• 제목/요약/키워드: RF requirements

검색결과 114건 처리시간 0.03초

Application of GaAs Discrete p-HEMTs in Low Cost Phase Shifters and QPSK Modulators

  • Kamenopolsky, Stanimir D.
    • ETRI Journal
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    • 제26권4호
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    • pp.307-314
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    • 2004
  • The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.

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무전극 형광램프용 안테나의 자속밀도 변화에 따른 발광 특성 (Emission characteristic along a magnetic flux density change of Antenna for Electrodeless Fluorescent Lamp)

  • 허인성;김남군;최용성;이종찬;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.644-647
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    • 2004
  • Recently, the environmental problem has received considerable attention. so, many lamps have been developing for environmental requirement and energy efficiency, also, at glow discharge lamp researchers try to reduce energy spending that is power saving lamp. this kind requirement agree with strong points of electrodeless fluorescent lamp has received to now lighting sauce. In this paper, at the research and development of Electrodeless Fluorescent Lamp phase, according to ferrite C.F.D(Computational Fluid Dynamics) Simulation and lamp brightness character are measured to find optimization design requirements of RF antenna which is impotent for emission of lamp.

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웹기반 쾌속조형물후가공 선정시스템 개발에 관한 연구 (A Study on Determining Post-machining System for RP parts with Web-based Interface Tool)

  • 이상호;안대건;양화준;장태식;이일엽;정해도;이석희
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.1257-1260
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    • 2003
  • Rapid Prototyping technology has many advantages such as Rapid Tooling. However, Using the RT technique is limited by the poor surface quality of the RP part. Thus, additional post-machining is required for improving the surface roughness by the sanding, grinding and polishing etc. But, these traditional finishing techniques are time and labor cost consuming. Hence, improving and formulation the finishing technique is inevitably necessary for the RF part. A new post-machining methodology for RP part is presented by the SLS part is used for automobile components in this research. Also, a web based interface tool that user requirements are rapidly ordered for post-machining RP part is developed.

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Advantages of Acoustic Leak Detection System Development for KALIMER Steam Generators

  • Kim, Tae-Joon;Valery S. Yughay;Hwang, Sung-Tai;Chai, Jeong-Kyung;Choi, Jong-Hyeun
    • Nuclear Engineering and Technology
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    • 제33권4호
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    • pp.423-440
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    • 2001
  • For sodium cooling liquid metal reactors during the last 25 years, it was most important to verify the safety of the steam generator, which absolutely requires a water leak detection system with fine sensitivity and response. This study describes the structure and leak classification of the HAMMER (Korea Advanced Liquid Metal Reactor) steam generator, compared with other classifications, and explains the effects of leak development. The requirements and experimental situations for the development of the KALIMER acoustic leak detection system (KADS) which detects micro leaks, not intermediate leaks, are introduced. We proposed four frequency bands, 1∼8kHz, 8∼20kHz, 20∼40kHz and 40∼200kHz, split effectively for analyzing the detected acoustic leak signals obtained from the sodium-water reaction model or water model in the mock-up system.

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이차원 자세 측정용 GPS 수신기 설계 (Design of a Two-dimensional Attitude Determining GPS Receiver)

  • 손석보;박찬식;이상정
    • 한국군사과학기술학회지
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    • 제3권2호
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    • pp.131-139
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    • 2000
  • A design of CPS attitude determination system is described in this paper. The designed system is a low cost high precision 24 channel single frequency GPS(Global Positioning System) receiver which provides a precise absolute heading and pitch (or roll) as well as a position. It uses commercial chip-set and consists of two RF parts, two signal-tracking parts, a processor, memory parts and I/Os. In order to determine precise attitude, accurate carrier phase measurements and an efficient integer ambiguity resolution method are required. To meet these requirements, a PLL (Phase Locked Loops) is designed, and an algorithm called ARCE (Ambiguity Resolution with Constraint Equation) is adopted. The hardware and software structure of the system will be described, and the performance evaluated under various conditions will be presented. The test results will promise that more reliable navigation system be possible because the system provides all navigational information such as position, velocity, time and attitude.

