• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.75-87
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• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

• Korean Journal of Medicinal Crop Science
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• v.16 no.4
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• pp.211-217
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• 2008

To find up using of more efficient white ginseng, white ginseng was dried on various temperature (70, 80, 90,100, 110, 120, 130 and $140^{\circ}C$) with far-infrared drier and analyzed the composition of ginsenoside, carbohydrate, organic acid content and color. The type of ginseng shape was sliced and dried main and fine root, separately. As heating temperature increased, total ginsenoside content increased on main root, its content was the highest at $130^{\circ}C$, while decreased on fine root. Soluble carbohydrate content was the highest at $70^{\circ}C$ both on main and fine root. Increase of Re, Rc and Rb2 content was increased more high at $130^{\circ}C$, especially. But on fine root, content of Rg1, Rg3, Rf and Rb3 was increased and Re, Rc,Rb1 and Rb2 were decreased by the increased of temperature. As heating temperature increased, lightness of both main and fine root were decreased. Redness and yellowness of both main and fine root was increased to $120^{\circ}C$ and $100^{\circ}C$, respectively and decreased over this temperature.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1584-1588
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• 2018

During hyperthermia therapy, cancer cells are heated to a temperature in the range of $40{\sim}45^{\circ}C$ for a defined time period to damage these cells while keeping healthy tissues at safe temperatures. Prior to hyperthermia therapy, the amount of heat energy transferred to the cancer cells must be predicted. Among various non-invasive methods, the thermal prediction method using the specific absorption rate (SAR) is the most widely used method. The existing methods predict the thermal distribution by using a single constant for the mass density in one organ through assignment. However, because the SAR and the bio heat equation (BHE) vary with the mass density, the mass density of each organ must be accurately considered. In this study, the mass density distribution was calculated using the relationship between the Hounsfield unit and the mass density of tissues in preceding research. The SAR distribution was found using a quasi-static approximation to Maxwell's equation and was used to calculate the potential distribution and the energy distributions for capacitive RF heating. The thermal distribution during exposure to RF waves was determined by solving the BHE with consideration given to the considering contributions of heat conduction and external heating. Compared with reference data for the mass density, our results was within 1%. When the reconstructed temperature distribution was compared to the measured temperature distribution, the difference was within 3%. In this study, the density distribution and the thermal distribution were reconstructed for the agar phantom. Based on these data, we developed an algorithm that could be applied to patients.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.585-589
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• 1999

In order to grow $Bi_4Ge_3O_{12}$ crystals by the Czochralski method equipped with the auto-diameter control system, we used the resistance heater of our own design. We measure the temperature gradients under-arious thermal configurations. The relation between the critical rotation rate corresponding to the flat interface and the temperature gadient was investigated, and the importance of the axial temperature gradient was pointed out. The results from this work were compared with those obtained by other authors when RF heating was used. The optimal conditions for the crystal growth were determined as follows; under $O_2$ atmosphere with the pulling rate fixed at 2 mm/hr, rotation rate changed from 30 to 23 rpm as the crystal growth proceeded, radial and axial temperature gradients were 50 and $40^{\circ}C$/cm near melts respectively, and the composition was chemically stoichiometric.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.426-434
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• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.207-219
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• 2022

The suppression of high-intensity blob structures in the scrape-off layer (SOL) by ion-cyclotron range of frequencies (ICRF) power, leading to a decrease in the turbulent fluctuation level, is observed first in the Experimental Advanced Superconducting Tokamak (EAST) experiment. This suppression effect from ICRF power injection is global in the whole SOL at EAST, i.e. blob structures both in the regions that are magnetically connected to the active ICRF launcher and in the regions that are not connected to the active ICRF launcher could be suppressed by ICRF power. However, more ICRF power is required to reach the full blob structure suppression effect in the regions that are magnetically unconnected to the active launcher than in the regions that are magnetically connected to the active launcher. Studies show that a possible reason for the blob suppression could be the enhanced E_r × B shear flow in the SOL, which is supported by the shaper radial gradient in the floating potential profiles sensed by the divertor probe arrays with increasing ICRF power. The local RF wave power unabsorbed by the core plasma is responsible for the modification of potential profiles in the SOL regions.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.