces an efficient voltage multiplier circuit for improved voltage gain and power efficiency of radio frequency identification (RFID) tags. The multiplier is fully integratable and takes advantage of both passive and active circuits to reduce the required input power while yielding the desired DC voltage. A six-stage voltage multiplier and an ultralow power voltage regulator are designed in a 0.13 ${\mu}m$ complementary metal-oxide semiconductor process for 2.45 GHz RFID applications. The minimum required input power for a 1.2 V supply voltage in the case of a 50 ${\Omega}$ antenna is -20.45 dBm. The efficiency is 15.95% for a 1 $M{\Omega}$ load. The regulator consumes 129 nW DC power and maintains the reference voltage in a 1.1% range with $V_{dd}$ varying from 0.8 to 2 V. The power supply noise rejection of the regulator is 42 dB near a 2.45 GHz frequency and performs better than -32 dB from 100 Hz to 10 GHz frequencies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.805-808
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• 2011

This paper presents a design of high-efficiency and high-power class E power transmitter. The transmitter is composed of 300 Watt class E power amplifier and AC-DC converter. The AC-DC converter converts 220 V and 60 Hz AC to a 290 V DC. The generated DC voltage is directly applied to a bias of the class E power amplifier. Because the converter does not have DC-DC converter unit, it has very high conversion efficiency of about 98.03 %. To minimize the loss at the output of the power amplifier, high-Q inductor was implemented and deployed to the output resonant circuit. As a result, the 13.56 MHz class E power amplifier has a high power-added efficiency of 84.2 % at the peak output power of 323.6 W. The overall efficiency of class E power transmitter, including the AC-DC converter, is as high as 82.87 %.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.35-41
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• 2013

An efficient multi-stage rectifier for wireless power transfer in deep implant medical devices is implemented using $0.18-{\mu}m$ CMOS technology. The presented three-stage rectifier employs a cross-coupled topology to boost a small input AC signal from the external device to produce a 1.2-1.5 V output DC signal for the implant device. The designed rectifier achieves a maximum measured power conversion efficiency of 70% at 13.56 MHz under the conditions of a low 0.6-Vpp RF input signal with a $10-k{\Omega}$ output load resistance.