• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.118-122
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• 2006

Diamond-like carbon (DLC) films were prepared on silicon substrates by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the tribological properties of the DLC films using friction force microscopy (FFM). The films were annealed at various temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film was observed by scanning electron microscopy (SEM) and surface profile analysis. The surface morphology and surface energy of the films were examined using atomic force microscopy and contact angle measurement, respectively. The hardness of the DLC film was measured as a function of the post annealing temperature using a nano-indenter. The tribological characteristics were investigated by atomic force microscopy in FFM mode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.115.2-115.2
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• 2013

10 Gev의 빔에너지를 가지는 4세대 방사광 가속기의 hard X-ray구간에는 약 200 m의 언듈레이터 홀이 건설 중이며, 내부에는 길이 5 m의 언듈레이터와 1m의 언듈레이터 사이구간이 연속적으로 배치되어 있다. 이 구간에는 언듈레이터를 비롯하여 phase shifter, quadrupole, BPM 등이 설치되는 진공용기가 있으며, 이 진공용기는 최적화된 환경을 제공하기 위해서 매우 얇고 긴 형태로 제작되며 각 구간마다 빔손실이 발생하지 않도록 설계가 되어야 한다. 여기에서는 현재 실험 및 설계 중인 언듈레이터 챔버와 사이구간의 진공시스템에 대하여 소개하고, 현재까지 수행한 결과와 앞으로의 진행방향에 대해 다루고자 한다.

• 대한화학회지
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• 제66권5호
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• pp.341-348
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• 2022

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.36-41
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• 2023

We investigated the properties of vanadium oxide (VOx) buffer layers deposited by a dual RF magnetron sputtering method under various target powers for inverted organic solar cells (IOSCs). Sputter fabricatged VOx thin films exhibited higher crystallinity with the increase of target power, resulting in a uniform and large grain size. The electrical properties of VOx films are improved with the increase of target power because of the increase of V content. In the results, the performance of IOSCs critically depended on the target power during the film growth because the crystalllinity of the VOx film affects the carrier mobility of the VOx film.

• 공업화학
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• 제21권1호
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• pp.98-103
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• 2010

저압 플라즈마와 대기압 플라즈마를 사용하여 폴리카보네이트를 처리한 후 표면 개질 효과를 접촉각 측정을 통하여 비교 분석하였다. 플라즈마 처리 전의 폴리카보네이트의 탈이온수의 접촉각은 $82.31^{\circ}$이었으나 플라즈마 처리 후의 최소 접촉각은 산소 분위기의 저압 플라즈마에서 $9.17^{\circ}$의 최소 접촉각을 얻을 수 있었다. 플라즈마 방전 전력과 반응기체의 유량 증가에 따른 접촉각의 변화는 크지 않았으나 지속적으로 감소하는 특성을 보였다. 플라즈마 처리 후 경과시간에 따라 접촉각의 증가 현상을 보여 플라즈마 처리 후 후속 공정은 가급적 빨리 진행하는 것이 표면에너지 증가에 따른 효과를 이용하는데 효율적이다. 표면 화학결합 분석에서 산소분위기의 플라즈마 처리는 표면에 상대적으로 많은 극성 작용기를 형성하였다. 전반적으로 폴리카보네이트의 표면 개질에서 저압 산소플라즈마를 사용하여 처리하는 것이 대기압 플라즈마보다 효과적으로 친수성 표면을 만들 수 있었다.

• 대한치과보철학회지
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• 제29권3호
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• pp.121-140
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• 1991

Fifteen dental college students of Chosun University without the abnormal occlusion, the history and symptom of temporomandibular dysfunction(TMD), and who had all permanent teeth except third molar and the fifteen moderate group and the fifteen severe group classified according to Helkimo's dysfunction index among patients on the basis of the symptom of TMD were selected. The occlusal contact, occlusal force and occlusal interference in eccentric movement was studied and analyzed using T-Scan system. The result were as follows : 1. The TLR centering around midsagittal axis was located at $1.42{\pm}0.82mm$ in control group, $3.36{\pm}1.45mm$ in severe group, and as TMD was heavier, occlusal contact was located at the farther point from midsagittal axis. 2. The PLR from the first contact to the fifth contact centering around midsagittal axis was located at $1.73{\pm}1.78mm$ in control group, $3.36{\pm}1.41mm$ in moderate group, and $5.39{\pm}4.32mm$ in severe group, and as TMD was heavier, occlusal contact was located at the farther point from midsgittal axis. 3. The TFB, PFB, RFB and LFB of occlusal contact centering around incisal axis had no significant difference statistically among control group, moderate group, and severe group, and it was located at first molar. 4.The LF and RF was smaller in TMD group than in control group. 5. The LR moment of occlusal force centering around midsagittal axis was located at $178.51{\pm}139.81N.mm$ in control group, $466.25{\pm}296.47N.mm$ in moderate group, and $749.18{\pm}588.18N.mm$ in severe group. And as TMD was heavier, it was located at the farther point from midsagittal axis. 6. The RL and LL of occlusal force centering around incisal axis had not-significance statistically among control group, moderate group, and severe group, and it was at the first molar. 7. The number of occlusal interference of the eccentric movement was increased in the patients of TMD.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.929-932
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• 2005

We report a pull-up type RF MEMS switch using double electrode without elastic deformation of the cantilever involved in the actuation. At a voltage of 4.5 V, reliable actuations are achieved such that the movable lower contact pad is pulled up by the electrostatic force to make contact with the upper pad. At a frequency of 50 GHz, an insertion loss of 0.7 dB and an isolation of 50.7 dB are obtained from the switch. The measured transient times for switch-on and switch-off are 120 and 80 us, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.70-74
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• 2017

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.