• Proceedings of the KIEE Conference
• /
• 1991.11a
• /
• pp.265-268
• /
• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.102-105
• /
• 1992

Using RF plasma CVD the diamond particles and films were deposited on Si and quartz substrate from $CH_4$-$H_2$ mixed gas. The temperature of substrate was uniformly maintained by inserting matal plate between substrate and substrate holder. As a result, the deposited diamond particles were mainly twins. The deposited diamond films were identified by SEM, XRD and Raman spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.7
• /
• pp.552-556
• /
• 1998

Diamond thin films were deposited on Si substrate using $CH_4 and H_2$mixed gas by RF plasma CVD. Prior to deposition, the substrate surface was mechanically scratched with the diamond paste of $3{\mu}m$ to improve the density of nucleation sites. The microstructure of diamond films deposited with methane(0.5%~2%) at the reaction pressure ranging from 20 torr to 50torrr were studied by a scanning electron microscope. It was observed in the deposited diamond films that the nucleation density decreased and crystallinity increased with decreasing the methane concentration. However, the nucleation density and crystallinity were decreased with decreasing the process pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.2
• /
• pp.56-59
• /
• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (PECVD). In the present work, we have investigated the effect of the If. power on the properties, such as optical band gap, transmittance and crystallinity, of crystalline silicon thin films. Raman data show that the material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and 520cm$^{-1}$. X-ray spectra confirmed of crystallites with (111) orientation at 300w The transmittance of thin films was measured by UV-VIS spectrophotometer. In addition, Si-H chemical bondings were studied by Fourier Transform Infrared (FT-IR) spectroscopy.

• Electrical & Electronic Materials
• /
• v.11 no.11
• /
• pp.161-164
• /
• 1998

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.79-79
• /
• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1999.06a
• /
• pp.285-303
• /
• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.13-13
• /
• 2014

그래핀은 높은 열전도도, 이동도, 물리적 강도, 화학적 안정성을 갖는 물질로써 가장 활발하게 연구가 진행되고 있는 소재이다. 하지만, 높은 품질의 그래핀을 생산하기 위한 Chemical Vapor Deposition(CVD) 그래핀 제조 방법은 높은 공정단가와 낮은 수율 문제로 적용에 어려움을 겪고 있다. 본 연구에서는 초고순도 그래핀 플레이크를 RF thermal plasma를 이용하여 제조함으로써 이러한 문제점을 해결하고자 한다.

• Journal of the Korean Vacuum Society
• /
• v.2 no.3
• /
• pp.346-354
• /
• 1993

The diamond particles and films were deposited on Si and qurtz substrate for $CH_4-H_2$ mixed gas by using RF plasma CVD. The temperature of substrate and the thinkness of films deposited on Si substrate were uniformly kept up by inserting metal plate between substrate and substrate holder. On increasing the reaction pressure in the same discharge power, the morphologies of films were changed from well-defind films to micro-crystal or ball-like. When diamond films were deposited on Si substrate from $CH_4-H_2$ mixed gas, we obtained well-defined diamond films at lower concentration than 0.5 vol% of $CH_4/H_2$. The deposited diamond films were indentified by SEM, XRD and Raman spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.3
• /
• pp.299-304
• /
• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe