• Title/Summary/Keyword: RF Heating

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Influence of Au Interlayer Thickness on the Opto-Electrical Properties of ZnO Thin Films (Au 층간박막 두께에 따른 ZnO 박막의 전기광학적 특성 변화)

  • Park, Yun-Je;Choe, Su-Hyeon;Kim, Yu-Sung;Cha, Byung-Chul;Gong, Young-Min;Kim, Daeil
    • Journal of the Korean institute of surface engineering
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    • v.53 no.3
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    • pp.104-108
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    • 2020
  • ZnO single layer films (100 nm thick) and Au intermediated ZnO films (ZnO/Au/ZnO; ZAZ) were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the influence of the Au interlayer on the electrical and optical properties of the films were investigated. ZnO thin films show the visible transmittance of 90.3 % and sheet resistance of 63.2×108 Ω/□. In ZAZ films, as Au interlayer thickness increased from 6 to 10 nm, the sheet resistance decreased from 58.3×108 to 48.6 Ω/□, and the visible transmittance decreased from 84.2 to 73.9 %. From the observed results, it can be concluded that the intermediate Au thin film enhances the opto-electrical performance of ZnO films without intentional substrate heating.

The Role of (111)MgO Underlayer in Growth of c-axis Oriented Barium Ferrite Films

  • Erickson, D.W.;Hong, Y.K.;Gee, S.H.;Tanaka, T.;Park, M.H.;Nam, I.T.
    • Journal of Magnetics
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    • v.9 no.4
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    • pp.116-120
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    • 2004
  • Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

Thermal Memory Effect Modeling and Compensation in Doherty Amplifier (Doherty 증폭기의 열 메모리 효과 모델링과 보상)

  • Lee Suk-Hui;Lee Sang-Ho;Bang Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.9 s.339
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    • pp.49-56
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    • 2005
  • Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.

Effects of Climate Change on Purple Laver Farming in Maro-hae (Jindo-gun and Haenam-gun), Republic of Korea and Countermeasures (기후변화가 마로해의 김 양식에 미치는 영향 및 대응방안)

  • Kim, Tae-Hyung;Shin, Jong-Ahm;Choi, Sang-Duk
    • The Journal of Fisheries Business Administration
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    • v.52 no.2
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    • pp.55-67
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    • 2021
  • Global warming affects critical natural resources, one of which is the oceans that occupy 70% of the total cover of the earth. In other words, ocean warming is a subset of global warming which needs to be addressed urgently. Purple laver (pyropia spp.) is one of the most vulnerable items to climate change although it is a major export product of Korean fisheries. The purpose of this study is to analyze the causality of how climate change caused by global warming affects the increase or decrease of PLP (purple laver production). The target area for analysis was set to Maro-hae between Jindo-gun and Haenam-gun. We selected marine environmental factors and meteorologic factors that could affect PLP as variables, as well as co-integration tests to determine long-term balance, and the Granger causticity tests. As a result, PLP and marine environmental factors WT (water temperature), pH, and DO confirmed that long-term equilibrium relationships were established, respectively. However, there is only causality with WT and it is confirmed that there is only a correlation between pH and DO (dissolved oxygen). There was no long-term equilibrium relationship between PLP and HDD (heating degree days) and there is a causal effect that HDD affects PLP; however, it was less clear than that of WT. The relationship between PLP and RF (rainfall), WS (wind speed), SS (percentage of sunshine), and FF (farm facilities) was all balanced in the long term, and causality exists. Based on the results of the analysis, policy proposals were made.

Influence of Ag Interlayer on the Optical and Electrical Properties of SnO2 Thin Films (Ag 중간층이 SnO2 박막의 광학적, 전기적 특성에 미치는 영향)

  • Jang, Jin-Kyu;Kim, Hyun-Jin;Choi, Jae-Wook;Lee, Yeon-Hak;Heo, Sung-Bo;Kim, Yu-Sung;Kong, Young-Min;Kim, Daeil
    • Journal of the Korean institute of surface engineering
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    • v.54 no.3
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    • pp.119-123
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    • 2021
  • SnO2 single layer and SnO2/Ag/SnO2 (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO2 films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×104 Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO2 films enhances the opto-electrical performance without substrate heating or annealing process.

Therapeutic Effect of Combined Radiotherapy and Hyperthermia in Primary Hepatocellular Carcinoma (원발성 간암의 방사선치료및 온열요법의 병용치료 효과)

  • Kang Ki Mun;Choi Ihl Bohng;Kay Chul Seung;Choi Byung Ok;Chung Su Mi;Kim In Ah;Han Sung Tae;Sun Hee Sik;Chung Kyu Won;Shinn Keyong Sub
    • Radiation Oncology Journal
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    • v.12 no.2
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    • pp.191-199
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    • 1994
  • Purpose : This study was undertaken to show the clinical results of combined radiotherapy and hyperthermia in primary hepatoma Materials and Methods : Between December 1989 and March 1993, 50 patients with hepatomas were treated by combined radiotherapy and hyperthermia. Among them, we analyzed retrospectively 33 patients who received the complete course of treatment. The ages of the patients ranged from 36 to 75(mean age: 55.5 years). Twenty-six patients ($78.8\%$) were men, and 7 ($21.2\%$ were women. According to Child's classification, nine patients ($27.3{\%}$) were A group, 9 ($27.3\%$) were B group, 15 ($45.4\%$) were C group. Radiation therapy was done by a 6 MV and 15 MV linear accelerator. Patients were treated with daily fractions of 150-180 cCy to doses of 2550 cGy -4950 cGy (median : 3000 cGy). Local hyperthermia was done by 8 MHZ RF capacitive heating device (Cancermia. Green Cross Co., Korea), 50-60 min/session, 1-2 sessions/wk, and 8.5 sessions (median number)/patient. We analyzed the prognostic factors including age, sex, tumor type, Child's classification, $\alpha$-fetoprotein, liver cirrhosis, ascites, portal vein invasion, esophageal varix, number of hyperthermia, chemotherapy, total bilirubin level, Karnofsky perfomance status. Results : The overall 1-year survival was $24.2\%$, with a mean survival of 10months. Of 33 patients, tumor regression (PR+MR) was seen in $30.4\%$, no response was seen in $52.2\%,\;17.4\%$ patient was progressed. In patients who had tumor regression, the overall 1-year survival was $42.1\%$ with a mean survival of 14 months. Factors influencing the survival were sex (p=0.05), tumor type (p=0.0248), Child's classification (p=0.0001), liver cirrhosis (p=0.0108), ascites (p=0.0009), and Karnofsky perfomance status (p=0.0028). Complications developed in 28 patients, including 18 hot pain,5 fat necrosis, 3 transient fever, 2 nausea and vomiting. Conclusion : In this study, the results suggests that combined radiotherauy and hyperthermia may improve the survival rate of hepatoma.

