• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.817-820
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• 1999

In this paper, we describes RF receiver module for IMT-2000 handset with 5MHz channel bandwidth. The fabricated RF receiver module consists of Low Noise Amplifier-, RF SAW filter, Down-converter, IF SAW filter, AGC and PLL Synthesizer. The NF and IIP3 of LNA is 0.8㏈, 3㏈m at 2.14㎓, conversion gain of downconverter is l0㏈, dynamic range of AGC is 80㏈, and phase noise of PLL is -100 ㏈m, at 100KHz. The receiver sensitivity is -110㏈m, adjacent channel selectivity is -48㏈m.

• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.1-10
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• 2006

In this paper, a broadband RF module is designed and tested for 2.4GHz band applications. The RF module is composed of a low noise amplifier (LNA) with a three stage amplifier, a single ended gate mixer, matching circuits, a hairpin line band pass filter and a Chebyshev low pass filter to convert the radio frequency (RF) into the intermediate frequency (IF). The LNA has a high gain and stability, and the single ended gate mixer has a high conversion gain and wide dynamic range. In the analysis of the broadband RF module, the composite harmonic balance technique is used to analyze the operating characteristics of an RF module circuit. The RF module has a 55.2dB conversion gain with a 1.54dB low noise figure, $-120{\sim}-60dBm$ wide RF power dynamic range, -60dBm low harmonic spectrum and a good isolation factor among the RF, IF, and local oscillator (LO) ports.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.282-288
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• 2014

In this paper, we have analyzed and designed a digital RF receiver based on the optimization of the dynamic range parameter to secure the wideband characteristics and linearity of digital radar receivers. To improve the wideband characteristics and dynamic range, a low noise amplifier is matching design with a noise source to minimize the noise figure in 1 GHz bandwidth and we improved the linearity of RF-receiver by securing the conversion gain characteristics of receiver through the design of active mixer. RF receiver is designed to give gain 63 dB, noise figure 1.2 dB and dynamic range of RF receiver has 75.8 dB in a wide band of 8.8~9.8 GHz. It is shown to be applicable to X-band digital radar receiver.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.4
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• pp.292-299
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• 2012

The line-of-sight(LOS) rate is estimated using Kalman filter in Radio-Frequency(RF) seeker. For the two axis gimbaled seeker, proper system modeling is considered and the basic filter structure is set up. The main issue for Kalman filter is choosing the proper process and measurement noise. For the measurement process, the signal to noise ratio(SNR) and other components are introduced. To cope with the eclipse problem or other abnormal seeker status, the pseudo input signal concept is proposed. By conditioning abnormal signals, the LOS rate estimation performance is increased. The process noise is also an important factor in the propagation phase. The analytical approach on a process noise component is performed and a reliable region for the filter is calculated based on the eigenvalue analysis. Some numerical simulations are performed to check the validity of suggested algorithm.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.242-246
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• 2012

This paper presents an integrated low noise and highly linear wideband RF front-end for a digital terrestrial and cable TV tuner, which are used as a part of double-conversion TV tuner. The low noise amplifier (LNA) has a low noise figure and high linearity by adopting a noise canceling technique based on current amplification. The up-conversion mixer and SAW buffer have high linearity by employing a third order intermodulation cancellation technique. The proposed RF front-end is designed in a $0.18{\mu}m$ CMOS and draws 60 mA from a 1.8 V supply voltage. The RF front-end shows a voltage gain of 30 dB, an average single side-band noise figure of 4.2 dB, an IIP2 of 40 dBm, and an IIP3 of -4.5 dBm for the entire band from 48 MHz to 862Hz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.748-753
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• 2002

In this paper, a new topology of a active capacitor is proposed in order to apply the resonator in the design of RF active bandpass filters. Through the noise analysis of the active capacitor, the optimized low noise design process is also presented, Due to the low noise performance of the proposed active bandpass filter, it can be used in the RF front-end of the receivers. In designed 2-stage active bandpass filter at 1.9 GHz shows insertion loss of 0 dB, noise figure of 2.6 dB, and OIP3 of 8 dBm.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.1-6
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• 2014

Superconducting quantum interference device (SQUID) is a sensitive detector of magnetic flux signals. Up to now, the main application of SQUIDs has been measurements of magnetic flux signals in the frequency range from near DC to several MHz. Recently, cryogenic low-noise radio-frequency (RF) amplifiers based on DC SQUID are under development aiming to detect RF signals with sensitivity approaching quantum limit. In this paper, we review the recent progress of cryogenic low-noise RF amplifiers based on SQUID technology.

• International journal of advanced smart convergence
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• v.10 no.3
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• pp.81-88
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• 2021

This paper proposes two types of subharmonic RF receiver front-end (called LMV) where, in a single stage, quadrature voltage-controlled oscillator (QVCO) is stacked on top of a low noise amplifier. Since the QVCO itself plays the role of the single-balanced subharmonic mixer with the dc current reuse technique by stacking, the proposed topology can remove the RF mixer component in the RF front-end and thus reduce the chip size and the power consumption. Another advantage of the proposed topologies is that many challenges of the direct conversion receiver can be easily evaded with the subharmonic mixing in the QVCO itself. The intermediate frequency signal can be directly extracted at the center taps of the two inductors of the QVCO. Using a 65 nm complementary metal oxide semiconductor (CMOS) technology, the proposed subharmonic RF front-ends are designed. Oscillating at around 2.4 GHz band, the proposed subharmonic LMVs are compared in terms of phase noise, voltage conversion gain and double sideband noise figure. The subharmonic LMVs consume about 330 ㎼ dc power from a 1-V supply.

• Carbon letters
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• v.13 no.1
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• pp.17-22
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• 2012

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.902-905
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• 2006

This paper presents a new RF testing scheme based on a design-for-testability (DFT) method for measuring functional specifications of RF integrated circuits (IC). The proposed method provides input impedance. gain, noise figure. input voltage standing wave ratio (VSWR) and output signal-to-noise ratio (SNR) of a low noise amplifier (LNA). The RF test scheme is based on theoretical expressions that produce the actual RF device specifications by output DC voltages from the DR chip.