• Journal of Integrative Natural Science
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• v.7 no.3
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• pp.183-187
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• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.293-300
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• 1999

고주파 마그네트론 스퍼터법을 이용한 YIG(yttrium iron garnet)박막 제조시 기판유형, 기판온도, 스퍼터전력, 스퍼터가스 등의 증착변수와 증착후 열처리 조건이 YIG 박막의 결정성, 화학조성, 미세구조 그리고 자기적 특성에 미치는 영향에 대하여 고찰하였다. 75$0^{\circ}C$ 이상의 온도에서 수행한 증착후 열처리에 의하여 비정질 박막이 결정화되었으며, 특히 GGG(gadolinium gallium garnet)기판 위에 제조된 박막은 강한 (111)우선배향성을 나타냈다. 박막조성은 스퍼터가스 내의 산소분율에 민감하게 영향을 받았으며, 산소분율이 20%인 스퍼터가스를 사용하여 제조된 박막은 Y2.88Fe3.84O12의 조성을 나타내었다. 증착후 열처리 온도가 90$0^{\circ}C$로부터 110$0^{\circ}C$로 증가함에 따라, GGG 기판위의 박막의 표면거칠기는 2.5nm에서 40nm로 증가하였으며, 보자력과 강자성 공명 선폭은 감소하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.206-206
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• 2009

RF Magnetron Sputtering 방법을 통해 ZnS:Mn 박막 형광체를 증착한 다층 TFEL (Thin-Film Electroluminescent) Backlight 소자를 제작하였다. Alumina 기판 위에 Au 전극과 PMN 후막 유전체를 Screen printing 기법으로 층을 형성하였다. 그 위에 MgO 박막 유전체를 E-Beam 장비를 이용하여 증착 후, ZnS:Mn 박막 형광체를 50 W 의 저전력으로 약 8000 ${\AA}$ 두께로 증착하였다. 형광체는 Sputter 증착 시 Sulfur 부족 현상을 보상해주기 위해 ZnS:Mn (0.5%) Target 에 2 at % 의 Sulfur를 첨가하였으며, 상부 전극으로 사용할 ITO 는 DC Magnetron Sputter 를 이용하여 증착하였다. 어닐링 공정은 Air 분위기에서 급속 열처리 장치 (RTA, Rapid Thermal Annealing) 을 이용하여 600 $^{\circ}C$에서 20 분 진행하였다. 이러한 과정들을 통해 저전압 고휘도의 TFEL Backlight 소자를 제조할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.328-331
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• 1995

TiO$_2$thin films for humidity sensors have been deposited by RF magnetron sputter and hygroscopic characteristics were investigated. Grain diameter of thin films were increased and hygroscopic characteristics were good as discharge power. Hygroscopic characteristics of thin films heated for 15 min at 500$^{\circ}C$ were better and more linear than that at 400$^{\circ}C$ and were unchanged as Ar flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.145.1-145.1
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• 2014

변형된 end-Hall type의 이온 소스를 사용하여 이온 소스의 형태에 따라 달라지는 이온 빔의 변화를 측정하였다. 이온 소스 cathode의 wehnelt mask를 세 가지 종류로 제작하였으며, 생성된 이온 빔을 이용하여 Al이 sputter 방식으로 증착된 유리 기판을 etching 하였다. 실험 결과 wehnelt mask의 모양에 따라 focus, broad, strate의 형태로 이온 빔이 생성되는 것을 확인하였다. Al이 증착된 유리 기판의 제작을 위하여 Al target을 사용하여 RF power로 150 W, 2분간 sputtering을 하였고, 이온 소스와 기판사이의 거리를 1 cm씩 증가시켜가며 이온 빔을 2,500 V로 3분간 유리 기판을 etching한 후, 유리 기판이 etching된 모양을 통해 이온 빔의 형태를 분석하였다. 본 연구를 위하여 sputtering과 이온 빔 처리가 가능한 챔버를 제작하였으며, scroll pump와 turbo molecular pump를 사용하였다. Base pressure $1.5{\times}10^{-6}Torr$에서 실험이 진행되었고, 불활성 기체 Ar을 사용하였다. Ar 기체를 주입시 pressure는 $2.6{\times}10^{-3}Torr$였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.63-64
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• 2005

CdS thin films were fabricated by rf magnetron sputter technique, and annealed in tube furnace using vacuum evaporated $CdCl_2$ layer, In addition, effects of the thickness of $CdCl_2$ layer and the annealing temperature on structural and optical properties of CdS films were investigated. The heat treatment process was carried out by heating the sample in air at $350-500^{\circ}C$ for 20 minute.

• Journal of Surface Science and Engineering
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• v.25 no.2
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• pp.90-96
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• 1992

Thed effects of sputter gas pressure and substrate surface micro-roughness on the microstructure and surface topography have been investigated in the Cu thin films sputter deposited onto polyimide substrates. The surface roughness of polyimide was controlled by oxygen rf plasma treatment. In the Cu film deposited at the pressure of 5 mtorr, the surface is smooth and the columnar structure is not visible regardless of polyimide surface more open boundaries. The polyimide surface roughness enhances these effects, These phenomena can be explained in therm of atomic shadowing effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.17-20
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• 1994

PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.7
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• pp.8-13
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• 2009

Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.