• Journal of Advanced Navigation Technology
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• v.21 no.1
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• pp.66-71
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• 2017

This paper describes implementation of a 165 MHz, 5 kW RF high power amplifier (HPA) for particle accelerator applications. The HPA consists of a drive amplifier for main amplifiers driving, sixteen 600 W class-AB push-pull power amplifier pallets and Wilkinson power divider/combiner using lumped LC components, which are divided/combined power amplifier pallet outputs. To detected the amplifier circuit of normal and reflected output power conditions, we used a bidirectional coupler. To radiate heat of main power amplifier, we were used an water-cooled copper plates to go through a water for radiation of heat. The HPA of center frequency 165 MHz has archived an efficiency of 62.5 % at 5 kW of power level experimentally.

• 한국정보통신설비학회:학술대회논문집
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• 2005.08a
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• pp.124-127
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• 2005

국내에서는 언제 어디서나 휴대용 단말을 이용하여 저렴한 요금으로 고속의 무선인터넷을 사용할 수 있는 휴대인터넷 서비스를 2006년부터 서비스 할 계획이다. 앞으로 서비스 될 WiBro 휴대인터넷 서비스 방식은 기존 이동통신 방식과 달리 RF 송신 주파수와 수신 주파수가 동일한 TDD (time division duplexing) 방식을 사용한다. WiBro 무선통신 기지국 장비에 있어서도 기존 CDMA 이동통신 기지국 장비에서와 마찬가지로 RF Power Amplifier (PA)가 매우 고가의 핵심 부품이라 할 수 있다. 물론, 기존 FDD (frequency division duplexing) 방식의 CDMA 기지국 PA와 달리 WiBro용 기지국 PA는 TDD 신호를 처리할 수 있는 새로운 기술을 필요로 한다. TDD 방식인 WiBro 기지국용으로 사용할 수 있는 새로운 2.3 GHz 42 W PA를 설계, 제작한 결과를 본 논문에서는 발표하고자 한다.

• Journal of IKEEE
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• v.26 no.3
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• pp.456-461
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• 2022

In this paper, a two-stage single-ended power amplifier (PA) with broadband gain characteristics was presented by utilizing a radio frequency (RF) transformer (TF), which is essential for a differential amplifier. The bandwidth of a PA can be improved by designing TF to have broadband characteristics and then applying it to the inter-stage matching network (IMN) of a PA. For broadband gain characteristics while maintaining the performance and area of the existing PA, an IMN was implemented on an monolithic microwave integrated circuit (MMIC) and a multi-layer printed circuit board (PCB), and the simulation results were compared. As a result of simulating the PA module designed using InGaP/GaAs HBT model, it has been confirmed that the PA employing the proposed design method has an improved fractional bandwidth of 19.8% at a center frequency of 3.3GHz, while the conventional PA showed that of 11.2%.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.129-132
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• 2000

In this paper, a 1.8㎓ low noise amplifier was designed and simulated using 0.2$\mu\textrm{m}$ Si CMOS process. Noise characteristics and s parameters were extracted for the 300$\mu\textrm{m}$ gate width and 0.25$\mu\textrm{m}$ gate length NMOS transistors. For high available power gain, each stage was designed cascode type. It revealed available power gain of 23.5dB, noise figure of 2.0dB, power consumption of 15㎽ at 2.5V. It was shown that designed low noise amplifier had good RF performance. Designed Si CMOS LNA is expected to be used for RF front-end in transceiver.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.277-283
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• 2016

In this paper, a system of self-interference signal cancelation for in-band full duplex has been implemented and tested in RF/analog region. The system performance has been evaluated with NI5791 platform and NI Flex RIO. Due to the low power level of the NI5791, the RF signal is amplified by SKYWORKS SE2565T power amplifier. A circulator is used to feed the antenna both the transmitter and receiver. The RF FIR filter is designed by twelve delay taps in two different groups, and the interval between each delay tap is designed to have 100 ps. The amplified signal is distributed to antenna and the FIR filter by use of a 10 dB directional coupler. The tap coefficients of the RF FIR filter are tuned to estimate the self-interference signal coming from antenna reflection and the leakage of the circulator, and the self-interference signal is subtracted. The system is test with 802.11a/g 20 MHz OFMD at 2.56 GHz, and the output power of the amplifier of 0 dBm. The self-interference signal is canceled out by 53 dB.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.27-30
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• 2003

Wireless power transmission system is one of the very interesting field not only in a technical and economical point of view but also that people are still trying to realize lossless power transmission. This paper has a purpose on the efficient power transmission at the passive type ICcard by using wireless power transmission system. The most difficult but important part of the passive type RF-ID system is building the system that supplies power from Reader-antenna to IDcard-antenna. To check what is the most efficient way to deliver power depending on what kind of specifications of the power-amp in reader, antenna and antenna in IDcard is for operating IDcard circuit efficiently receiving the power from reader-antenna. For this, we used 125kHz sinewave for RF signal as a basic specification, power-amp : OP-Amp for amplifying signal and AB Class push-pull power-amp for amplifying power, loop type antenna.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.853-862
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• 2019

In this paper, we designed a 4.5kW X-band SSPA transmitter to replace the TWTA search radar transmitter with low MTBF and high maintenance cost. The transmitter is designed for the performance of over 520W average transmission output and 4.0kW maximum transmission output. In particular, by implementing a graceful degradation, it is designed to maintain better performance than conventional TWTA transmitter up to 40% (13 assembly modules) failure level of 200W power amplifier assembly. Through an experiment on the effective range of X-band, the performance of proposed transmitter verified the values of the maximum transmission output 6.1kW, spurious output 69.16dBc, RF pulse rising time 15.2ns and RF pulse falling time 16.3ns. The experiment confirmed the change of output power according to the graceful degradation due to fault injection.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.1-6
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• 2008

In this paper, bias control circuit structure have been employed to improve the power added efficiency of the CMOS class-E power amplifier on low input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal. The proposed CMOS class-E power amplifier using bias controlled circuit has been improved the PAE on low output power level. The operating frequency is 2.14GHz and the output power is 22dBm to 25dBm. In addition to, it has been evident that the designed the structure has showed more than a 80% increase in PAE for flatness over all input power level, respectively.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.313-313
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• 2004

• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.568-574
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• 2024

The development of radiation-tolerant radio-frequency (RF) systems can be a solution for applications in extreme radiation environments, such as nuclear power plant monitoring and space exploration. Among the crucial components within an RF system, the low noise amplifier (LNA) stands out due to its vulnerability to TID effects, mainly relying on transistors as its main devices. In this study, the TID effects in the LNA using standard 0.18 ㎛ complementary metal oxide semiconductors (CMOS) technology are estimated and analyzed. The results show that the LNA can withstand absorbed radiation up to 100 kGy. The S₂₁, S₁₁, noise figure (NF), stability (K), and linearity of the third input intercept point (IIP3) slightly shifted from the initial values of 0.8312 dB, 0.793 dB, 0.00381 dB, 1.34406, and 2.36066 dBm, respectively which are still comparable to the typical performances. Moreover, the standard 0.18 ㎛ technology has demonstrated its radiation tolerance, as it exhibits negligible performance degradation in the conventional LNA even when exposed to radiation levels up to 100 kGy. In this context, simulation approach offers a means to predict the TID effects and estimate the radiation exposure limit for electronic devices, particularly when transistors are used as the primary RF components.