• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.422-423
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• 2005

RF Micro switches is a miniature device or an array of integration devices and mechanical components and fabricated with Ie batch-processing techniques. RF Micro switches application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF Micro switches have been developed for the application to the milimeter wave system. RF Micro switches offer a substantilly higher performance than PIN diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.809-812
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• 2002

This paper presents the structures for a CPW shunt RF switch using MEMS(Micro Electro Mechanical System). Recent development in MEMS technology has made the design and fabrication of micro-mechanical switches as new switching elements. The micro-mechanical switches have low insertion loss, negligible power consumption, and good isolation compared to semiconductor switches. The fabricated structure shows an insertion loss of 2dB at 20GHz When a bias voltages of 12V is apply.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.147-150
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• 2005

Low actuation voltage and no contact stiction are the important factors to apply MEMS RF switches to mobile devices. Conventional electrostatic MEMS RF switches require several tens of voltages for actuation. In this paper we propose PAS MEMS RF switch which adopt PZT actuators and seesaw cantilevers to meet the above requirements. The fundamental structures of PAS MEMS switch were designed, optimized, and fabricated. Through the developed processes PAS SPDT MEMS RF switches were successfully fabricated on 4" wafers and they showed good electrical properties. The driving voltage was less than 5 volts. And the insertion loss was -0.5dB and the isolation was 35dB at 5GHz. The switching speed was about 5kHz. So these MEMS RF switches can be applicable to mobile communication devices or wireless multi-media devices at lower than 6GHz.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.55-60
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• 2001

RF MEMS is an exciting emerging technology that has great potential to develop TOC (Transceiver-on-Chip). Applications of the RF MEMS to wireless communications systems are presented. The ability of the RF MEMS technology to enhance the performance and to reduce the size of passive components, in particular, switches, inductors, and tunable capacitors, is addressed. A number of potential wireless system opportunities for the TOC are awaiting the maturation of the RF MEMS technology.

• 센서학회지
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• 제20권2호
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• pp.77-81
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• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• 한국전자파학회논문지
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• 제11권6호
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• pp.952-958
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• 2000

다양한 구조위 트랜스미션 라인과 힌지들을 갖는 고주파용 마이크로머신드 용량성 스위치들이 새롭게 디자인되었고 전기도금 기술, 저온 공정기술, 그리고 건식 식각기술들을 이용하여 제작되었다. 특히, 집적화된 용량성 스위치들이 높은 스위칭 on/off ratio와 on 캐패시턴스를 갖도록 하기 위하여 고유전율을 갖는 SrTiO3라는 상유전체를 절연체로 사용하였다. 제작된 스위치들은 8V의 구동전압, 0.08dB의 삽입손실, 42dB의 높은 isolation, 600의 on/off ratio, 그리고 50pF의 on 캐패시턴스의 특성들을 갖는다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• 한국광학회지
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• 제14권4호
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• pp.466-472
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• 2003

본 논문에서는 서로 다른 길이의 광섬유 지연선로를 광 2${\times}$2 MEMS 스위치로 선택하여 위상 배열 안테나의 각 안테나 소자에 급전되는 RF 신호의 위상을 고속으로 제어할 수 있는 광 실시간 지연선로의 구조를 제안하였다. RF 신호의 주사 방향이 8개인 10 GHz 선형 위상 배열 안테나용 광 실시간 지연선로를 구현하였으며, 실험 결과 최대 시간 지연 오차가 0.2 ps이하, 즉 최대 주사 각 오차 0.84$^{\circ}$로 측정되었다. 또한 제안된 실시간 지연선로에 의해 구동되는 8개의 마이크로 스트립 패치 안테나 소자로 구성된 10 GHz용 선형 위상배열 안테나를 설계하였고, 시뮬레이션을 이용하여 이 안테나의 방사 패턴을 분석하였다.

• 한국인터넷방송통신학회논문지
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• 제18권5호
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• pp.223-228
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• 2018

본 논문은 동축 공동 공진기를 이용한 레인센서를 설계하고 제작한다. 선형적으로 빗방울을 감지할 수 있는 레인센서는 전압 제어 발진기 (VCO), 동축 공동 공진기, RF 스위치, RF 검출기, A / D 컨버터, DAC 및 마이크로 컨트롤러로 구성되었다. 설계된 레인 센서의 작동 주파수 범위는 2.5GHz ~ 3.2GHz이며, 입력 전압과 전류 소스는 24 [V / DC]와 1 [A]이다. 설계된 센서 회로는 VCO, RF 스위치, 고주파수 3GHz에서 소자의 주파수 특성을 변화시키는 RF 검출기를 포함한다. 센서 회로의 주파수 특성에 대한 오차를 교정한다. 이를 위해 공진기에 신호를 보내지 않고 RF 검출기로 신호를 직접 전달하는 기준 경로를 만든다. 시뮬레이션 및 측정 결과에 따르면 시뮬레이션된 공진기 주파수와 제작된 공진기 주파수 사이에 0-50MHz 차이가 있음을 알 수 있다.