• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 E
• /
• pp.1657-1659
• /
• 1997

Electron temperature and electron density were measured in a radio-frequency inductively coupled plasma (RFICP) using a probe measurements. Measurement was conducted in an argon discharge for pressures from 10 [mTorr] to 40 [mTorr] and input rf power from 100 [W] to 800 [W], Ar flow rate from 5 [sccm] to 30 [sccm], Spatial distribution electron temperature and electron density were measured for discharge with same aspect ratio (R/L=2). Electron temperature and electron density were discovered depending on both pressure and power, Ar flow rate. Electron density was increased with increasing input power and in creasing pressure, increasing Ar flow rate. Radial distribution of the electron density was peaked in the plasma center. Normal distribution of the electron density was peaked in the center between quartz plate and substrate. From these results, We found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.752-758
• /
• 2010

The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• 한국진공학회지
• /
• 제9권4호
• /
• pp.428-435
• /
• 2000

정전 탐침을 이용하여 유도 결합형 반응기에서 발생하는 산소 플라즈마의 음이온 발생 특성을 관찰하였다. 입력전력과 운전압력 조건에 따른 산소 플라즈마에서 electronegative 음이온 플라즈마의 입력전력과 운전압력에 따른 정전 탐침에 흐르는 포화 양 전류 대 포화 음 전류(전자 전류와 음 이온 전류의 합)의 전류 비율과 플라즈마 부유 전위와 플라즈마 전위 차의 변화로부터 음이온 발생 특성관찰을 하였다. 전류비의 증가와 전위차 값의 감소는 입력전력이 증가함에 따라 약 30∼60 mTorr 운전압력 영역에서 나타났으며 이 조건에서 음이온의 발생량이 증가함을 의미하고, 플라즈마내의 이온들은 음이온과 재결합에 의한 손실이 증가하여 플라즈마 밀도가 감소함을 알 수 있었다.

• Applied Science and Convergence Technology
• /
• 제26권6호
• /
• pp.189-194
• /
• 2017

Effects of gas injection scheme and rf driving current configuration in a dual turn inductively coupled plasma (ICP) system were analyzed by 3D numerical simulation using CFD-ACE+. Injected gases from a tunable gas nozzle system (TGN) having 12 horizontal and 12 vertical nozzles showed different paths to the pumping surface. The maximum velocity from the nozzle reached Mach 2.2 with 2.2 Pa of Ar. More than half of the injected gases from the right side of the TGN were found to go to the pump without touching the wafer surface by massless particle tracing method. Gases from the vertical nozzle with 45 degree slanted angle soared up to the hottest region beneath the ceramic lid between the inner and the outer rf turn of the antenna. Under reversed driving current configuration, the highest rf power absorption region were separated into the two inner islands and the four peaked donut region.

• 한국표면공학회지
• /
• 제39권3호
• /
• pp.142-146
• /
• 2006

A novel internal-type linear inductive antenna, which we refer to as a double comb-type antenna, was developed for a large-area plasma source with substrate size of $880\;mm{\times}660\;mm$ ($4^{th}$ generation glass size). In this study, effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas of the order of $3.18{\times}10^{11}\;cm^{-3}$ could be obtained with a pressure of 15 mTorr Ar at an inductive power of 5000 W with good plasma stability. This plasma density is higher than that obtained for the conventional double comb-type antenna, possibly due to the plasma confinement, low rf voltage, resulting in high power transfer efficiency. Also, due to the remarkable reduction in the antenna rf voltage and length, a plasma uniformity of less than 3% could be obtained within a substrate area of $880\;mm{\times}660\;mm$ as rf power increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
• /
• pp.138-140
• /
• 1994

Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The effect of charge of discharge power on growth rate and etching rate of the thin films were studied. The molecular structure of thin films were investigated by FIR and then was discussed in relation to its quality as a resist. In the case of Plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing argon gas and RF power with RIE 80.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.74-74
• /
• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• 한국진공학회지
• /
• 제18권3호
• /
• pp.164-175
• /
• 2009

전산 유체 역학 코드를 사용하여 안테나 내장형 유도 결합 플라즈마 시스템의 가스 유동 특성, 전력 흡수, 전자 온도, 전자 밀도, 화학종의 분포에 대해서 살펴보았다. 복잡한 현실적 3차원 시스템에 대한 안정한 수치해의 도출을 위해서 최적화된 격자생성 전략을 구사하였으며, 이를 이용하여 플라즈마 질화 시스템을 한 예로 전력 흡수, 가스 유동, 전자 온도, 전자 밀도, 화학종의 분포를 분석하였다. 금속 노출형 안테나의 경우 전력 도입부 쪽에 전력 흡수의 불균형이 모델에서 예측되었으며 유전체피복 안테나의 한 예에서 전력 흡수 표피 깊이가 실제 보고된 값인 53 mm와 잘 일치하는 50 mm로 예측되었다. 또한 수소연료 전지 분리판을 위한 고속 질화 공정용 시스템의 모델링에서도 산업용 대량 처리 시스템에 적절한 다중 분리판의 장입 간격을 가스 유동, 활발한 질화종인 질소 원자와 질소 분자 이온의 농도를 근거로 예측하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 E
• /
• pp.1803-1805
• /
• 1998

Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rf power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution electron temperature and electron density and electron energy distribution function were measured for discharge with same aspect ratio(R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, then we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.404-407
• /
• 2003

Among the ferroeletric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, the $SrBi_2Ta_2O_9$ (SBT) thin film is appropriate as a memory capacitor material due to its excellent fatigue endurance. SBT thin films were etched in high-density $Cl_2/Ar$ in inductively coupled plasma. The maximum etch rate of SBT film is $1834\;{\AA}/min$ under $Cl_2/(Cl_2+Ar)$ of 30 %, rf power of 700 W, dc-bias voltage of -250 V, chamber pressure of 11 mTorr and gas flow rate of 20 sccm.