• 한국전자파학회논문지
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• 제12권1호
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• pp.27-36
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• 2001

In this paper, micromachined millimeter-wave cavity resonators ar presented. One-port and two-port cavity resonators at Ka-band are designed using 3D design software, HP $HFSS^{TM}$ ver. 5.5 Cavity resonators are fabricated on Si substrate, which is etched down for the cavity, bonded with a Quartz wafer in which metal patterns for the feeding line coupling slot are formed. One-port resonator shows the resonant frequency of 39.34 GHz, the return loss of 14.5 dB, and the loaded $Q(Q_{L})$ of 150. Two-port cavity resonator shows the resonant frequency of 39 GHz, the insertion and return losses of 4.6dB and 19,9dB, the loaded($Q_{L}$) and unloaded $Q(Q_{U})$) of 44.3 and 107, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.402-404
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• 2003

Radio frequency identification (RF-ID) is an automatic data capture (ADC) technology that comprises small data-carrying device(is called Tag) and fixed or mobile device(is called reader). Tags are attached or deattached device. Readers may be installed at locations where data capture is required, and may also be in the form of portable readers. In this paper, we are proposing an application for the subway station using the RF-ID system and a system for the gateless fare collection passing through the booth in only carrying the card. In this system that RF-ID system and Bluetooth are applied. We designed two wireless communication channels. One is the 125kHz communication channel by FSK and PSK for power supplying on the card and identification and the other is 2.4GHz channel for the collection.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• 한국표면공학회지
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• 제29권6호
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• pp.739-744
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• 1996

Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

• 한국통신학회논문지
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• 제35권6B호
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• pp.970-976
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• 2010

방송과 통신의 융합으로 시작된 미디어 플랫폼간의 융합은 이제 다양한 컨버전스 서비스를 창출하기 위한 S/W 생태계 구축을 시작으로 IT 및 비IT를 망라하여 전 업종으로 융 복합화를 앞당기고 있다. 이러한 컨버전스 환경의 대두와 함께 가정 및 산업용, 그리고 다양한 환경에서의 기기간 자동화 및 연결을 통한 새로운 부가 서비스를 창출하려는 RF4CE (Radio Frequency for Consumer Electronics) 기술이 대두되고 있으며, 본 논문에서는 기기간 효율적인 연결 및 제어를 위해 활용될 수 있는 ZigBee 표준화 기구의 RF4CE 기술에서의 향상된 키 교환 스킴에 대한 방안을 제시하였다. 제시된 방안은 기기간 상호 인증 및 두 단계의 Key Seed 분배 기법 등으로 구성되어 있으며, 본 논문에서는 제안 방안의 분석 및 실제 구현 및 실험을 통해 그 유용성을 검증하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

• IEIE Transactions on Smart Processing and Computing
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• 제3권4호
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.269.2-269.2
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• 2008

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권4호
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• pp.249-257
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• 2000

In this paper, we propose the use of stochastic finite element method, that is popularly employed in mechanical structure analysis, for more practical designing purpose of RF device. The proposed method is formulated based on the vector finite element method cooperated by pertubation analysis. The method utilizes sensitivity analysis algorithm with covariance matrix of the random variables that represent for uncertain physical quantities such as length or various electrical constants to compute the probabilities of the measure of performance of the structure. For this computation one need to know the variance and covariance of the random variables that might be determined by practical experiences. The presenting algorithm has been verified by analyzing several device with different be determined by practical experiences. The presenting algorithm has been verified by analysis several device with different measure of performanes. For the convenience of formulation, two dimensional analysis has been performed to apply it into waveguide with dielectric slab. In the problem the dielectric constant of the dielectric slab is considered as random variable. Another example is matched waveguide and cavity problem. In the problem, the dimension of them are assumed to be as random variables and the expectations and variances of quality factor have been computed.