• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.31-36
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• 2011

$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.

• Food Science and Biotechnology
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• v.18 no.2
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• pp.565-569
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• 2009

This study was conducted to evaluate the effects of different preparation methods on the recovery and quantification of ginsenosides in raw Korean ginseng (Panax ginseng C.A. Meyer). Eight major ginsenosides ($Rb_1$, $Rb_2$, $Rb_3$, Rc, Rd, Re, Rf, and $Rg_1$) were analyzed by high performance liquid chromatography (HPLC), after which the recovery and repeatability of the extraction of those ginsenosides using 3 different preparation methods were compared [A. direct extraction (DE) method, hot MeOH extraction/evaporation/direct dissolution; B. solid phase extraction (SPE) method, hot MeOH extraction/evaporation/dissolution/$C_{18}$ cartridge adsorption/MeOH elution; C. liquid-liquid extraction (LLE) method, hot MeOH extraction/evaporation/dissolution/n-BuOH fractionation]. Use of the DE method resulted in a significantly higher recovery of total ginsenosides than other methods and a relatively clear peak resolution. Use of the SPE and LLE methods resulted in clearer peak resolution, but lower ginsenoside recovery than the DE method. The LLE method showed the lowest ginsenoside recovery and repeatability among the 3 methods. Given that the DE method employed only extraction, evaporation, and a dissolution step (avoiding complicate and time consuming purification), this technique may be an effective method for the preparation and quantification of ginsenosides from raw Korean ginseng.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.35-50
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• 2012

$900^{\circ}C$이상 초고온 He-gas 분위기 또는 용융불화염 (molten salts, FLINAK) 환경에서 사용될 VHTR(Very High Temperature Reactor)의 IHX(Intermediate heat exchanger)용 열수송 구조재료로 가장 가능성이 높은 합금인 Inconel 617 및 Hastelloy X 상에 습식화학적, 물리적기상합성법(Vacuum arc-plasma과 RF magnetron sputtering) 및 pack cementation에 의한 표면개질 및 마이크로 초내열(refractory ceramics) 코팅층(TiN, TiCN, TiAlN, $Al_2O_3$, $TiO_2$)을 형성시켰다. 고온 장기사용 시 문제가 될 수 있는 고온에서의 조직변화, 미세구조와 상(phase)형성, 고온 부식 및 그에 따른 마모(wear resistance) 손상 등 이들 소재의 내열, 내식 및 내마모 물성을 개선하는 연구를 수행하였다. TiAlN 박막의 경우 공기분위기에서 N이 분해되나 치밀한 산화물($TiO_2/Al_2O_3$ layer)을 형성하여 내식성 있는 보호피막을 형성함으로 기판과의 열팽창 계수로 인한 박리가 발생하지 않아 보호피막으로 적합하였다. Pack cementation법에 의한 aluminiding(Al-Ni합금)도 He 및 공기분위기에서 고온물성의 저하를 가져오는 $Cr_2O_3$의 생성을 충분히 억제하고 있었으며 He 및 air 분위기에서 사용이 가능한 박막으로 여겨진다. 내열 및 내식성에 대한 실험을 종합한 결과, 공기분위기에서 사용할 수 없는 박막은 He-gas 및 FLINAK(LiF-NaF-KF) 용융염 분위기에서도 사용할 수 없었으며, He-gas, FLINAK 및 air 분위기에서 모두 사용이 가능한 박막으로는 Inconel 617에서는 $(TiO_2-)Al_2O_3$, TiAlN 및 Al-Ni이었고 Hastelloy에서는 Al-Ni 및 $Al_2O_3$가 가장 적당하였다.

• Journal of Magnetics
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• v.4 no.1
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• pp.33-37
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• 1999

