• Journal of the Microelectronics and Packaging Society
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• v.4 no.2
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• pp.79-83
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• 1997

본 연구에서는 휴대용 전화기 및 무선 LAN 의 핵심부품인 RF-Switch Module의 초소형화 설계기술, 표면실장기술, 고주파설계기술, 소형화 SMD기술, Test 기술 및 RF-Switch Module 활용기술 등을 개발하였으며 RF-Switch Module의 설계기반 마련 및 대외 경쟁력 있는 RF-Switch Module의 초소형화 기술을 확보하였다.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.49-52
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• 1998

이동통신용 핵심 부품인 W-LAN용 RF-Switch를 설계 및 제작하였다. 본 연구에서 는 CAD를 이용한 전송선로 설계기술, 소형화, 다층화 설계기술, 이동통신용 MCM 부품의 패턴설계를 개발하였으며 RF-Switch 설계하는기법 소형화 및 다층화를 위한 MCM공법을 얻을수 있었다. Ant-Rx On시 삽입손실은 0.48dB로 나타났다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.416-423
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• 2012

Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.11
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• pp.55-60
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• 2008

This paper proposed a dual-band RF switch using a Composite Right/Left Handed transmission line(CRLH TL) and PIN diode. RF switch is usually consist of $\lambda/4$ Right Handed transmission line(RH TL) and PIN diode. The dual band characteristics of RF switch was achieved by using CRLH transmission line instead of RH transmission line. CRLH Open-Stub was designed for resolve to reduction of isolation due to Package Inductance of PIN diode. The proposed RF switch was designed at GSM and DCS frequency-band. The measurement results showed a good agreement with theoretical result.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.177-182
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• 2007

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.58-63
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• 2011

A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.710-713
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• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• Journal of Korea Multimedia Society
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• v.21 no.4
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• pp.493-498
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• 2018

In this paper, we provide the performance analyses of a dual-hop amplify-and-forward(AF) relay transmission composed of asymmetric radio-frequence(RF) and free-space optical(FSO) links. In the mixed RF/FSO system, a relay is equipped with two receive antennas for RF signals and one additional transmit antenna for FSO signals. In order to improve a performance of RF link, a switch-and-stay (SSC) diversity technique is applied at the relay which can provide a proper link performance with a low complexity. Specifically, we offer the performance analyses of the proposed system in terms of outage probability and secrecy outage probability. In numerical examples, we compare the system performances with no diversity and selection combining systems and verify our analytical results via computer-based Monte-Carlo simulations.