• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.2
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• pp.90-94
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• 2011

In this paper, the energy transfer is associated with high frequency band and try to analysis the rectifier circuit structure and characteristics and find ways to maximum efficiency. Input signal at 13.56MHz is converted output DC signal with the experiments and measurements. Rectifier cirsuits can be divided into the half-wave, full-wave, bridge rectifier circuit. Research to the present with the passive components are carried out with a focus on efficiency improvements. Factors affecting the efficiency of rectification is dependent on the characteristics of the device. In this experiment, about 70% efficiency can be measured. By using an improved device for high efficiency could be obtained higher efficiency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.783-789
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• 2005

In this paper, a novel design and implementation of a dual-band directional coupler based on RF IPD(Integrated Passive Device)-on-glass technology is proposed, which can be adopted in GSM/GPRS cellular phones for closed loop power control at the output of the power amplifier. The proposed coupler has a compensation capacitor to improve the directivity, and was designed using a new diplexing structure to minimize the cross-band isolation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.118-120
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• 2016

A coplanar waveguide employing periodic 3D coupling structures (CWP3DCS) was developed for application in miniaturized on-chip passive components on silicon radio frequency integrated circuits (RFIC). The CWP3DCS showed the shortest wavelength of all silicon-based transmission line structures that have been reported to date. Using CWP3DCS, a highly miniaturized impedance transformer was fabricated on silicon substrate, and the resulting device showed good RF performance in a broad band from 4.6 GHz to 28.6 GHz. The device as was 0.04 mm² in size, which is only 0.74% of the size of the conventional transformer on silicon substrate.

• Journal of the Optical Society of Korea
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• v.6 no.2
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• pp.27-32
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• 2002

An integrated optical 2$\times$2 add/drop multiplexer in X-cut, Y-propagating LiNbO$_3$ has been demonstrated. The device consists of passive polarization splitters and acousto-optical mode converters with weighted coupling utilizing tapered acoustical directional couplers; their specific design and properties are discussed. The insertion loss has been measured to be about -8.16 ㏈ and -8.6 ㏈ for TE and TM polarizations, respectively. The device shows a 3 ㏈ bandwidth of 2.3 nm, a tuning rate 8.34 nm/MHz around λ = 1554 nm, and a sidelobe suppression of about 14.5 ㏈. Optimum operation is achieved with a RF drive power of about 43 ㎽. Multi-wavelength operation has been demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.30-30
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• 2007

현재 다양한 종류의 RF 통신 제품이 시장에 등장하면서 제품의 경쟁력 확보에 있어 소형화 정도가 중요한 이슈가 되고 있다. Passive Device는 RF Circuit을 제작할 때 많은 면적을 차지하고 있으며 이를 감소시키기 위해 여러 연구가 진행되고 있다. 가장 효과적인 방법으로 반도체 집적기술로 크기를 줄이는 방법이 있으나, 공정이 비싸고 제작 시간이 오래 걸려 제품개발 시간과 개발비용이 상승하게 된다. 반면에 SoP-L 공정은 PCB 제작에 이용되는 일반적인 재료와 공정을 사용하므로 개발 비용과 시간을 줄일 수 있다. SoP-L의 또 하나 장점은 다종 재료를 다층으로 구성할 수 있다는 점이다. 최근 chip-type의 Device를 PCB 기판 안에 내장하는 방법의 RF Circuit 소형화 연구가 많이 진행되고 있다. 본 연구에서는 SoP-L 공정으로 chip-type 수동소자를 PCB 기판 내에 함몰하여 수동소자회로를 구현, 분석하여 보았다. 수동소자회로는 880 MHz~960 MHz(GSM) 영역과 1.71 GHz~1.88 GHz(DCS) 영역을 나누는 Diplexer를 구성하였다. 1005 size의 chip 6개로 구현한 Diplexer를 표면실장과 함몰공정으로 제작하고 Network Analyzer로 측정하여 비교하였다. chip 표면실장으로 구현된 Diplexer는 GSM에서 최대 0.86 dB의 loss, DCS에서 최대 0.68 dB의 loss가 나타났다. 표면실장과 비교하였을 때 함몰공정의 Diplexer는 GSM 대역에서 약 0.5 dB의 추가 loss가 나타났으며 목표대역에서 0.6 GHz정도 내려갔다. 이 결과를 바탕으로 두 공정 간 차이점을 확인하고, 함몰공정으로 chip-type 수동소자를 사용하였을 때 고려해야 할 점을 분석하였다. 이를 바탕으로 SoP-L 함몰공정의 안정성을 높여서 이것을 이용한 회로의 소형화에 적용이 가능할 것으로 기대한다. 특히 능동소자의 DC Power Control에서 고용량의 수동소자를 이용할 때 집적도를 높일 수 있을 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.727-733
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• 2003

In order to realize miniaturized and low-impedance MMIC passive component, a novel microstripline structure employing periodically perforated ground metal was proposed. The novel microstripline structure showed much lower impedance, and shorter guided-wavelength than conventional one. Using the novel microstripline with periodically perforated ground metal, a miniaturized 15 $\Omega$ ratrace was fabricated. The line width of the ratrace was 20 $\mu\textrm{m}$, and the size of it was 0.375 mm$^2$, which is 9.3 % of conventional one. The ratrace exhibited good RF performances from 20 to 30 GHz.