Unidirectional magnetic anisotropy field ($H_an$) was investigated for thin films of $CdCr{2-2x}In_{2X}Se_4 (0$\leq$x$\leq$0.2). This anisotropy originates from the microscopic anisotropic Dzyaloshinskii-Moriya (DM) interaction which arise from the spin-orbit scattering of the conduction electrons by the nonmagnetic impurities. This interaction maintains the remanent magnetization in the direction of the initial applied field. Then the single easy direction of the magnetization is parallel to the direction of the magnetic field. The anisotropy produced by field cooling is unidirectional I.e. the spins system deeps some memory of the cooling field direction. The chalcogenide spinel of$ CdCr_{2-2x}In){2X}Se_4$belongs to the class of the magnetic semiconductors. The magnetic disordered state is obtained when ferromagnetic structure is diluted by In. Then we have the mixed phase characterised by coexistence the magnetic long range ordering (IFN-infinite ferromagnetic network) and the spin glass order (Fc-finite clusters). The total magnetic anisotropy energy depends on the state of magnetic ordering. In our study we concentrated on the magnetic state with reentrant transition and spin glass state. The polycrystalline $ CdCr_{2-2x}In){2X}Se_4$ thin films were obtained by rf sputtering technique. We applied the ferromagnetic resonance (FMR) and M-H loop techniques for determining the temperature composition dependencies of Han. From the experimental data, we have found that Han decreases almost linearly when temperature is increased and in the low temperature is about three times bigger at SG state with comparison to the state with REE.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.403-404
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• 2013

최근 scaling down의 한계에 부딪힌 DRAM과 Flash Memory를 대체하기 위한 차세대 메모리(Next Generation Memory)에 대한 연구가 활발히 진행되고 있다. ITRS (international technology roadmap for semiconductors)에 따르면 PRAM (phase change RAM), RRAM (resistive RAM), STT-MRAM (spin transfer torque magnetic RAM) 등이 차세대 메모리로써 부상하고 있다. 그 중 RRAM은 간단한 구조로 인한 고집적화, 빠른 program/erase 속도 (100~10 ns), 낮은 동작 전압 등의 장점을 갖고 있어 다른 차세대 메모리 중에서도 높은 평가를 받고 있다 [1]. 현재 RRAM은 주로 금속-산화물계(Metal-Oxide) 저항 변화 물질을 기반으로 연구가 활발하게 진행되고 있다. 하지만 근본적으로 공정 과정에서 산소에 의한 오염으로 인해 수율이 낮은 문제를 갖고 있으며, Endurance 및 Retention 등의 신뢰성이 떨어지는 단점이 있다. 따라서, 본 연구진은 산소 오염에 의한 신뢰성 문제를 근본적으로 해결할 수 있는 다양한 금속-질화물(Metal-Nitride) 기반의 저항 변화 물질을 제안해 연구를 진행하고 있으며, 우수한 열적 안정성($>450^{\circ}C$, 높은 종횡비, Cu 확산 방지 역할, 높은 공정 호환성 [2] 등의 장점을 가진 WN 박막을 저항 변화 물질로 사용하여 저항 변화 메모리를 구현하기 위한 연구를 진행하였다. WN 박막은 RF magnetron sputtering 방법을 사용하여 Ar/$N_2$ 가스를 20/30 sccm, 동작 압력 20 mTorr 조건에서 120 nm 의 두께로 증착하였고, E-beam Evaporation 방법을 통하여 Ti 상부 전극을 100 nm 증착하였다. I-V 실험결과, WN 기반의 RRAM은 양전압에서 SET 동작이 일어나며, 음전압에서 RESET 동작을 하는 bipolar 스위칭 특성을 보였으며, 읽기 전압 0.1 V에서 ~1 order의 저항비를 확보하였다. 신뢰성 분석 결과, $10^3$번의 Endurance 특성 및 $10^5$초의 긴 Retention time을 확보할 수 있었다. 또한, 고저항 상태에서는 Space-charge-limited Conduction, 저저항 상태에서는 Ohmic Conduction의 전도 특성을 보임에 따라 저항 변화 메카니즘이 filamentary conduction model로 확인되었다 [3]. 본 연구에서 개발한 WN 기반의 RRAM은 우수한 저항 변화 특성과 함께 높은 재료적 안정성, 그리고 기존 반도체 공정 호환성이 매우 높은 강점을 갖고 있어 핵심적인 차세대 메모리가 될 것으로 기대된다.

• Journal of the Korea Convergence Society
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• v.8 no.7
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• pp.1-6
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• 2017

This paper presents the design of a frequency measurement device using ADC, EP2AGX FPGA and STM32 processor to accurately measure the frequency of a broadband high frequency signal. The ADC device used in this paper has a sampling frequency of 250 MSPS and a processing frequency bandwidth of 100 MHz. Due to its high sampling frequency, it is difficult to process in ordinary computers or processors, so we implemented the frequency measurement algorithm using the Altra EP2AGX FPGA. The measured frequency is sent to the direction detection controller in real time and fused with the phase signal to calculate the incident azimuth angle of the high frequency signal. The designed frequency measurement device is about 0.2 Mhz in frequency measurement error and 30% less than Anaren DFD-x, which is considered to contribute greatly to the design of radio monitoring and direction detection device.

