• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.27-36
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• 2001

In this paper, micromachined millimeter-wave cavity resonators ar presented. One-port and two-port cavity resonators at Ka-band are designed using 3D design software, HP $HFSS^{TM}$ ver. 5.5 Cavity resonators are fabricated on Si substrate, which is etched down for the cavity, bonded with a Quartz wafer in which metal patterns for the feeding line coupling slot are formed. One-port resonator shows the resonant frequency of 39.34 GHz, the return loss of 14.5 dB, and the loaded $Q(Q_{L})$ of 150. Two-port cavity resonator shows the resonant frequency of 39 GHz, the insertion and return losses of 4.6dB and 19,9dB, the loaded($Q_{L}$) and unloaded $Q(Q_{U})$) of 44.3 and 107, respectively.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.402-404
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• 2003

Radio frequency identification (RF-ID) is an automatic data capture (ADC) technology that comprises small data-carrying device(is called Tag) and fixed or mobile device(is called reader). Tags are attached or deattached device. Readers may be installed at locations where data capture is required, and may also be in the form of portable readers. In this paper, we are proposing an application for the subway station using the RF-ID system and a system for the gateless fare collection passing through the booth in only carrying the card. In this system that RF-ID system and Bluetooth are applied. We designed two wireless communication channels. One is the 125kHz communication channel by FSK and PSK for power supplying on the card and identification and the other is 2.4GHz channel for the collection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.739-744
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• 1996

Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.6B
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• pp.970-976
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• 2010

Platform convergence originated from the convergence of broadcast and telecommunication is making rapid progress including IT and not-IT fields in order to provide a variety of converged services, S/W eco-system construction, and so on. With the advent of convergence environment, IEEE 802.15.4-based RF4CE technology is rising because of creating momentum for the market using converged connectivity between home and office devices as well as all around located devices. In this paper, we present enhanced RF4CE key seed distribution approach in order to provide efficient connection and control between devices. The proposed approach consists of device mutual authentication, initial vector assignment, and two-phase key seed distribution. Moreover, we make a development real RF4CE test board and its key agreement simulator to verify the proposed approach.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.4
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.269.2-269.2
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• 2008

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.249-257
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• 2000

In this paper, we propose the use of stochastic finite element method, that is popularly employed in mechanical structure analysis, for more practical designing purpose of RF device. The proposed method is formulated based on the vector finite element method cooperated by pertubation analysis. The method utilizes sensitivity analysis algorithm with covariance matrix of the random variables that represent for uncertain physical quantities such as length or various electrical constants to compute the probabilities of the measure of performance of the structure. For this computation one need to know the variance and covariance of the random variables that might be determined by practical experiences. The presenting algorithm has been verified by analyzing several device with different be determined by practical experiences. The presenting algorithm has been verified by analysis several device with different measure of performanes. For the convenience of formulation, two dimensional analysis has been performed to apply it into waveguide with dielectric slab. In the problem the dielectric constant of the dielectric slab is considered as random variable. Another example is matched waveguide and cavity problem. In the problem, the dimension of them are assumed to be as random variables and the expectations and variances of quality factor have been computed.