한국정보디스플레이학회:학술대회논문집
- 2008.10a
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- Pages.1199-1202
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- 2008
High mobility indium free amorphous oxide based thin film transistors
- Fortunato, E. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
- Pereira, L. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
- Barquinha, P. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
- Do Rego, A. Botelho (CQFM, IST, Technical University of Lisbon) ;
- Goncalves, G. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA) ;
- Vila, A. (Department of Electronics, University of Barcelona) ;
- Morante, J. (Department of Electronics, University of Barcelona) ;
- Martins, R. (Department of Materials Science/CENIMAT/I3N, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA)
- Published : 2008.10.13
Abstract
High mobility bottom gate thin film transistors (TFTs) with an amorphous gallium tin zinc oxide (a-GSZO) channel layer have been produced by rf magnetron cosputtering using a gallium zinc oxide (GZO) and tin (Sn) targets. The effect of the post annealing temperatures (