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http://dx.doi.org/10.5695/JKISE.2020.53.3.104

Influence of Au Interlayer Thickness on the Opto-Electrical Properties of ZnO Thin Films  

Park, Yun-Je (School of Materials Science and Engineering, University of Ulsan)
Choe, Su-Hyeon (School of Materials Science and Engineering, University of Ulsan)
Kim, Yu-Sung (Advanced Forming Processes R&D Group, Korea Institute of Industrial Technology)
Cha, Byung-Chul (Advanced Forming Processes R&D Group, Korea Institute of Industrial Technology)
Gong, Young-Min (School of Materials Science and Engineering, University of Ulsan)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean institute of surface engineering / v.53, no.3, 2020 , pp. 104-108 More about this Journal
Abstract
ZnO single layer films (100 nm thick) and Au intermediated ZnO films (ZnO/Au/ZnO; ZAZ) were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the influence of the Au interlayer on the electrical and optical properties of the films were investigated. ZnO thin films show the visible transmittance of 90.3 % and sheet resistance of 63.2×108 Ω/□. In ZAZ films, as Au interlayer thickness increased from 6 to 10 nm, the sheet resistance decreased from 58.3×108 to 48.6 Ω/□, and the visible transmittance decreased from 84.2 to 73.9 %. From the observed results, it can be concluded that the intermediate Au thin film enhances the opto-electrical performance of ZnO films without intentional substrate heating.
Keywords
ZnO; Au; Sheet resistance; Visible transmittance; Optical band gap;
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Times Cited By KSCI : 2  (Citation Analysis)
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