Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.08a
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- Pages.139.2-139.2
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- 2013
High Speed Etching for Saw Damage Removal Using by RF DBD
- Published : 2013.08.21
Abstract
6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3