• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.153-156
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T$=1.5V, while the simulated value was 1.0GHz at $V_T$=1.5V. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.503-504
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• 2006

This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.877-882
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• 2016

In this paper, a novel CMOS high Q factor 2-port active inductor has been proposed. The proposed circuit is designed by cascading basic gyrator-C structural active inductors and attaching the feedback LC resonance circuit. This LC resonator can compensate parasitic capacitance of transistor and can improve Q factor over wide frequency range. The proposed circuit was fabricated and simulated using 65 nm Samsung RF CMOS process. The fabricated circuit shows inductance of above 2 nH and Q factor higher than 40 in the frequency range of 1~6 GHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.104-109
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• 2012

In this paper, we propose a way to improve the quality of L-band wireless communication from unfriendly influential factors lying in the neighboring RF bands. The UHF-band system has resonator components and they generate harmonics as the spurious in the L-band. Therefore, a metamaterial CRLH bandpass filter is designed for the purpose of system miniaturization and smaller insertion loss, and its spurious phenomenon is observed in the frequency domain. And its harmonics in the L-band are suppressed by a compact bandstop filter whose equivalent circuit is newly developed. The design methodology is validated by the equivalent circuit to be compared with commercial full-wave EM software simulations, where the spurious is dropped by 20dB. Also, the advantage of the proposed design is presented by the comparison where our filter is much smaller than the conventional parallel edge coupled filter by over 50%, with excellent harmonic suppression.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.325-328
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• 2020

This paper demonstrated a voltage-controlled oscillator (VCO) using cost-effective (1-poly 6-metal) mixed signal standard CMOS process. To have the high-quality factor inductor in LC resonator with thin metal thickness, patterned-ground shields (PGS) was adopted under the spiral to effectively reduce the ac current of low resistive Si substrate. And, because of thin top-metal compared with that of RF option (2 ㎛), we make electrically connect between the top metal (M6) and the next metal (M5) by great number of via array along the metal traces. The circuit operated from 2.48 GHz to 2.62 GHz tuned by accumulation-mode varactor device. And the measured phase noise of LC VCO has -123.7 dBc/Hz at 1MHz offset at 2.62 GHz and the dc-power consumption shows 2.07 mW with 1.8V supply voltage, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.89-94
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• 2006

A compact microstrip band-selective filter for ultra-wideband(UWB) radio system is proposed. The filter combines the traditional short-circuited stub highpass filter and coupled resonator band-stop filter on both sides of the mitered 50-ohm microstrip line. To realize the pseudo-highpass filtering characteristic over UWB frequency band(3.1 GHz to 10.6 GHz), a distributed highpass filter scheme is adopted. Three coupled resonators are utilized to obtain the band stop function at the desired frequency band. By meandering the coupled resonators, there is $29\;\%$ size reduction in footprint compared to the traditional band-stop filter using L-shaped resonators. The measured results show that the filter has a wide passband of $146.7\;\%$(2.1 GHz to 10.15 GHz) with low insertion loss and the stop band of $10.04\;\%$(5.2 GHz to 5.75 GHz) for 3-dB bandwidth. The measured group delay is less than 0.7 ns within the passband except the rejection band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.300-305
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• 2012

In this paper, a miniaturized bow-tie monopole UWB antenna with band rejection characteristic is proposed. To miniaturize the proposed antenna, a perfect magnetic wall(PMW) condition is applied to primitive bow-tie monopole antenna. An uneven ground patch, a tapered feeding structure and a edge-chopped main patch are adapted for impedance matching. A quater-lambda slot resonator is inserted at main patch to prevent interference in UWB band from another band. The proposed antenna is fabricated on Taconic RF60-A substrate with relative permittivity of 6.15. The size of the proposed antenna is $30.0{\times}39.7mm^2$, which is only 45 % of the conventional bow-tie monopole antenna. The proposed antenna covers full UWB band with return losses less than -10 dB and has band stop characteristic in 5 GHz WLAN band. The maximum gains are within -1.0~5.0 dBi, the group delay variations are within 1.0 ns and the radiation patterns show directivity characteristics in x-y plane.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.49-60
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• 2017

In this paper, we presented the result of the study on high-power handling capability of the X-band circular waveguide cavity filter configured at the output of high power amplifier(120 W) for geostationary satellites. The dual mode circular waveguide cavity filter with 6th order is selected and the physical model of the filter is designed after determination of the size of resonator from mode chart. Multipactor margin analysis is performed by the SEM method and the VMF method. The result shows that the VMF method predicts lower multipactor breakdown thresholds than the SEM method. Evaluating the multipactor margin obtained by the VMF method to ECSS criteria, we could decide to perform multipactor test. The multipactor test conducted in ESA facility shows that multipactor did not occur even until the RF power increased up to 540 W. In consequence, by both analysis and test, we could verify that the X-band circular waveguide cavity filter has the sufficient high-power handling capability to operate on orbit.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.79-85
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• 1999

In this paper, the resistive mixer for 5.86Hz wireless LAN, main part receiving system, was designed and implemented. The noise characteristics and the linearity in the base band was superior. For the use of local oscillator of mixer, dielectric resonator of stable output and temperature characteristics was designed. For the electrical tuning by the capacitance variation of varactor diode, the microstrip line and magnetic coupling characteristics of the dielectric resonance was used. It was obtained that gain of the proposed resistive mixer containing the RF cable loss, is -13.8dB, the conversion loss of frequency converter is -12 dB, and the output power of local oscillator is 1.67 dBm.