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Analytical Coexistence Benchmark for Assessing the Utmost Interference Tolerated by IEEE 802.20

  • Abdulla, Mouhamed;Shayan, Yousef R.
    • Journal of Information Processing Systems
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    • 제7권1호
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    • pp.43-52
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    • 2011
  • Whether it is crosstalk, harmonics, or in-band operation of wireless technologies, interference between a reference system and a host of offenders is virtually unavoidable. In past contributions, a benchmark has been established and considered for coexistence analysis with a number of technologies including FWA, UMTS, and WiMAX. However, the previously presented model does not take into account the mobility factor of the reference node in addition to a number of interdependent requirements regarding the link direction, channel state, data rate and system factors; hence limiting its applicability for the MBWA (IEEE 802.20) standard. Thus, over diverse modes, in this correspondence we analytically derived the greatest aggregate interference level tolerated for high-fidelity transmission tailored specifically for the MBWA standard. Our results, in the form of benchmark indicators, should be of particular interest to peers analyzing and researching RF coexistence scenarios with this new protocol.

평판 표시기를 위한 수소화된 비정질실리콘 박막트랜지스터의 제작 (Fabrication of Hydrogenated Amorphous Silicon Thin-Film Transistors for Flat Panel Display)

  • 김남덕;김충기;최광수;장진;이주천
    • 대한전자공학회논문지
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    • 제24권3호
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    • pp.453-458
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    • 1987
  • Amorphous silicon thin-film transtors (TFT's) have been designed and fabricated on glass substrates. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane(SiH4) in hydorgen ambient by rf glow discharge method. Amorphous silicon nitride(a-Si:H) has been chosen as the gate dielectric material. It has been prepared by decomposing the mixed gas of silane(SiH4) and ammonia(NH3). The electrical properties and performance characteristics of the thin-film transistrs have been measured and compared with the requirements for the switching elements in liquid crystal flat panel display. The results show that liquid crystal flat panel displays can be fabricated using the thin-film transistors described in this paper.

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Sputtered Al-Doped ZnO Layers for Cu2ZnSnS4 Thin Film Solar Cells

  • Lee, Kee Doo;Oh, Lee Seul;Seo, Se-Won;Kim, Dong Hwan;Kim, Jin Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.688-688
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    • 2013
  • Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98:2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

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High mobility indium free amorphous oxide based thin film transistors

  • Fortunato, E.;Pereira, L.;Barquinha, P.;Do Rego, A. Botelho;Goncalves, G.;Vila, A.;Morante, J.;Martins, R.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1199-1202
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    • 2008
  • High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures ($200^{\circ}C$, $250^{\circ}C$ and $300^{\circ}C$) was evaluated and compared with two series of TFTs produced at room temperature and $150^{\circ}C$ during the channel deposition. From the results it was observed that the effect of pos annealing is crucial for both series of TFTs either for stability as well as for improving the electrical characteristics. The a-GSZO TFTs operate in the enhancement mode (n-type), present a high saturation mobility of $24.6\;cm^2/Vs$, a subthreshold gate swing voltage of 0.38 V/decade, a turn-on voltage of -0.5 V, a threshold voltage of 4.6 V and an $I_{ON}/I_{OFF}$ ratio of $8{\times}10^7$, satisfying all the requirements to be used in active-matrix backplane.

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eHSPA 규격을 만족하는 FPGA모뎀 플랫폼 설계 및 검증기법 (FPGA Modem Platform Design for eHSPA and Its Regularized Verification Methodology)

  • 권현일;김경호;이충용
    • 대한전자공학회논문지SD
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    • 제46권2호
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    • pp.24-30
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    • 2009
  • 본 논문에서는 3GPP(Third Generation Partnership Project) Release 7 eHSPA(High Speed Packet Access for Evolution) UE(User Equipment) FDD(Frequency Division Duplex) 규격을 만족하는 단말 모뎀의 FPGA(Field Programmable Gate Array) 플랫폼 설계 및 이를 기반으로 한 효율적인 검증 방법에 대해 제안한다. 구현된 FPGA 모뎀 플랫폼은 물리 계층 지원을 위한 모뎀 보드, MCU(Micro Controller Unit)와 DSP(Digital Signal Processor) 코어로 구성되어 모뎀 보드를 제어를 위한 제어 보드, 그리고 RF(Radio Frequency) 및 기타 장비 접속을 위한 주변장치(Peripheral) 보드 등으로 구성된다. 그리고 검증 단계는 하드웨어-소프트웨어 연동 상관 정도에 따라 단순 기능 검증, 시나리오 검증 그리고 호 처리 및 시스템 성능 검증 등으로 규정화하여 진행되었고, 실제 구현적인 측면으로 저 전력 SoC(System On a Chip)를 위한 에뮬레이션 검증 기법도 제안한다.