• ETRI Journal
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• v.38 no.5
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• pp.981-987
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• 2016

We present a cost-effective dual polarization quadrature phase-shift coherent receiver module using a silica planar lightwave circuit (PLC) hybrid assembly. Two polarization beam splitters and two $90^{\circ}$ optical hybrids are monolithically integrated in one silica PLC chip with an index contrast of $2%-{\Delta}$. Two four-channel spot-size converter integrated waveguide-photodetector (PD) arrays are bonded on PD carriers for transverse-electric/transverse-magnetic polarization, and butt-coupled to a polished facet of the PLC using a simple chip-to-chip bonding method. Instead of a ceramic sub-mount, a low-cost printed circuit board is applied in the module. A stepped CuW block is used to dissipate the heat generated from trans-impedance amplifiers and to vertically align RF transmission lines. The fabricated coherent receiver shows a 3-dB bandwidth of 26 GHz and a common mode rejection ratio of 16 dB at 22 GHz for a local oscillator optical input. A bit error rate of $8.3{\times}10^{-11}$ is achieved at a 112-Gbps back-to-back transmission with off-line digital signal processing.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.51-61
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• 1999

$SrBi_2Ta_2O_9$ thin films were prepared on $Pt/SiO_2$/Si p-tyPp (100) substrate by r.f. magnetron sputtering method. The films were annealed at $800^{\circ}C$ and characterized in terms of micro-structures and electrical properties depending on film deposition conditions. XRD patterns of SBT films annealed at $800^{\circ}C$ indicated the typical SBT phase of (006), (111), and (200) with BiPt additional peaks. SEM images show that crystal gram become to grow with increasing the substrate temperature and decreasing the gas pressure. The remanant polarization(2Pr) and the coercive field(Ec) of 200nm thickness SBT film which was deposited at 10$0^{\circ}C$ under 50mtorr gas pressure and annealed at $800^{\circ}C$ were 20.07$\mu$C/$\textrm {cm}^2$ and 79kV/cm, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.6
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• pp.307-310
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• 2011

We have investigated the structural, electrical and optical properties of $In_2O_3$ thin films deposited by RF magnetron sputtering and then annealed at $150^{\circ}C$ and $300^{\circ}C$ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed $In_2O_3$ films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The sheet resistance decreases with a increase in annealing temperature and $In_2O_3$ film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $174{\Omega}/{\Box}$. The optical transmittance of $In_2O_3$ films in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 76% than those of the films prepared in this study.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.330-339
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• 2008

Ground-based interceptors(GBI) comprise a major element of the strategic defense against hostile targets like Intercontinental Ballistic Missiles(ICBM) and reentry vehicles(RV) dispersed from them. An optimum design of the subsystems is required to increase the performance and reliability of these GBI. Propulsion subsystem design and optimization is the motivation for this effort. This paper describes an effort in which an entire GBI missile system, including a multi-stage solid rocket booster, is considered simultaneously in a Genetic Algorithm(GA) performance optimization process. Single goal, constrained optimization is performed. For specified payload and miss distance, time of flight, the most important component in the optimization process is the booster, for its takeoff weight, time of flight, or a combination of the two. The GBI is assumed to be a multistage missile that uses target location data provided by two ground based RF radar sensors and two low earth orbit(LEO) IR sensors. 3Dimensional model is developed for a multistage target with a boost phase acceleration profile that depends on total mass, propellant mass and the specific impulse in the gravity field. The monostatic radar cross section (RCS) data of a three stage ICBM is used. For preliminary design, GBI is assumed to have a fixed initial position from the target launch point and zero launch delay. GBI carries the Kill Vehicle(KV) to an optimal position in space to allow it to complete the intercept. The objective is to design and optimize the propulsion system for the GBI that will fulfill mission requirements and objectives. The KV weight and volume requirements are specified in the problem definition before the optimization is computed. We have considered only continuous design variables, while considering discrete variables as input. Though the number of stages should also be one of the design variables, however, in this paper it is fixed as three. The elite solution from GA is passed on to(Sequential Quadratic Programming) SQP as near optimal guess. The SQP then performs local convergence to identify the minimum mass of the GBI. The performance of the three staged GBI is validated using a ballistic missile intercept scenario modeled in Matlab/SIMULINK.