• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1530-1533
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source is under operation for 2.5-GeV electron linear accelerator in Pohang Light Source(PLS) linac. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are required for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider(CVD) unit is intended for the measurement of beam voltage of 400 kV generated from the pulsed klystron-modulator system. Main parameter to determine the standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will discuss the analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance and oil temperature variation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.508-511
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of 5 ∼ 50 (W) at 13.56 (MHz). The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100 (V) ∼+100 (V). When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30 〔W〕. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF rower for efficient light illumination in an electrodeless fluorescent lamp.

• Journal of Satellite, Information and Communications
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• v.5 no.2
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• pp.82-86
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• 2010

In this paper, a power amplifier module for WCDMA base-station applications is designed and implemented using GaN field-effect transistors (FETs), which uses an envelope tracking bias system. The designed module consists of an high gain MMIC amplifier, a driver amplifier, a power amplifier, and bias circuits for envelope tracking applications. Especially, a FET bias sequencing circuit and two isolators are integrated for stable RF operations. All circuits are assembled within a single housing, so its dimension is just $17.8{\times}9.8{\times}2.0\;cm3$. Measured results show that the developed power amplifier module has good envelope tracking capability: the power-added efficiency of 35% at the output power range from 30dBm to 40dBm over a wide range of drain bias.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.25-30
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• 2014

This paper discusses the design of a high frequency Greinacher voltage multiplier as rectifier; it has a greater conversion efficiency and higher output direct current (DC) voltage at high power compared to a simple halfwave rectifier. Multiple diodes in the Greinacher voltage multiplier with distributed circuits consume excited power to the rectifier equally, thereby increasing the overall power capacity of the rectifier system. The proposed rectifiers are a Greinacher voltage doubler and a Greinacher voltage quadrupler, which consist of only diodes and distributed circuits for high frequency applications. For each rectifier, the RF-to-DC conversion efficiency and output DC voltage for each input power and load resistance are analyzed for the maximum conversion efficiency. The input power with maximum conversion efficiency of the designed Greinacher voltage doubler and quadrupler is 3 and 7 dB higher, respectively;than that of the halfwave rectifier.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.8 no.1
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• pp.12-17
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• 2009

In this paper, We play it for the purpose of study about the power amplifier which applied DGS and adaptive bias circuit structure to general Doherty amplifier for the efficiency of a RF power amplifier and a linearity improvement in the WiBro band. As for the IMD3, 3.4dBc was improved with -26.3dBc when we did the measurement result existing Doherty power amplifier and comparison of the Doherty power amplifier which applied an adaptive bias circuit and the DGS which proposed in this paper, and the mean power efficiency verified what was increased in 37%. Also, we were able to know PAE of 36.6% with output power 34.0dBm in P1dB when magnitude of an input signal was 25.6dBm. we did 6dB back off in output P1dB in order to confirm the ACPR which was a nonlinear characteristic and measured the ACPR. we showed the -34.55dBc which was a value of -34.5dBc or below in the 4.77MHz off-set that was a transmission standard. Therefore, we were able to know that we were satisfied with a spectrum mask standard.

• Journal of IKEEE
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• v.13 no.4
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• pp.96-102
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• 2009

We investigate the characteristics of RJ (random jitter) in an analog fiber-optic link employing a MZM (Mach-Zehnder modulator) and an EDFA (Erbium-doped fiber amplifier). RJ has been measured using two methods, one of which derived from the noise spectrum of a RF spectrum analyzer and the other from the histogram data of a sampling oscilloscope. If the optical power and/or the RF power input to the MZM increase, RJ decreases due to the output signal power increase. For the optical link without EDFA, the minimum RJ is about 1 ps at an RF power of 10 dBm and an optical power of 8 dBm measured using the noise spectrum method. For the optical link with an EDFA, RJ decreases toward a jitter floor as the EDFA gain increases. If the gain increases further, it has been observed that RJ increases from the minimum. If the EDFA gain is fixed, RJ is smaller for the case of larger optical input power. As the EDFA gain increases, RJ reduction rate becomes greater for the case of lower optical input power.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.75-82
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• 1999

Ion energy is one of the crucial property in thin film deposition by internal ICP assisted I-PVD. As ion energy is determined by the difference between the plasma potential and the substrate bias potential, ICP excitation frequency was tested with medium frequency of 4 MHz and two types of tuning circuits, alternate and floating LC network with a biasing resistor, were tested. The results showed that plasma potential was less than 5 V in a range of Ar pressures, 5mTorr to 30 mTorr, at 4 MHz RF 600 W and 60 V of maximum RF antenna voltage was maintained either at RF input or output terminal. By proper control of RLC circuit installed after after RF antenna, 50V of RF induced voltage on RF antenna was obtained at 500W input power. The total impedance of RF antenna and plasma was around 10$\Omega$, and minimum RF voltage was obtained with a condition of lowest reactance at most 0.05$\Omega$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1205-1214
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• 2013

Recently spaceborne SAR systems are increasing image resolution and frequency. As a high quality image resolution, the wider bandwidth is required and a wideband signal generator with RF component is very complicated and RF impairments of device is increased. Therefore, it is very important to improve performance by reducing these errors. In this study, the transmission signal of the wideband signal generator is applied to the phase noise, IQ imbalance, ripple gain, nonlinear model of high power amplifier. And we define possible structures of wideband signal generator and measure the PSLR and ISLR for the performance assesment. Also, we extract error of the amplitude and phase from the waveform and use a quadratic polynomial curve fitting and examine the performance change due to nonlinear device. Finally, we apply a high power amplifier predistortion method for non-linear error compensation. And we confirm that distortion in the output of the amplifier by intermodulation component is decreased by 15 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.84-92
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• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1111-1114
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of $5{\sim}50W$ at 13.56MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of $-100V{\sim}+100V$. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30W. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.