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New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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Enhanced Device Performance of IZO-based oxide-TFTs with Co-sputtered $HfO_2-Al_2O_3$ Gate Dielectrics (Co-sputtered $HfO_2-Al_2O_3$을 게이트 절연막으로 적용한 IZO 기반 Oxide-TFT 소자의 성능 향상)

  • Son, Hee-Geon;Yang, Jung-Il;Cho, Dong-Kyu;Woo, Sang-Hyun;Lee, Dong-Hee;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.6
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    • pp.1-6
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    • 2011
  • A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

Combined Radiotherapy and Hyperthermia for Nonresectable Hepatocellular Carcinoma (절제 불가능한 원발성 간암의 온열 및 방사선 병용 요법)

  • Seong Jin Sil;Juhn Juhn Kyu;Suh Chang Ok;Kim Gwi Eon;Han Kwang Hyub;Lee Sang In;Roh Jae Kyung;Choi Heung Jai;Kim Byung Soo
    • Radiation Oncology Journal
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    • v.7 no.2
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    • pp.247-257
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    • 1989
  • Thirty patients with nonresectable hepatocellular carcinoma (HCC) due to either locally advanced lesion or association with liver cirrhosis, treated with combined radiotherapy and hyperthermia between April 1988 and July 1988, at Dept. of Radiation Oncology, Yonsei university College of medicine, were analysed. External radiotherapy of a total dose of 3060cGy/3.5 wks was given. Hyperthermia was given twice a week with a total of 6 treatment sessions using 8MHz radiofrequency capacitive type heating device, i.e., Thermotron RF-8 and Cancermia. In all cases hyperthermia was given within 30 minutes after radiotherapy for 30~60min. Temperature was measured by inserting thermocouple into the tumor mass under the ultrasonographic guidance only for those who had not bleeding tendency. As a result, partial response (PR) was achieved in 12 patients (40%), and symptomatic improvement was observed in 22 patients (78.6%) among 28 patients who had suffered from abdominal pain. The most significant factor affecting the tumor response rate was the type of tumor (single massive: 10/14, 71.4%; diffuse infiltrative: 2/10, 20%; multinodular:0/6, 0%; p<0.005). There were not any significant side effects relating to combined treatment. The overall 1 year survival rate was 34%, with 50% in the PR group and 22% in the no response group (NR), respectively. Median survival was 6.5 months and longer for those of PR than of NR (11 mos. vs 5, p<0.05). In conclusion, combined radiotherapy and hyperthermia appeared to be effective in local control and symptomatic palliation of HCC. Further study including a larger number of the patients to confirm its effect in survival and detrimental side effect should be urged.

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Study on data preprocessing methods for considering snow accumulation and snow melt in dam inflow prediction using machine learning & deep learning models (머신러닝&딥러닝 모델을 활용한 댐 일유입량 예측시 융적설을 고려하기 위한 데이터 전처리에 대한 방법 연구)

  • Jo, Youngsik;Jung, Kwansue
    • Journal of Korea Water Resources Association
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    • v.57 no.1
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    • pp.35-44
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    • 2024
  • Research in dam inflow prediction has actively explored the utilization of data-driven machine learning and deep learning (ML&DL) tools across diverse domains. Enhancing not just the inherent model performance but also accounting for model characteristics and preprocessing data are crucial elements for precise dam inflow prediction. Particularly, existing rainfall data, derived from snowfall amounts through heating facilities, introduces distortions in the correlation between snow accumulation and rainfall, especially in dam basins influenced by snow accumulation, such as Soyang Dam. This study focuses on the preprocessing of rainfall data essential for the application of ML&DL models in predicting dam inflow in basins affected by snow accumulation. This is vital to address phenomena like reduced outflow during winter due to low snowfall and increased outflow during spring despite minimal or no rain, both of which are physical occurrences. Three machine learning models (SVM, RF, LGBM) and two deep learning models (LSTM, TCN) were built by combining rainfall and inflow series. With optimal hyperparameter tuning, the appropriate model was selected, resulting in a high level of predictive performance with NSE ranging from 0.842 to 0.894. Moreover, to generate rainfall correction data considering snow accumulation, a simulated snow accumulation algorithm was developed. Applying this correction to machine learning and deep learning models yielded NSE values ranging from 0.841 to 0.896, indicating a similarly high level of predictive performance compared to the pre-snow accumulation application. Notably, during the snow accumulation period, adjusting rainfall during the training phase was observed to lead to a more accurate simulation of observed inflow when predicted. This underscores the importance of thoughtful data preprocessing, taking into account physical factors such as snowfall and snowmelt, in constructing data models.