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http://dx.doi.org/10.4313/JKEM.2010.23.10.752

The Etching Properties of Indium Tin Oxide Thin Films in O2/BCl3/Ar Gas Mixture Using Inductively Coupled Plasma  

Wi, Jae-Hyung (Department of Renewable Energy, Chung-Ang University)
Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.10, 2010 , pp. 752-758 More about this Journal
Abstract
The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.
Keywords
ITO; Inductively coupled plasma; $O_2/BCl_3/Ar$; Etching;
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