• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.139-143
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• 2005

In this paper, we propose the design on LNA and Down-mixer for MB-OFDM UWB using $0.18\;{\mu}m$ CMOS. LNA, Down-mixer design result shows that it covers the frequency range ken 3 GHz to 5 GHz. The LNA gain is larger than 12.8 dB, and noise figure about 2.6 dB. Double balanced differential down-mixer is designed less than 2 dB gainflatness, and it has over 30 dB LO leakage, feedthrough characteristics.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.38-42
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• 2015

In terms of food safety,mixture of contaminants in food is a serious problem for not only consumers but also manufacturers. In general, the target size of the metallic contaminant to be removed is 0.5 mm. However, it is a difficult task for manufacturers to achieve this target, because of lower system sensitivity. Therefore, we developed a food contaminant detection system based on high-Tc RF superconducting quantum interference devices (SQUIDs), which are highly sensitive magnetic sensors. This study aims to improve the signal to noise ratio (SNR) of the system and detect a 0.5 mm diameter steel ball. Using a real time digital signal processing technique along with analog band-pass filters, we improved the SNR of the system. Owing to the improved SNR, a steel ball with a diameter as small as 0.3 mm, with stand-off distance of 117 mm was successfully detected. These results suggest that the proposed system is a promising candidate for the detection of metallic contaminants in food products.

• Journal of Advanced Navigation Technology
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• v.21 no.3
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• pp.243-250
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• 2017

GPS(Global Positioning System) signal structure uses spread spectrum and the received power is relatively lower than the receiver noise figure. Therefore, it is vulnerable to the RF interferences and it could restrict on the safety navigation. The objective of this paper is to research on the spectral domain GPS interference rejection algorithm using proposed K-median filtering threshold setting method. In the performance test, the proposed algorithm has a relatively higher ISR(interference to signal ratio) compared with the conventional temporal domain technique in case of time variant interference signals.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37A no.10
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• pp.834-840
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• 2012

The use of ranging sensors on automobiles is becoming common with the desire of traffic safety by providing drivers the information of the relative distance between the vehicles. In this paper, the LED visible light ranging system different from the conventional ranging systems using the RF signal is investigated. For such a system, we propose a novel ranging algorithm which combines the time-of-flight (TOF) with the CDMA technology. Via the CDMA technology, the TOF ranging system can accurately distinguish the desired ranging signal from the visible light interferences of the neighbor vehicles. In addition, the proposed system can also overcome the light noise from other luminaries, i.e. sun-light, traffic-light, and so on. The simulation results show that the CDMA-based LED ranging system has a significant improvement for the ranging accuracy compared with the case without employing the CDMA.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.117-123
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• 2002

This paper describes the design for the resistive FET mixer with low If for the 4-Ch DBF(Digital Beam Forming) receiver This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(If) considered in this research are 2.09 GHz, 2.08 CHz and 10 MHz, respectively. This mixer is composed of band pass filter, a low pass filter and a DC bias circuit. Super low noise HJ FET of NE3210S01 is considered in design. The RE input power, LO input power and Vcs are used -10 dBm, 6 dBm and -0.4 V, respectively. In the 4-Ch resistive FET mixer, the measured If and harmonic components of 10 MHe, 20 MHz and 2.087 CHz are about -19.2 dBm, -66 dBm and -48 dBm, respectively The If output power observed at each channel of 10 MHz is about -19.2 dBm and it is higher 28.8 dBm than the maximum harmonic component of 2.087 CHz. Each If output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.55-58
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T=1.5V$, while the simulated value was 1.0GHz at $V_T=1.5V$. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.153-156
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T$=1.5V, while the simulated value was 1.0GHz at $V_T$=1.5V. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.4
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• pp.35-41
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• 2020

The small tracking radar is a very important component of the wire harness design because the components are organically connected. In addition, the cable connected to the signal processing unit and the servo unit having a large number of digital signals should be prepared to prevent the CPU of the signal processing unit from malfunctioning due to electromagnetic noise. Cables for signal transmission in the ◯◯ GHz band must reflect the design of temperature, vibration, and shock. To design a wire harness in a small space, the size of the connector must be minimized. The issues to be considered are described and the design plan is presented.