• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• Journal of information and communication convergence engineering
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• 제11권1호
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• pp.56-61
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• 2013

Modern integrated circuits (ICs) are becoming an integrated parts of analog, digital, and radio frequency (RF) circuits. Testing these RF circuits on a chip is an important task, not only for fabrication quality control but also for tuning RF circuit elements to fit multi-standard wireless systems. In this paper, RF test circuits suitable for embedded testing are introduced: RF power detectors, power control circuits, directional couplers, and six-port reflectometers. Various types of embedded RF power detectors are reviewed. The conventional approach and our approach for the RF power control circuits are compared. Also, embedded tunable active directional couplers are presented. Then, six-port reflectometers for embedded RF testing are introduced including a 77-GHz six-port reflectometer circuit in a 130 nm process. This circuit demonstrates successful calibrated reflection coefficient simulation results for 37 well distributed samples in a Smith chart. The details including the theory, calibration, circuit design techniques, and simulations of the 77-GHz six-port reflectometer are presented in this paper.

• Journal of Advanced Marine Engineering and Technology
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• 제37권1호
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• pp.99-104
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• 2013

본 논문에서는 밀리미터파에의 응용을 위하여, 소형화된 다운컨버터 MMIC(monolithic microwave integrated circuit)를 제안하였다. 구체적으로는, RF(radio frequency) 및 LO(local oscilator) 신호의 격리특성을 위해 Lange 커플러가 삽입되었고, ${\lambda}$/4 전송선로를 연결하여 역위상 RF와 동위상 LO 신호가 믹서부분 FET(field effect transistor)의 게이트에 인가되었다. 또한, IF(intermediate frequency) 출력 신호의 역위상의 결합과 LO 누설신호 제거를 위하여 역위상 결합용 능동 벌룬이 출력 포트에 설치되었다. 측정 결과에 따르면, 제안된 다운컨버터 MMIC는 양호한 RF 특성을 보였다. 구체적으로, 63 GHz의 RF 주파수와 60.6 GHz의 LO 주파수에서 IF 출력 포트에서의 LO 누설 전력이 .25 dBc, RF와 LO의 격리특성은 18 dB를 보였으며, 변환 이득이 10.3 dB를 보였다. 따라서, SAW 필터와 같은 LO 제거용 off-chip 소자는 제안된 다운컨버터 MMIC에서는 필요하지 않게 되었다. 모든 능동소자와 수동소자가 GaAs MMIC 내부에 집적되었으며, 전체 사이즈는 $2.2{\times}1.4mm^2$ 로써 초소형 MMIC가 구현되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.710-713
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• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• 전자통신동향분석
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• 제36권3호
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• 항공우주기술
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• 제7권1호
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• pp.121-128
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• 2008

이동 통신 및 위성 통신 분야에 있어서 무선 통신 기술 분야는 무선 환경에서 신호를 보내고 받는 기능을 수행하는 중요한 분야이다. 이러한 무선 통신 분야에서 송수신한을 구성하는 송수신 부품은 RF 시스템의 성능을 좌우한다. 따라서 위성 통신 분야에 있어서 신뢰성을 획득하기 위해서는 고집적화와 소형화를 통한 경쟁력 확보가 필수적인데 이를 위한 기술이 MMIC 이다. MMIC란 RF 부품을 설계하고 제작하는 기술로서 본 논문은 MMIC 기술에 대한 소개와 위성 분야에서의 기술적인 동향과 전망을 기술하고 있다.

• Journal of Electrical Engineering and Technology
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• 제6권3호
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• pp.408-413
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• 2011

In this paper, a real-coefficient approach to Adaptive Frequency Sampling (AFS) technique is developed for efficient equivalent circuit modeling of RF components. This proposed method is advantageous than the vector fitting technique and the conventional AFS method in terms of fewer samples leading to a lower order of a rational function on a given data and to a direct conversion to an equivalent circuit for PSPICE(Personal Simulation Program with Integrated Circuit Emphsis) simulation, respectively. To validate the proposed method, the distributed equivalent circuit of a presented multi-layered RF low-pass filter is obtained using the proposed real-coefficient AFS, and then comparisons with EM simulation and circuit simulation for the device under consideration are achieved.

• ETRI Journal
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• 제29권3호
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• pp.371-380
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• 2007

This paper proposes a new automatic compensation network (ACN) for a system-on-chip (SoC) transceiver. We built a 5 GHz low noise amplifier (LNA) with an on-chip ACN using 0.18 ${\mu}m$ SiGe technology. This network is extremely useful for today's radio frequency (RF) integrated circuit devices in a complete RF transceiver environment. The network comprises an RF design-for-testability (DFT) circuit, capacitor mirror banks, and a digital signal processor. The RF DFT circuit consists of a test amplifier and RF peak detectors. The RF DFT circuit helps the network to provide DC output voltages, which makes the compensation network automatic. The proposed technique utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance, gain, and noise figure using the developed mathematical equations. The ACN automatically adjusts the performance of the 5 GHz LNA with the processor in the SoC transceiver when the LNA goes out of the normal range of operation. The ACN compensates abnormal operation due to unusual thermal variation or unusual process variation. The ACN is simple, inexpensive and suitable for a complete RF transceiver environment.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.198-206
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• 2011

This paper presents a new programmable compensation circuit (PCC) for a System-on-Chip (SoC). The PCC is integrated with $0.18-{\mu}m$ BiCMOS SiGe technology. It consists of RF Design-for-Testability (DFT) circuit, Resistor Array Bank (RAB) and digital signal processor (DSP). To verify performance of the PCC we built a 5-GHz low noise amplifier (LNA) with an on-chip RAB using the same technology. Proposed circuit helps it to provide DC output voltages, hence, making the RF system chain automatic. It automatically adjusts performance of an LNA with the processor in the SoC when it goes out of the normal range of operation. The PCC also compensates abnormal operation due to the unusual PVT (Process, Voltage and Thermal) variations in RF circuits.