• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.570-572
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• 2000

The characteristics of ozone generation were investigated in accordance with varying the diameter of internal electrode in an ozonizer using RF power source. The characteristics of ozone generation were improved with the diameter of internal electrode increased, but thermal loss was increased. Therefore, it was found that it is inevitable that the cooler has to be installed in an ozonizer which uses RF power source.

• Bulletin of the Korean Space Science Society
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• 2004.10b
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• pp.360-363
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• 2004

This review is concerned with the MP (multipactor) phenomena of the diplexer for RFDU DM of next generation satellite. The MP discharge is serious problems to design RF components in space applications such ase damage of physical structure, performance degradation, and mission failure of the satellite. In this work, we employed the 3D finite element method (FEM) to calculate the critical gap points and adopted ESTEC curve, MP susceptibility zone, to analyze the maximum handling RF power in the diplexer. And this work also recommends that one should design the tx filter of the diplexer which is more wider bandwidth upto the points to escape the ears of the group delay especially the cavity type of RF components in space applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.101-103
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• 2009

Minimizing the residual impurity level on the MgO layer is the key factor for reducing temporal dark image sticking on bright screen. In this paper, to reduce the residual impurity level on the MgO layer of 50-in. full-HD ac-PDP with He (35%) - Xe (11%) contents, RF-plasma treatments on the MgO layer are adopted under various gases for plasma treatment. As a result of monitoring the difference in the display luminance between the before and after 5-min. sustain discharge with a square-type image at peak luminance, the Ar and Ar>$O_2$ plasma treatments can reduce the temporal dark image sticking on the bright screen in an ac-PDP.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.79-82
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• 2004

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.246-249
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• 1997

Diamond thin films were deposited on Si wafer from a mixture of CE$_4$ and H$_2$ by RF Plasma CVD. The films were de77sited under the following conditions : discharge power of 500w, H$_2$ flow rate of 30sccm, chanter pressure of 20∼50Torr, and CH$_4$ concentration of 0.5∼2%. The deposition time was 30∼40 hours because of low growth rate. The deposited films were characterized by Scanning Electron Microscopy and X-ray Diffraction method.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.534-537
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• 2001

This paper deals with the active clamp ZVS flyback converter for RF generator. The proposed converter has the characteristics of the low switching noise and high efficient regarding conventional flyback converter. To verify validity of the proposed converter, the 100kHz, 48V, 300W converter are simulation and experimental result. This converter will be apply to the discharge drive circuit for PDP(Plasma Display Panel) TV.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.244-245
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• 2007

The RF inductive discharge of inductively couples plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. Although most practical ICPs operate at 13.56 [MHz] and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. in and electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of RF matching systems and RF generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, electric and optical characteristics of electrodeless fluorescent lamp by changing ferrite position is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.139.2-139.2
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• 2013

6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3 ${\mu}m/min$ when the scan time is 45 sec.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.58-63
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• 1995

The effects of substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio on the dielectric constant and optical bandgap of amorphous silicon nitride (a-SiNx:H) thin films prepared by PECVD method using RF glow discharge decomposition of $SiH_{4}$ and $NH_{3}$ gas mixtures have been studied. The dielectric constant and optical bandgap of a-SiNx:H thin films were greatly exchanged as by increasing substrate temperature, RF power, and $NH_{3}/SiH_{4}$ gas flow ratio. The dielectric constant of a-SiNx:H films was increased and optical bandgap of a-SiNx:H films was decreased as the substrate temperature was increased. When the substrate temperature, RF power, gas pressure, $NH_{3}/SiH_{4}$ gas flow ratio, and thickness were $250^{\circ}C$, 20 W, 500 mTorr, 10 and $1500\;{\AA}$, respectively, the dielectric constant, breakdown field and optical bandgap of a-SiNx:H film were 4.3, 1 MV/cm, and 2.9 eV, respectively.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.173-176
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• 2009

In the stator windings of a 6.6 kV rotating machine, internal discharges, slot discharges, and surface discharges are mainly caused by internal voids and insulation degradation. If a partial discharge(PD) occurs in an inner-part of the stator windings, it will cause electromagnetic pulses with wide frequency ranges. Discharge sparks and electromagnetic pulses generated from a discharge source, can be detected using various RF resonators like an EM sensor. In order to detect these types of electromagnetic sources, a planar patch sensor was designed and fabricated using a CST-MWS simulation, and PD signals from an artificially defected stator winding were also measured by the sensor proposed in this study. Furthermore, an HFCT was used as a reference sensor and compared with the proposed new planar patch sensor. In the results of the experiment, the planar patch sensor showed a similar performance to the HFCT sensor.