• Applied Science and Convergence Technology
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• 제26권2호
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• pp.34-41
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• 2017

A 2.45 GHz microwave plasma with linear antenna has been prepared for hydrophobic and wear-resistible surface coating of carbon steel. Wear-resistible properties are required for the surface protection of cutting tools and achieved by depositing a hydrogenated amorphous carbon film on steel surface through linear microwave plasma source that has $TE_{10}-TEM$ waveguide. Compared to the existing RF plasma source driven by 13.56 MHz, linear microwave plasma source can easily generate high density plasma and provide faster deposition rate and wider process windows. In this study, $Ar/CH_4$ gas mixtures are used for hydrogenated amorphous carbon film deposition. When microwave power of 1000 W is applied, 40 cm long uniform $Ar/CH_4$ plasma could be obtained in gas pressure of 200~400 mTorr. The Vickers hardness measurement of hydrogenated amorphous carbon film on steel surface was evaluated. It was found the optimized deposition condition at $Ar:CH_4=25:25$ sccm, 300 mTorr with microwave power of 1000W and RF bias power of 100W. By deposition of hydrogenated amorphous carbon film, contact angle on steel surfaces increases from $43.9^{\circ}$ to $93.2^{\circ}$.

• 한국전자통신학회논문지
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• 제14권1호
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• pp.41-48
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• 2019

본 논문에서는 추적 레이더시스템의 핵심부품인 L대역 로터리조인트의 설계를 다룬다. 로터리조인트는 추적 시스템 안테나 회전부에 장착되어 회전하는 안테나와 고정된 신호처리부를 연결하는 구성품으로 안테나의 회전시에도 꼬임이 없이 RF신호를 원활하게 전달하는 주요부품이다. 로터리조인트의 신호 삽입손실을 개선하기 위해, 유전체 종류, 급전분배링 형상 및 유전체 형상 등을 다양하게 수정하였다. 제안한 로터로조인트는 해외 도입품과 비교하여 향상된 성능을 확인하였다. 도입품 로터리조인트의 최대 삽입손실은 1.26dB이었으나, 본 논문에서 제안한 로터리조인트의 최대 삽입손실은 0.68dB로 도입품 대비 약 46%정도 개선되는 것을 확인하였다.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.300-305
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• 2015

$WO_3$, $SiO_2$, and $TiO_2$ films with hydrophilic property are deposited by rf-magnetron sputtering. Their wettability is strongly depends on the presence or absence of the oxygen plasma etching on the glass substrates. The $TiO_2$ film of 50 nm-thick on the plasma etched glass shows a water contact angle (WCA) below $5^{\circ}$ which means a super-hydrophilic surface. However, WCA values are gradually degraded when the films are exposed under atmosphere, especially $WO_3$. In order to improve hydrophilic property, the degraded films can be again recovered by UV illumination for 10 sec using UV-light and the $TiO_2$ film shows a super-hydrophilic surface about $3^{\circ}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• 대한기계학회논문집A
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• 제26권2호
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• pp.260-266
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• 2002

DLC films were deposited on Si wafer by RF plasma assisted CVD using CH4 gas. Tribological tests were conducted using rotating type ball on disk friction tester in dry air. Four kinds of mating balls were used. The mating balls were made with stainless steel but apply different annealing conditions to achieve different hardness conditions. Testing results in all load conditions showed that the harder the mating materials, the lower the friction coefficient among the three kind of martensite mating balls. In case of austenite balls, the friction coefficients were lower than fully annealed martensite ball. The high friction coefficient in soft martensite balls seems to be caused by the larger contact area between DLC film and ball. The wear tracks of DLC films and mating balls could have proven that effect. Measuring the wear track of both DLC films and mating balls have similar tendency comparing to the results of friction coefficients. Wear rate of austenite balls were also smaller than that of fully annealed martensite ball. The results of effect of applying load showed, the friction coefficients were become decrease when the applying loads exceed critical load conditions. The wear track of mating balls showed that some material transfer occurs from DLC film to mating ball during the high friction process. Raman spectra analysis showed that transferred material was a kind of graphite and contact surface of DLC film seems to undergo phase transition from carbon to graphite during the high friction process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 폴리머
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• 제30권5호
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• pp.391-396
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• 2006

플라스마 표면처리는 접착력, 친수성, 소수성 등과 같은 고분자의 표면 특성을 개질시키기 위하여 사용되고 있다. 플라스마를 이용하여 표면을 처리하게 되면 고분자의 전체적인 물성은 유지한 채 표면의 특성만을 변화시키는 장점을 가지고 있다. 본 연구에서는 다양한 가스를 사용한 플라스마를 이용하여 상업용 Polyarlide66 (PA66) /polyphenylene(PPE) 고분자의 표면의 접착력 향상을 위해 표면 유기물 제거와 친수성으로 개질을 시도하였다. 플라스마 처리 공정 변수인 공정 파워, 처리 시간, 가스 종 들을 변화시키면서 표면을 개질하였으며 PASS/ PPE 고분자의 친수성 개질을 확인하기 위하여 접촉각 및 표면 자유에너지 변화를 측정하였다. 또한 유기물 제거를 FTIR 분석을 통하여 확인하였다. 플라스마를 이용한 표면처리 결과, 공정 파워 100 W, 처리 시간 2분, 아르곤/산소 공정가스에서 가장 낮은 접촉각(73도에서 14도)과 가장 높은 표면 자유에너지 ($44.20 mJ/m^2$에서 $50.03 mJ/m^2$)를 나타내었다.

• 대한치과보철학회지
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• 제29권1호
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• pp.23-37
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• 1991

The understanding the natureof occlusal tooth contacts of natural dentition is important for correct diagnosis and treatment of diseases developed in stomatognatic system. Several investigator have studied the distribution of tooth contacts in maximum intercuspation and have reported contact locations with respect to the tooth position. Many methods have been clinically applied for the occlusal analysis in the intercuspal position. However, there are few quantative methods. This study analyzed the new software version of the T-Scan system to record and analyze occlusal contact balance in the anterior-posterior and right-left directions. Six time moment statistics and five moment statistics were calculated in the midsagittal and the incisal axes of the occlusal plane. In the present study, informed consent was obtained from 100 subjects with natural dentitions. The results were as follows ; 1. The mean of the dental arch length & width were 48.78, 65.32mm in whole population, 49.09mm, 65.50mm in males, 48.78mm, 64.63mm in females, respectively. 2. The mean of TLR & PLR were 0.193mm(left), 0.311mm(left), respectively. Therefore, the distribution of tooth contacts was bilaterally symmetric. 3. The mean of TFB & PFB were 29.168mm, 29.055mm, and that of LFB & RFB were 29.627mm, 29.587mm, respectively, and the qualitative center of occlusal contacts was the firtst molar. 4. The mean of LL & RL were 31.666mm, 31.377mm, respectively, and the quantitative center of occlusal force was the first molar. 5. The mean of LF & RF were 60.237N, 59.276N, respectively and Left-right moment was 72.491Nmm. Therfore, the distribution of occlusal force was bilaterally balanced.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).