• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.4
• /
• pp.147-151
• /
• 2002

The resistances of metal2 contact to metall and poly Si are checked by various RF etch conditions in terms of pre-cleaning. The changes of resistance are evaluated by statistical analysis method(SAS) for the AC bias power, coil power and RF target. The contact area on poly Si is shown by TEM image and the distributions of contact resistance according to ar etch target and RTP are investigated. The RTP groups have larger variations than normal RF etch targets. When the RF etch target becomes lower and coil power becomes higher, the resistances of metal2 contact to metals and poly Si have lower contact resistance. But the condition of AC bias power did not satisfied low meta12 contacts resistance for metall and poly Si simultaneously. The R-square of ststistical analysis was 0.98 for resistances of meta12 contact to poly Si and 0.87 for resistances of meta12 contact to metall.

• Proceedings of the KIEE Conference
• /
• 2003.11c
• /
• pp.540-543
• /
• 2003

This paper presents design and manufacture of RF type non-contact radiological dosage measuring device. It also concerns on the broad out-line and the ways of improvement about RF type non-contact radiation measuring device. Measuring radiological dosage with non-contact RF, the stability and efficiency of the measure have been improved by reforming constant current circuit. Furthermore, applying communication protocol in process makes it possible to achieve faster and more accurate communication than old circuit. On the base of those, RF type non-contact radiological dosage measuring device which consists of radiological dosage measuring module and Reader module has been designed and manufactured. While testing communication against embodied device, the possibility of the field application could be confirmed.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.6
• /
• pp.231-238
• /
• 2015

In this paper, we have studied a sheet resistance property of N- and P-type thin films deposited on ITO glass by use of RF magnetron sputtering. The N-type samples which has the deposition condition of 150W RF power, shows the highest current value, and the samples deposited for 15 minutes shows a better Ohmic contact property. As the substrate temperature, RF power and deposition time are increased, the sheet resistance of the samples is increased, and the low sheet resistance sample shows a better I-V property. The P-type samples shows the highest current value by 150W RF power condition as similar as N-type samples. and the samples deposited for 20 minutes shows a better ohmic contact property. The sheet resistance of the both types samples is increased as increasing RF power and deposition time.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.33 no.4
• /
• pp.41-46
• /
• 2005

In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.1
• /
• pp.6-9
• /
• 2010

Surface properties of polytetrafluoroethylene(PTFE) films fabricated by rf-magnetron sputtering system with UV surface treatment were investigated to increase water contact angle for their hydrophobic property. We found that the surface morphology and water contact angles of PTFE film modified as a function of the UV treatment times using UV-irradiation were influenced. The water contact angle of PTFE film with optimized UV treatment time for 15 minute showed a high hydrophobicity compared with the film without any surface treatment. We thought that it was due to the energy change of PTFE surface with an adhesion improvement to the glass surface as a smoothing a rough surface with needle-shape and/or the enhancement of an interface property as a removing some defects on the surface like a cleaning effect.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.282-283
• /
• 2007

본 논문에서는 저전압에서 구동 할 수 있는 압전구동 방식의 RF MEMS 스위치를 설계하였다. 설계는 유한요소기법(FEM)을 지원하는 시뮬레이터 (ConventorWare)를 사용하여 수행하였고, 이를 바탕으로 deflection, contact force, stress 등 기계적인 해석을 함으로써 최적화된 설계를 할 수 있었다. 이번 설계에서는 적절한 contact force를 유지하면서 hinge에서 받는 stress를 최소화하기 위하여 구동기를 2개 사용한 듀얼형식의 모델을 제안하였고, hinge의 모양은 'ㄷ'로 하여 deflection을 향상시켰다. 이 듀얼형식의 최적화된 모델은 signal line과 contact pad 간의 gap이 3.4${\mu}m$일 때, 최초 2.8V에서 contact이 이루어졌으며, 5V에서 12.4${\mu}N$의 contact force와 116MPa의 stress를 얻었고, 차후, SP4T나 SP6T 등의 설계시 공간 효율이 높은 다양한 형태의 구조를 설계할 수 있다.

• Journal of Advanced Marine Engineering and Technology
• /
• v.38 no.1
• /
• pp.70-77
• /
• 2014

In this work, we studied basic characteristics of transmission lines employing various PSS (periodic strip structure) on silicon substrate for application to a miniaturization of RF components. According to the results, the transmission lines employing various PSS showed wavelength shorter than conventional coplanar waveguide due to their strong wave characteristics. Especially, with-contact structure was most effective for a miniaturization of RF component. Concretely, the size of the transmission line employing with-contact was only 4.39 % of the conventional coplanar waveguide, According to the bandwidth extraction result, the bandwidth of the transmission lines employing various PSS structures were wider than 384 GHz. Above results indicate that the transmission lines employing various PSS can be effectively used for application to a broadband and miniature RF component, and especially, with-contact is most effective for a miniaturization of RF components.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.11 no.6
• /
• pp.772-777
• /
• 2018

This paper used RF Magnetron Sputtering to deposition n-type and p-type to ITO glass. The N-type ohmic contact worked well under all conditions. Sheet resistance has been shown to increase sheet resistance as RF Power increases. After analyzing the surface of the deposited thin film, in the condition that RF Power was 250W and substrate temperature was $250^{\circ}C$, particles were measured to have a uniform and consistent thin film. P-type has good ohmic contact under all conditions and sheet resistance has been shown to increase as RF Power increases. As the RF Power grew, thickness increased and stabilized. PN junction thin film and NP junction thin film showed increased thickness and stabilized as sputtering time increased. As a result of thin film, conversion efficiency was at 0.2 when sputtering time was 10 minutes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.292-292
• /
• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1509_1510
• /
• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.