• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.868-871
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• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.182-186
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• 1997

Diamond-like carbon(DLC) films were deposited on silicon substreates by using an RF plasmaassisted CVD apparatus; the effects of deposition conditions such as CH4 gas pressure and substrate bias voltage on DLC film friction and wear were examined in both friction and scratch tests. In friction tests critical loads at which the friction coefficient increases abruptly depend on substrate bias voltages: critical loads deposited at a bias voltage of -100 V exceed those deposited at other bias voltages. Critical loads are correlated with DLC film hydrogen content. Critical DLC film loads in scratch tests depended considerably less than in friction tests. The friction coefficient of DLC films depends on neither substrate bias voltage nor CH4 gas pressure.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1475-1480
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• 2004

Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1862-1864
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• 2005

Carbon nanotubes [CNTs] are grown on TiN-coated Si substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Pre-treatment of Ni catalysts has been performed using an RF magnetron sputtering system. Structural properties and field-emission characteristics of the CNTs grown are analyzed in terms of the RF power applied and the treatment time used in the pre-treatment process. The characterization using various techniques, such as FE-SEM, AFM, and Raman spectroscopy, show that the physical dimension as well as the crystal quality of CNTs are changed by pre-treatment of Ni catalysts. It is also seen that Ni catalysts with proper grain size and uniform surface roughness may produce much better electron emission. The physical reason for all the measured data obtained are discussed to establish the relationship between the structural property and the electron emission characteristic of CNTs.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1530-1533
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source is under operation for 2.5-GeV electron linear accelerator in Pohang Light Source(PLS) linac. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are required for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider(CVD) unit is intended for the measurement of beam voltage of 400 kV generated from the pulsed klystron-modulator system. Main parameter to determine the standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will discuss the analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance and oil temperature variation.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.67-72
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• 2013

Temperature is a critical parameter in yield improvement for wafer manufacturing. In chemical vapor deposition (CVD) equipment, crack defect in ceramic heater leads to yield reduction, however, there is no suitable ceramic heater fault detection system for conventional CVD equipment. This paper proposes a short-time zero-crossing rate based fault detection method for the ceramic heater in CVD equipment. The proposed method measures the output signal ($V_{pp}$) of RF filter and extracts the zero-crossing rate (ZCR) as feature vector. The extracted feature vectors have a discriminant power and Gaussian mixture model (GMM) based fault detection method can detect fault in ceramic heater. Experimental results, carried out by measured signals provided by a CVD equipment manufacturer, indicate that the proposed method detects effectively faults in various process conditions.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.786-788
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• 1998

Synthetic diamond films were deposited on pretreated silicon substrate in activated gas phase using RF plasma-assisted CVD. We investigated the influence of $O_2$ gas on facets of diamond crystal. In $H_2-CH_4-O_2$ gas mixture, the increase of oxygen concentration lead to well-faceted diamond particles and increasing crystallinity of diamond films. The deposited diamond films were analyzed by SEM, XRD, Raman spectroscopy.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.10
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• pp.1037-1043
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• 1990

Diamond thin films were synthesized from the mixed gases of methane and hydrogen on silicon substrates by RF plasma chemical vapor deposition and deposited films were investigated by SEM, X-ray diffractometry and Raman spectroscopy. It is found that high quality diamond-like carbon films were successfully synthesized by PECVD under the deposition condition of 1-10 vol% of methane concentration, 0.15-0.4torr of reactor pressure, 500W of RF power, and 5-20hr of reaction time. Especially, cubo-octahedral diamond-like carbon particles were synthesized by employing 1.0 vol % of methane concentration and 0.4torr of the reactor pressure.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.648-653
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• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.