• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• 정보보호학회논문지
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• 제17권1호
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• pp.89-96
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• 2007

EPC 네트워크(Electronic Product Code Network) 환경 기반의 REID 시스템은 사물에 직접적인 접촉을 하지 않고 RF(Radio Frequency)신호를 이용하여 사물의 정보를 읽어 오거나 기록할 수 있다. 이것은 기존의 바코드 시스템에 비해서 저장능력이 뛰어나며 비접촉식이라는 이점을 갖는다. 이런 RFID 시스템과 모바일 시스템을 접목함으로서 사용자에게 새로운 부가서비스를 제공하는 모바일 REID 시스템이 만들어지게 되었다. 그러나 비접촉식의 RF(Radio Frequency) 통신을 이용하여 사물의 정보를 가져온다는 이점은 개인의 프라이버시 침해라는 문제점을 발생시킨다. 본 논문에서는 모바일 기반의 RFID 시스템에서의 개인 프라이버시를 보호하는 기법을 제안한다. 제안한 기법은 기존에 제안된 기법들 보다 효율적으로 프라이버시 보호기능을 제공한다.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.7-14
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• 2002

In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.417-420
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• 2004

The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 1996년도 추계학술대회논문집; 한국과학기술회관, 8 Nov. 1996
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• pp.431-437
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• 1996

The natural frequencies of annular plates in contact with water were theoretically derived and its validity was checked by experiments. The experimental frequency response functions of the annular plates were obtained using the impact hammer method. Comparison of the FRF obtained using the impact hammer and the fRF using shaker attached showed that the former was better than the latter due to the mass effect and additional constraint from the instrumentation. It was found that the experimentally extracted natural frequencies of annular plates in contact with water were in good agreement with those theoretical values.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• 한국재료학회지
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• 제21권6호
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.374-378
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• 2010

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.315-315
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• 2007

본 논문에서는 DLC (Diamond-like carbon)박막이 가지는 높은 경도, 낮은 마찰계수, 전기적 절연성, 화학적 안정성 등의 특성을 이용하여, 리소그래피를 위한 resist나 hard coating물질로써 응용하기 위해, DLC 박막의 에칭에 관한 연구를 진행하였다. DLC 박막의 합성 과 에칭은 13.56 MHz RF plasma enhanced vapor deposition technique를 통해 이루어졌으며, DLC 박막은 150 W의 RF Power에서 메탄 $(CH_4)$과 수소$(H_2)$ 가스를 이용하여 약 300 nm의 두께로 제작되었으며, DLC박막의 에칭은 RF power의 변화 (50~250 W)와 산소 $(O_2)$가스의 유량변화 (5~25 sccm)에 따라 실시하였다. 에칭 되어진 DLC 박막의 표면 특성들은 AFM (atomic force microscopy)과 contact angle 장치를 사용하여 측정되었고, 측정된 결과로써 DLC 박막은 RF power와 산소 가스의 유량이 높을수록 etching rate는 증가하였고, 박막의 표면은 거칠어졌으며, 결국 DLC 표면에서는 산소에 의한 결합의 증가로 인해 친수성을 나타내었다.

• 한국항행학회논문지
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• 제24권6호
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• pp.593-600
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• 2020

해양 IoT 서비스를 위한 장치들은 해양 환경에 강인해야 한다. 특히 바닷물 속에 부유하는 전송 장치는 바닷물의 영향을 덜 받도록 설계되어야 한다. 본 연구에서는 전자 어구 실명제 모니터링 시스템에서 어구 상태를 감시하는 부이에 내장되는 안테나를 설계하고 제작한 결과를 보이고 있다. 안테나의 주파수 대역은 920 MHz이고, 부이의 초소형과 경량화를 위해 PCB 패턴 안테나 구조로 설계 제작되었다. 시뮬레이션 결과 제안한 안테나를 내장한 부이가 바닷물 속에 잠기는 정도가 심할수록 반사 계수 증 RF 특성이 저하되지만 빔의 방사 각도는 안테나 하층부에서 점점 상층부로 옮겨가는 것을 확인하였다. 즉 바닷물의 영향을 많이 받을수록 전파 성능은 저하되지만 방사 특성은 해양 IoT 서비스 환경에 적합하다는 것을 확인하였다. 향후 RF 성능을 개선할 수 있는 안테나 구조를 변경 설계하면 제안한 안테나와 부이는 LPWA (low power wide area) 기반 IoT 네트워크 구현에 기여할 것으로 기대된다.