• Korean Journal of Materials Research
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• v.19 no.5
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• pp.259-264
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• 2009

In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the $H_2/(Ar+H_2)$ ratio at a low temperature of $150^{\circ}C$. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.

• Journal of the Korean Electrochemical Society
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• v.20 no.2
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• pp.41-48
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• 2017

Herein, we have fabricated an ultrathin aluminum oxide ($Al_2O_3$) coated PP separator by using a RF sputter deposition process. Approximately 20 nm thickness coating layer on the bare PP separator was formed at the power of 55 W for 2 minutes without thermal damage. Whereas only permeability of the coated separator was degraded slightly, other properties such as thermal stability, uptake amount of liquid electrolyte, and ionic conductivity were improved comparing to the bare PP separator. As a result, an only 20-nm-thick $Al_2O_3$ coating layer could improve the rate capability compared with a bare PP separator under a high current density.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.49-53
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• 2011

Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.71-79
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• 1995

For the fabrication of high sensitive intrinsic fiber optic Fabry-Perot interferometeric sensor, the deposition conditions of $TiO_{2}$ thin film used to the internal mirrors of the sensor were investigated. The $TiO_{2}$ film deposited by RF magnetron sputter had higher refractive index ($2.36{\sim}2.48$) and better stoiciometry (O/Ti = 2) than that deposited bye-beam evaporator. In the case of forming $TiO_{2}$ internal mirror by using fusion splicing technique, the $TiO_{2}$ reflection mirror deposited by RF magnetron sputter in the condition of 120W RF power showed high. reflectance and excellent controllability of reflection power. The fabricated intrinsic fiber optic Fabry-Perot interferometer with two $TiO_{2}$ internal mirrors deposited under the condition showed very stable fringe patterns. It is, therefore, expected that the interferometer will be applicable to various high precision sensors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.3
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• pp.588-593
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• 2010

Sputter deposition on a Pt counter electrode was studied using radio frequency (RF) plasma as the improvement of incident photon to current conversion efficiency (IPCE) for dye-sensitized solar cells (DSCs). Effects of the sputtering thickness and the incident angle on a Pt counter electrode for DSCs were investigated. Experiments to get the optimal sputtering time for the performance of the DSCs were carried out. And it is found that the optimized sputtering time was 120 seconds, in addition, the incident angles of the substrate was adjusted from $0^{\circ}$ to $60^{\circ}$. The maximum efficiency of 5.37% was obtained at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.154-157
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• 2006

The counter electrode widely used in DSCs (Dye-sensitized Solar Cells) is constructed of conducting glass substrates coated with Pt films, where the platium acts as a catalyst. Pt counter electrodes in DSCs are one important component. It is expected that characteristics of Pt electrodes strongly depend on fabrication process and its surface condition. In this study, Pt counter electrode surface of DSC is deposited by reactive RF magnetron sputtering under the conditions of Ar 5mtorr, RF power of 120w and substrate temperature of $100^{\circ}C$. Surface morphology of Pt electrodes was investigated by FE-SEM and AFM. And this paper shows our recent results and technology to fabricate the new designed cell with Pt electrodes deposited by sputtering method. We have achieved fill factor 65% and photoelectric conversion efficiency around 2.6% as the best results of new designed DSCs structure.

• Progress in Superconductivity
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• v.5 no.2
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.178-181
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• 2000

In this experiments, tin oxide thin film anode for microbattery was deposited by using RF magnetron sputtering. The RF power and operating pressure during deposition were fixed at $2.5W/cm^2$ and 10mTorr respectively. The partial pressure of oxygen was varied from $0\%\;to\;100\%$ to control oxygen content and metal Sn chips were used further reducing of oxygen content. According to reduction in the oxygen content formation of the irreversible $Li_2O$ was reduced a thin film anode of $SnO_x$ of high capacity was fabricated. The optimum $SnO_x$, thin film was $SnO_{1.43}$ which exhibited a reversible capacity of $ 500{\mu}Ah/cm^2{\mu}m$ and exhibited good reversibility.